, Dna.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistors
MJF44H11
DESCRIPTION
• Low Collector Saturation Voltage-
• »UE(sat)
i .VV^IVICIA./^ ic
""
• Fast Switching Speeds
• Complement to Type MJF45H11
APPLICATIONS
• Designed for general purpose power amplification and
switching such as output or driver stages in applications
such as switching regulators, converters and power amplifier.
^m
'
P'
1 2 3
PIN 1.BASE
2 COLLECTOR
3. EMITTER
TO-220F package
3
B
-
f
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCEO
-s-
Q
- C -
1
PARAMETER
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@T
C
=25"C
VALUE
80
5
10
20
36
UNIT
F
;-: :..: rJ
*
:
- "' '
,-~i " - •' i- •,
•")
,-••-
0
'
'
'
y i " •:
:
' < 0
• - , ol'
-
..r
;
»
'
.: " I
(
:A
1
V
V
;'
VEBO
,
Ic
ICM
A
A
L
, r ;J ., •
i
;
: :
;
H
K
- R-
,,,.';,
]
:
! :
- -o
W
- N -
j ,,
mm
DIM
WIN
MAX
A 14.95 15.05
B 10.00 10.10
C
4.40 4.60
D
0.75 0.80
F
3.10 3.30
H
3.70 3.90
J
0.50 0-70
K
13.4 13.6
L
1.10 1.30
N
5.00 5.20
Q
2.70 2.90
R
2.20 2.40
S
2.65 2.85
U
6.40 6.60
PC
Collector Power Dissipation
@T
a
=25t:
Junction Temperature
Storage Temperature Range
2
150
"C
"C
Tj
Tstg
-55-150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
3.5
UNIT
•c/w
•c/w
Rth j-a
Thermal Resistance, Junction to Ambient 62.5
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
Tc=25*C unless otherwise specified
SYMBOL
VcEO(SUS)
MJF44H11
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
Current-Gain — Bandwidth Product
CONDITIONS
l
c
= 30mA; I
B
= 0
I
C
=8A;I
B
=0.4A
I
C
=8A;I
B
=0.8A
V
C
E=Rated VCEO;
VEB= 5V; l
c
= 0
lc=2A;V
C
E=1V
lc=4A; VCE= 1V
V
CB
=10V, f= 0.1 MHz
lc= 0.5A; V
CE
= 10V; f
tes
t=20MHz
MIN
80
TYP
MAX
UNIT
V
VcE(sat)
1.0
1.5
1.0
10
60
40
130
50
V
V
uA
uA
VeE(sat)
ICES
IEBO
hpE-1
hFE-2
COB
fr
PF
MHz
Switching Times
ton
Turn-On Time
Storage Time
Fall Time
lc= 5A; I
B
1= 0.5A
0.3
0.5
0.14
us
us
us
ts
tf
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