MMBT3904
40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
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•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT3906)
Ideal for Medium Power Amplification and Switching
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
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•
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Case: SOT23
Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
SOT23
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Notes 4 & 5)
Product
MMBT3904-7-F
MMBT3904Q-7-F
MMBT3904-13-F
Notes:
Compliance
AEC-Q101
Automotive
AEC-Q101
Marking
K1N / C1N
K1N
K1N / C1N
Reel size (inches)
7
7
13
Tape width (mm)
8
8
8
Quantity per reel
3,000
3,000
10.000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
K = SAT (Shanghai Assembly / Test site)
1N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
C = CAT (Chengdu Assembly / Test site)
1N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
Feb
2
2011
Y
Mar
3
2012
Z
Apr
4
May
5
2013
A
Jun
6
2014
B
Jul
7
Aug
8
2015
C
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
MMBT3904
Document number: DS30036 Rev. 20 - 2
1 of 7
www.diodes.com
August 2012
© Diodes Incorporated
MMBT3904
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
60
40
6.0
200
Unit
V
V
V
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
310
350
403
357
350
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings
(Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
≥
8,000
≥
400
Unit
V
V
JEDEC Class
3B
C
6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
7. For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT3904
Document number: DS30036 Rev. 20 - 2
2 of 7
www.diodes.com
August 2012
© Diodes Incorporated
MMBT3904
Thermal Characteristics
0.4
400
Max Power Dissipation (W)
Thermal Resistance (°C/W)
350
300
250
200
150
100
50
0
100µ
1m
10m 100m
D=0.2
D=0.5
D=0.1
Single Pulse
D=0.05
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
1
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
10
Transient Thermal Impedance
Max Power Dissipation (W)
Single Pulse. T
amb
=25°C
1
0.1
10m
100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
MMBT3904
Document number: DS30036 Rev. 20 - 2
3 of 7
www.diodes.com
August 2012
© Diodes Incorporated
MMBT3904
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS
(Note 10)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
I
BL
Min
60
40
6.0
⎯
⎯
40
70
100
60
30
⎯
0.65
⎯
⎯
⎯
1.0
0.5
100
1.0
300
⎯
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
50
50
⎯
⎯
300
⎯
⎯
0.20
0.30
0.85
0.95
4.0
8.0
10
8.0
400
40
⎯
5.0
35
35
200
50
Unit
V
V
V
nA
nA
Test Condition
I
C
= 10μA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3.0V
V
CE
= 30V, V
EB(OFF)
= 3.0V
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
C
= 100μA,
R
S
= 1.0kΩ, f = 1.0kHz
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
V
CE(sat)
V
BE(sat)
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
f
T
NF
t
d
t
r
t
s
t
f
V
V
pF
pF
kΩ
-4
x 10
⎯
μS
MHz
dB
ns
ns
ns
ns
9. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.
MMBT3904
Document number: DS30036 Rev. 20 - 2
4 of 7
www.diodes.com
August 2012
© Diodes Incorporated
MMBT3904
1,000
1
100
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
h
FE
, DC CURRENT GAIN
0.1
10
1
0.1
1
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 1 Typical DC Current Gain vs. Collector Current
0.01
0.1
1
10
1,000
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
10
15
CAPACITANCE (pF)
10
1
5
0.1
0.1
10
100
1,000
1
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
0.1
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance Characteristics
100
1
I
C
, COLLECTOR CURRENT (A)
0.1
DC
Pw = 100ms
Pw = 10ms
0.01
0.001
T
A
= 25°C
Single Non-repetitive Pulse
DUT mounted onto 1xMRP
FR-4 board
0.1
1
10
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 5 Typical Collector Current
vs. Collector-Emitter Voltage
MMBT3904
Document number: DS30036 Rev. 20 - 2
5 of 7
www.diodes.com
August 2012
© Diodes Incorporated
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