-/£ii£u
<^>£.mi-(~onauctoi
l/-\oaue£i,
Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (973) 376-2922
(212)227-6005
U.S.A.
Silicon NPN Power Transistors
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: V
CE
o(sus) = 400V(Min)—MJH13090
= 450V(Min)—MJH13091
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCEV
PARAMETER
Collector-Emitter
Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@T
C
=25'C
Junction Temperature
Storage Temperature
MJH13090
MJH13091
MJH 13090
MJH13091
VALUE
650
V
750
400
V
450
6
15
20
5
10
125
150
V
A
A
A
A
W
"C
1
MJH13090/13091
i
PIN 1.BASE
1.
COLLECTOR
3. EMI TIER
TO-3PN package
2
3
tt]
UNIT
VcEO(SUS)
VEBO
Ic
ICM
IB
IBM
PC
Tj
Tstg
mm
DIM
A
B
C
D
MIN
MAX
-65-150
°c
E
F
G
H
J
K
L
N
q
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance.Junction to Case
MAX
UNIT
"C/W
1.0
R
S
U
Y
19.90
15.50
4.70
0.90
1.90
3.40
2.90
3.20
0.595
20.50
1.90
10.89
4.90
3.35
1.995
5.90
9.90
20.10
15.70
4.90
1.10
2.10
3.60
3.10
3.40
0.605
20.70
2.10
10.91
5.10
3.45
2.005
6.10
10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Qualify Semi-Conductors
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25°C unless otherwise specified
SYMBOL
PARAMETER
MJH 13090
VcEO(SUS)
MJH13090/13091
CONDITIONS
MIN
400
TYP.
MAX
UNIT
Collector-Emitter
Sustaining Voltage
MJH13091
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
MJH13090
i~— ifirirviA • ir,—n
450
V
VcE(sat)-l
I
G
= 10A; I
B
=2A
I
C
=10A;I
B
=2A;T
C
=100°C
I
C
=15A;I
B
=3A
I
C
=10A;I
B
=2A
lc=10A;l
B
=2A;T
c
=100-C
V
C
Ev=650V;V
BE(off)
=1.5V
VcEv=650V;VBE<off)=1 .5V;T
C
=1 00 'C
VcEv=750V;V
BE(off)
=1.5V
VcEv=750V;V
B
E(off)=1 .5V;T
C
=100'C
V
CE
= 650V; R
BE
= 50 Q ,T
C
= 100'C
V
CE
= 750V; R
BE
= 50 O ,T
C
= 1 00
"C
V
EB
= 6V; l
c
=0
lc=10A;V
CE
=3V
l
E
=0;Vc
B
=10V;f
te
st=1.0kHz
8
1.0
2.0
3.0
V
V
V
VcE(sat)-2
VeE(sat)
1.5
1.5
0.5
2.5
ICEV
Collector
Cutoff Current
mA
MJH13091
MJH13090
0.5
2.5
3.0
mA
3.0
1.0
ICER
Collector
Cutoff Current
MJH 13091
IEBO
hFE
COB
Emitter Cutoff Current
DC Current Gain
Output Capacitance
mA
350
PF
Switching times;Resistive Load
td
tr
ts
tf
Delay Time
Rise Time
Storage Time
Fall Time
lc=10A,V
C
c=250V;
Duty Cycle<2.0%
30
130
550
100
50
500
ns
ns
ns
ns
2500
500
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
