J
ziiz
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
iJ-^ioaucti, Una.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Darlington Power Transistor
MJH11017
DESCRIPTION
• High DC Current Gain-
: h
FE
= 400(Min)@l
c
=-10A
• Collector-Emitter Sustaining Voltage-
: V
C
EO(sus)=-150V(Min)
• Low Collector-Emitter Saturation Voltage-
: VcE(sat) = -2.5V(Max)@ l
c
= -10A
= -4.0V(Max)@l
c
=-15A
• Complement to Type MJH11018
APPLICATIONS
• Designed for general purpose amplifiers ,low frequency
switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
1
T
1
1
. T r i_
?2
1
t
I
4—
iw*-
S
*
J
—*^£— —
2. COLL ECTOR
3. EMIT
PER
2
3
TO-3Pf
j
package
*— &—
-*-Y-*-
/°
~^
it 4
VALUE
-150
-150
-5
-15
-30
-0.5
150
150
-65-150
UNIT
V
V
V
A
A
A
W
'C
'
1
K
r*
C -—
-*-s
'
';.
/ ,'
'
SYMBOL
VCBO
VCEO
VEBO
Ic
I CM
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
Collector Power Dissipation
@T
C
=25°C
Junction Temperature
Storage Temperature Range
H
f
:
,
•.;
•-.
„,
U
mm
WIN
DIM
A
19.90
B
15.50
C
4.70
D
0.90
MAX
IB
PC
Tj
T
stg
E
F
G
H
J
K
L
N
°c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal Resistance.Junction to Case
MAX
0.83
UNIT
q
R
th j-c
°c/w
s
u
Y
R
1.90
3.40
2.90
3.20
0.595
20.50
1.90
10.89
4.90
3.35
1.995
5.90
9.90
20.10
15.70
4.90
1.10
2.10
3.60
3.10
3.40
0.605
20.70
2.10
10.91
5.10
3.45
2.005
6.10
10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25'C unless otherwise specified
SYMBOL
MJH11017
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
CONDITIONS
MIN
TYP.
MAX
UNIT
VcEO(SUS)
l
c
= -100mA, I
B
=0
-150
V
VcE(sat)-1
I
C
=-10A,I
B
=-0,1A
-2.5
V
VcE(sat)-2
lc=-15A,l
B
=-0.15A
-4.0
V
VeE(sat)
lc=-15A,l
B
=-0.15A
-3.8
V
VBE(on)
lc=-10A;V
C
E=-5V
VcE
V
=150V;V
BE
(off)=1.5V
V
CE
v=1 50V;V
BE(0
frr 1 .5V;T
C
=1 50 °C
V
CE
= -75V, I
B
=0
-2.8
-0.5
-5.0
-1
V
ICEV
mA
ICEO
mA
mA
IEBO
V
EB
= -5V; l
c
=0
-2
hpE-1
l
c
=-10A;VcE=-5V
400
15000
hFE-2
lc=-15A;V
C
E=-5V
100
COB
l
E
=0;V
CB
=-10V,f=0.1MHz
600
PF
Switching times
td
tr
ts
tf
Delay Time
Rise Time
Storage Time
Fall Time
lc=-10A,V
C
c=-100V;
!„—
-U.
1 A .
\/-^,
„
-OV,
n
l/\ V
B
E(off)
c\/-
I
B
75
0.5
2.7
2.5
ns
us
IJ S
Duty Cycled. 0%
|l S
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
