C/
J
, U
na.
TELEPHONE: (973) 376-2922
(212)227-6005
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
usA
Silicon NPN Power Transistor
DESCRIPTION
• Low Collector Saturation Voltage
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 500V(Min)
Wide Area of Safe Operation
MJW16010A
2
APPLICATIONS
• Designed for high-voltage, high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line-operated switchmode applications.
Typical applications:
• Switching regulators
• Inverters
• Solenoids
• Relay drivers
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
VCEV
VCEO
VEBO
Ic
ICM
IB
IBM
PC
Tj
1
|
•^
1
'
»
2
c
3
PIN 1.BASE
1.
COLLECTOR
3. EMITTER
TO-3PN package
c -«-
-1 A
'.''-, J
1
)
1
-Y-,_
F
—
1
T"~
/
1
1
<^J
PARAMETER
Collector-EmitterVoltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@ T
C
=25"C
Junction Temperature
Storage Temperature Range
VALUE
1000
500
6
15
20
10
15
135
150
UNIT
V
V
V
A
A
A
A
W
1
1
E
-
'•'
.<* -*
ri
j!'*-L
mm
DIM
MIN
MAX
A
19.90
20.10
B 15.50 15.70
r
4.70 4.90
D
0.90
1.10
E
1.90
2.10
F
3.40 3.60
G
2.90
3.10
H
3.20
3.40
J
K
L
N
Q
R
•c
•c
T
s
tg
-55-150
0.595 0.605
20.50 20.70
1.90
2.10
10.89 10.91
4.90
5.10
3.35 3.45
1.995
2.005
5.90
6.10
9.90 10.10
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
0.92
UNIT
S
U
Y
•c/w
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25'C unless otherwise specified
SYMBOL
VCEO(SUS)
MJW16010A
PARAMETER
CONDITIONS
l
c
=100mA;l
B
=0
lc= 5A; I
B
= 1A
I
C
=10A;I
B
=2A
lc=10A;lB=2A;Tc=10(rC
I
C
=10A;I
B
=2A
lc=10A;l
B
=2A;T
c
=100r
VCEV= 1 0OOV;V
B
E(om= 1 • 5V
V
CE
v=1 OOOV;V
BE
(om=1 .5V;T
C
=1 00 "C
VCE= 1000V;R
B
E= 50 Q ;T
C
=100'C
MIN
TYP.
MAX
UNIT
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Capacitance
500
0.7
1.0
1.5
1.5
0.15
1.0
1.0
V
V
VcE(sat)-1
VcE(sat)-2
V
V
mA
V
B
E(sat)
ICEV
ICER
mA
IEBO
V
eB
= 6V; l
c
=0
0.15
5
8
mA
hFE
Coe
lc=15A;V
C E
=5V
I
E
=O;VGS= 1 0V, f
t
est= 1 .OkHz
400
pF
Switching times;Resistive load(P
w
= 30 n s; Duty Cycle:S2%)
Id
tr
Delay Time
Rise Time
Storage Time
Fall Time
0.1
0.6
3.0
0.4
us
us
us
us
|
C
=10A;I
B
1=1.3A;I
B2
=2.6A;
R
B2
= 1.6 Q;V
CC
= 250V
l
stg
tf
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