J.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
One,
TELEPHONE: (973) 376-2922
(212)227-6005
Silicon NPN Power Transistor
MJW16018
DESCRIPTION
• Collector-Emitter Voltage-
: V
C
EO(susf SOOV(Min)
• Fast Turn-Off Time
APPLICATIONS
Designed for high-voltage, high-speed , power switching in
inductive circuits where fall time is critical. They are particu-
larly suited for line operated switchmode applications as:
• Switching Regulators
• Inverters
• Solenoids
• Relay Drivers
• Motor Controls
• Deflection Circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25 C)
SYMBOL
VOEV
VCEO(SUS)
•
•
V
I
,
r
I
'X
PIN
3
1.BASE
2. COLLECTOR
3. EMITTER
ill
1 2 3
TO-247 package
ft_
CK
. T
\r
u
"" G "•-
E^*
k
.
—
,
-
j
n
B
^.j
-j
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@T
C
=25"C
Collector Power Dissipation
@T
C
=100°C
Junction Temperature
Storage Temperature Range
VALUE
1500
800
6
10
15
8
12
125
UNIT
V
V
V
A
A
A
A
A
litfVc U-TOl
;i
i
•
\•
ij
:l
1 j| >
^
;
VEBO
Ic
I CM
'
i
t
r;
',,
i
!;
'
!
K
T i^wv^wp.:^^.*™^,
f
* *.*-,.,.-^
-i
"*
-
•
;
;
•
j~.^-,-™^,^^,..,_J
*
...i
,. y
(
I
:
i
;
•!
:|
'
F-*!!^||
-*;;*•
..
^.
ul?
v
•
:i
!
-»k
i
»-
IB
IBM
•*- -*-H
mm
;,
y
-*—
j
r
p*--«
..
G ••
PC
W
50
150
'C
Tj
T
stg
-55-150
°c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal Resistance, Junction to Case
MAX
1 .0
UNIT
'CM/
R<th)j-c
DIM
WIN
MAX
A 19,80 20.20
B 15,40 15.80
C
4.90 5.10
D
0.90 1.10
E
1.40 1.60
F
1.90 2.10
G 10,80 11.00
H
2.40 2.60
J
0,50 0.70
K 19.50 20,50
P
3.90 4.10
Q
3.30 3.50
U
5 20
5 40
V
2.90 3.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. InTbrmaixni furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. Howevt,. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
VcEO(SUS)
MJW16018
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Capacitance
CONDITIONS
lc=50mA; I
B
=0
I
C
=5A;I
B
=2A
T
C
=100'C
I
C
=10A;I
B
=5A
I
C
=5A ;I
B
=2A
T
C
=100'C
V
C
EV=1500V,V
BE(off)
=1.5V
MIN
800
TYP.
MAX
UNIT
V
VcE(sat)-1
1.0
1.5
5.0
1.5
1.5
0.25
1.50
2.5
0.1
4
450
V
V
V
mA
mA
mA
VcE(sat)-2
VBE(sat)
ICEV
ICER
IEBO
hFE
COB
T
c
=ioo°c
V
CE
=1500V;R
BE
=50Q
T
C
=100'C
V
EB
=6V; l
c
=0
lc=5A ; V
CE
=5V
f=1kHz;Vce=10V
PF
Switching times; Resistive load
td
t
r
Delay Time
Rise Time
Storage Time
Fall Time
lc=5A; I
B
1= I
B2
= 2A;
V
C
c=250V,R
B 2
=3Q;
PW=25 u s
Duty Cycle =£2%
0.085
0.9
4.5
0.2
0.2
2
9
0.4
us
ys
us
us
ts
tf
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