roducts., Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Designer's™ Data Sheet
MJ16110*
MJW16110*
POWER TRANSISTORS
15 AMPERES
400 VOLTS
175 AND 135 WATTS
NPN Silicon Power Transistors
SWITCHMODE Bridge Series
. . . specifically designed for use in half bridge and full bridge off line converters.
Excellent Dynamic Saturation Characteristics
Rugged RBSOA Capability
Collector-Emitter Sustaining Voltage — VCEO(SUS) — 400 V
Collector-Emitter Breakdown — V(BR)CES — 650
v
State-of-Art Bipolar Power Transistor Design
Fast Inductive Switching:
tfj = 25 ns (Typ) @ 100°C
t
c
= 50 ns (Typ) @ 100°C
t
sv
= 1 us(Typ)@100°C
• Ultrafast FBSOA Specified
• 100°C Performance Specified for:
RBSOA
Inductive Load Switching
Saturation Voltages
Leakages
MAXIMUM RATINGS
Rating
Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Voltage
Collector Current — Continuous
— Pulsed (1)
Base Current — Continuous
— Pulsed (1)
Total Power Dissipation
@ T
C
= 25°C
@Tc = 100°C
Derated above 25°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Thermal Resistance —
Junction to Case
Maximum Lead Temperature for
Soldering Purposes 1/8" from Case
for 5 Seconds
R0JC
Symbol
v
CEO(sus)
V
CES
MJ16110
MJW16110
400
650
6
15
20
10
15
Unit
Vdc
Vdc
Vdc
Adc
Adc
V
EBO
"c
'CM
IB
!
BM
(FORMERLY TO-3)
MJ16110
PD
175
100
1
135
54
1.09
Watts
W/°C
°C
T
J>
T
stg
-65(0200
-55to150
1
275
0.92
°C/W
°C
TL
TO-247AE
MJW16110
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJ16110MJW16110
ELECTRICAL CHARACTERISTICS
(T
c
=
25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage (Table 1) (Ic = 20 mAdc, IB = 0)
Collector Cutoff Current
(V
CE
= 650 Vdc, V
BE
(off) =
1 5 v
)
(V
CE
= 650 Vdc, V
B
E(off) = 1-5 V, T
C
= 100°C)
Collector Cutoff Current (VCE = 650 Vdc, RBE = 50 iJ, TC = 100°C)
Emitter-Base Leakage (VEB = 6 Vdc, Ic = 0)
ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(IC = 5Adc, le = 0.5Adc)
(IC = 10 Ado, |B = 1.2Adc)
(IC = 10Adc, !
B
= 2Adc)
(IC = 10 Adc, IB = 2 Adc, TC = 100°C)
Base-Emitter Saturation Voltage
(IC = 10 Adc, IB = 2 Adc)
(IC = 10 Adc, IB = 2 Adc, T
C
= 100°C)
DC Current Gain (Ic = 15 Adc, VCE
= 5 vdc
)
DYNAMIC CHARACTERISTICS
Dynamic Saturation
Output Capacitance (VCE
=
10 Vdc, IE = 0, ft
es
t = 1 kHz)
SWITCHING CHARACTERISTICS
Inductive Load (Table 1)
Storage
Crossover
Fall Time
Storage
Crossover
Fall Time
Resistive Load (Table 2)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
(1) Pulse Test: Pulse Width = 300 [is, Duty Cycle < 2%.
Vnc/«m -
J v
<5 V
v
BE(Off)
tsv
v
CEO(sus)
!
CEV
Symbol
Min
Typ
Max
Unit
400
—
—
—
—
—
100
1000
1000
10
Vdc
nAdc
—
!CER
IEBO
VcE(sat)
—
—
jiAdc
I^Adc
Vdc
—
~~
—
0.3
0.7
0.3
0.4
1.2
1.2
12
0.9
2.0
1.0
1.5
Vdc
—
—
6
1.5
1.5
20
—
v
BE(sat)
hFE
VcE(dsat)
See Figures 11, 12, and 13
V
P
F
Cob
—
—
400
Tj = 25°C
tc
tfi
I
C
= 10A, I
B
1=1 A,
\/f*t-/ a\
^ \
v
BE(off)
°
v
'
VcE(pk) = 250 V
Tj = 100°C
tsv
tc
tfi
td
V
CC
= 250 V,
PW = 30 us,
I
B
2 = 2A,
R
B
2 = 4U
tr
ts
tf
ts
—
—
—
—
—
—
—
—
—
—
—
—
700
45
20
1000
50
25
1500
150
75
ns
2000
200
125
15
330
800
110
500
250
—
—
—
—
—
—
ns
tf
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