A Product Line of
Diodes Incorporated
MMBTA28
80V NPN DARLINGTON TRANSISTOR IN SOT23
Features
BV
CES
> 80V
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
High Current Gain
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (approximate)
SOT23
C
B
E
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Part Number
MMBTA28-7-F
MMBTA28-13-F
Notes:
Compliance
AEC-Q101
AEC-Q101
Marking
K6R
K6R
Reel size (inches)
7
13
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K6R
K6R = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
Feb
2
2011
Y
Mar
3
2012
Z
Apr
4
May
5
YM
2013
A
2014
B
Jul
7
Aug
8
2015
C
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
Jun
6
MMBTA28
Document number: DS30367 Rev. 10 - 2
1 of 6
www.diodes.com
February 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
MMBTA28
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
V
CBO
V
CES
V
EBO
I
C
Value
80
80
12
500
Unit
V
V
V
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
Notes:
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
310
350
403
357
350
-55 to +150
Unit
mW
C/W
C/W
C
5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 15 mm x 15mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the leads).
0.4
400
Max Power Dissipation (W)
Thermal Resistance (°C/W)
350
300
250
200
150
100
50
0
100µ
1m
10m 100m
D=0.2
D=0.5
D=0.1
Single Pulse
D=0.05
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
1
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
10
Transient Thermal Impedance
Max Power Dissipation (W)
Single Pulse. T
amb
=25°C
1
0.1
10m
100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
MMBTA28
Document number: DS30367 Rev. 10 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
MMBTA28
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector cut-off current
Emitter-base Cut-off Current
ON CHARACTERISTICS
(Note 8)
Static Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
(Note 8)
Current Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Note:
Symbol
BV
CBO
BV
CES
BV
EBO
I
CBO
I
CES
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
T
C
obo
C
ibo
Min
80
80
12
—
—
—
10,000
10,000
—
—
125
—
—
Typ
—
—
—
—
—
—
—
Max
—
—
—
100
500
100
—
Unit
V
V
V
nA
nA
nA
—
V
V
MHz
pF
pF
Test Condition
I
C
= 100µA, I
E
= 0
I
C
= 100µA, V
BE
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CE
= 60V, V
BE
= 0
V
EB
= 10V, I
C
= 0
I
C
= 10mA, V
CE
= 5V
I
C
= 100mA, V
CE
= 5V
I
C
= 10mA, I
B
= 10µA
I
C
= 100mA, I
B
= 100µA
I
C
= 100mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V,
f = 100MHz
V
CB
= 10V, f = 1MHz, I
E
= 0
V
EB
= 0.5V, f = 1MHz, I
C
= 0
—
—
—
8.0
15.0
1.2
1.5
2.0
—
—
—
8. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
MMBTA28
Document number: DS30367 Rev. 10 - 2
3 of 6
www.diodes.com
February 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
MMBTA28
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1.1
V
CE(SAT)
, COLLECTOR-EMITTER SATURATION
VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
100
1,000
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
T
A
= 25°C
1.6
V
BE(ON)
, BASE-EMITTER VOLTAGE (V)
I
C
I
B
= 1000
T
A
= -50°C
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1
V
CE
= 5V
T
A
= -50°C
T
A
= 25°C
T
A
= 150°C
T
A
= 150°C
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical Base-Emitter Voltage
vs. Collector Current
100
1,000,000
V
CE
= 5V
1,000
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
h
FE
, DC CURRENT GAIN
100,000
T
A
= 150°C
T
A
= 25°C
100
10,000
T
A
= -50°C
10
1,000
100
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain
vs. Collector Current
1
1
10
COLLECTOR CURRENT I
C
(mA)
Fig. 5 Typical Gain Bandwidth Product
vs. Collector Current
100
MMBTA28
Document number: DS30367 Rev. 10 - 2
4 of 6
www.diodes.com
February 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
MMBTA28
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
H
J
K
A ll 7 °
K 1
a
A
M
L
L 1
C
B
D
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
2.0
C
1.35
E
X
E
MMBTA28
Document number: DS30367 Rev. 10 - 2
5 of 6
www.diodes.com
February 2014
© Diodes Incorporated
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