MMDF2C01HD
Preferred Device
Power MOSFET
2 Amps, 12 Volts
Complementary SO−8, Dual
These miniature surface mount MOSFETs feature ultra low R
DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives.
•
Ultra Low R
DS(on)
Provides Higher Efficiency and Extends
Battery Life
•
Logic Level Gate Drive − Can Be Driven by Logic ICs
•
Miniature SO−8 Surface Mount Package − Saves Board Space
•
Diode Is Characterized for Use In Bridge Circuits
•
Diode Exhibits High Speed, With Soft Recovery
•
I
DSS
Specified at Elevated Temperature
•
Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted) (Note 1.)
Rating
Drain−to−Source Voltage
N−Channel
P−Channel
Gate−to−Source Voltage
Drain Current − Continuous
− Pulsed
N−Channel
P−Channel
N−Channel
P−Channel
Symbol
V
DSS
20
12
V
GS
I
D
I
DM
T
J
and
T
stg
P
D
R
θJA
T
L
±
8.0
5.2
3.4
48
17
−55 to
150
2.0
62.5
260
Vdc
A
Value
Unit
Vdc
8
1
D2C01
L
Y
WW
= Device Code
= Location Code
= Year
= Work Week
SO−8, Dual
CASE 751
STYLE 14
D2C01
LYWW
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2 AMPERES
12 VOLTS
R
DS(on)
= 45 mW (N−Channel)
R
DS(on)
= 180 mW (P−Channel)
N−Channel
D
P−Channel
D
G
S
G
S
MARKING
DIAGRAM
Operating and Storage Temperature Range
Total Power Dissipation @ T
A
= 25°C
(Note 2.)
Thermal Resistance − Junction to Ambient
(Note 2.)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds.
°C
PIN ASSIGNMENT
Watts
N−Source
°C/W
°C
N−Gate
P−Source
P−Gate
1
2
3
4
8
7
6
5
N−Drain
N−Drain
P−Drain
P−Drain
Top View
1. Negative signs for P−Channel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
ORDERING INFORMATION
Device
MMDF2C01HDR2
Package
SO−8
Shipping
2500 Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2000
1
September, 2004 − Rev. XXX
Publication Order Number:
MMDF2C01HD/D
MMDF2C01HD
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Note 3.)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
µAdc)
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 20 Vdc)
(V
GS
= 0 Vdc, V
DS
= 12 Vdc)
Gate−Body Leakage Current
(V
GS
=
±
8.0 Vdc, V
DS
= 0)
ON CHARACTERISTICS
(Note 4.)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
µAdc)
Drain−to−Source On−Resistance
(V
GS
= 4.5 Vdc, I
D
= 4.0 Adc)
(V
GS
= 4.5 Vdc, I
D
= 2.0 Adc)
Drain−to−Source On−Resistance
(V
GS
= 2.7 Vdc, I
D
= 2.0 Adc)
(V
GS
= 2.7 Vdc, I
D
= 1.0 Adc)
Forward Transconductance
(V
DS
= 2.5 Adc, I
D
= 2.0 Adc)
(V
DS
= 2.5 Adc, I
D
= 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 5.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(V
DS
= 6.0 Vdc, I
D
= 4.0 Adc,
V
GS
= 4.5 Vdc,
R
G
= 2.3
Ω)
(V
DS
= 6.0 Vdc, I
D
= 2.0 Adc,
V
GS
= 4.5 Vdc,
R
G
= 6.0
Ω)
(V
DD
= 6.0 Vdc, I
D
= 4.0 Adc,
V
GS
= 2.7 Vdc,
R
G
= 2.3
Ω)
(V
DD
= 6.0 Vdc, I
D
= 2.0 Adc,
V
GS
= 2.7 Vdc,
R
G
= 6.0
Ω)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
13
21
60
156
20
38
29
68
10
16
42
44
24
68
28
54
26
45
120
315
40
75
58
135
20
35
84
90
48
135
56
110
ns
(V
DS
= 10 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
)
C
iss
C
oss
C
rss
(N)
(P)
(N)
(P)
(N)
(P)
−
−
−
−
−
−
425
530
270
410
115
177
595
740
378
570
230
250
pF
V
GS(th)
R
DS(on)
(N)
(P)
R
DS(on)
(N)
(P)
g
FS
(N)
(P)
3.0
3.0
6.0
4.75
−
−
−
−
0.043
0.2
0.055
0.22
mhos
−
−
0.035
0.16
0.045
0.18
Ohm
(N)
(P)
0.7
0.7
0.8
1.0
1.1
1.1
Vdc
Ohm
V
(BR)DSS
I
DSS
(N)
(P)
I
GSS
−
−
−
100
−
−
−
−
1.0
1.0
nAdc
(N)
(P)
20
12
−
−
−
−
Vdc
µAdc
Symbol
Polarity
Min
Typ
Max
Unit
3. Negative signs for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperature.
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2
MMDF2C01HD
ELECTRICAL CHARACTERISTICS − continued
(T
A
= 25°C unless otherwise noted) (Note 6.)
Characteristic
SWITCHING CHARACTERISTICS
− continued
(Note 8.)
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(V
DS
= 10 Vdc, I
D
= 4.0 Adc,
V
GS
= 4.5 Vdc)
(V
DS
= 6.0 Vdc, I
D
= 2.0 Adc,
V
GS
= 4.5 Vdc)
Q
T
Q
1
Q
2
Q
3
SOURCE−DRAIN DIODE CHARACTERISTICS
(T
C
= 25°C)
Forward Voltage (Note 7.)
Reverse Recovery Time
(I
S
= 4.0 Adc, V
GS
= 0 Vdc)
(I
S
= 2.0 Adc, V
GS
= 0 Vdc)
V
SD
t
rr
t
a
(I
F
= I
S
,
dI
S
/dt = 100 A/µs)
Reverse Recovery Stored
Charge
t
b
Q
RR
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
−
−
−
−
−
−
−
−
−
−
0.95
1.69
38
48
17
23
22
25
0.028
0.05
1.1
2.0
−
−
−
−
−
−
−
−
µC
Vdc
ns
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
−
−
−
−
−
−
−
−
9.2
9.3
1.3
0.8
3.5
4.0
3.0
3.0
13
13
−
−
−
−
−
−
nC
Symbol
Polarity
Min
Typ
Max
Unit
6. Negative signs for P−Channel device omitted for clarity.
7. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
8. Switching characteristics are independent of operating junction temperature.
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3
MMDF2C01HD
TYPICAL ELECTRICAL CHARACTERISTICS
N−Channel
8
I D , DRAIN CURRENT (AMPS)
4.5 V
3.1 V
6 2.7 V
2.3 V
2.5 V
V
GS
= 8 V
2.1 V
4
T
J
= 25°C
I D , DRAIN CURRENT (AMPS)
3
V
GS
= 8 V
4.5 V
3.1 V
2.7 V
2.1 V
2
1.9 V
1
1.7 V
1.5 V
1.6
1.8
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.5 V
2.3 V
T
J
= 25°C
P−Channel
4
1.9 V
1.7 V
2
1.5 V
1.3 V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 1. On−Region Characteristics
8
I D , DRAIN CURRENT (AMPS)
V
DS
≥
10 V
I D , DRAIN CURRENT (AMPS)
4
V
DS
≥
10 V
6
3
4
100°C
25°C
2
100°C
1
2
T
J
= −55°C
25°C
T
J
= −55°C
0
1
1.2
1.4
1.6
1.8
2
2.2
0
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Figure 2. Transfer Characteristics
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4
MMDF2C01HD
TYPICAL ELECTRICAL CHARACTERISTICS
N−Channel
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
0.07
T
J
= 25°C
I
D
= 2 A
0.06
0.35
T
J
= 25°C
I
D
= 1 A
P−Channel
0.30
0.25
0.05
0.20
0.04
0.15
0.03
0
2
4
6
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
8
0.1
0
2
4
6
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
8
Figure 3. On−Resistance versus
Gate−To−Source Voltage
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
0.050
T
J
= 25°C
0.045
V
GS
= 2.7 V
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
0.30
Figure 3. On−Resistance versus
Gate−To−Source Voltage
T
J
= 25°C
0.25
0.040
0.20
V
GS
= 2.7 V
0.035
4.5 V
4.5 V
0.15
0.030
0
2
6
4
I
D
, DRAIN CURRENT (AMPS)
8
0.10
0
0.8
1.6
2.4
I
D
, DRAIN CURRENT (AMPS)
3.2
4
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
RDS(on) , DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2
V
GS
= 4.5 V
I
D
= 4 A
2
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.5
1.5
V
GS
= 4.5 V
I
D
= 2 A
1
1
0.5
0.5
0
−50
−25
0
25
50
75
100
125
150
0
−50
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
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5
Figure 5. On−Resistance Variation with
Temperature
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