(.7
'Jiiieu tSsmi-danducto'i ^Pioaucti, One..
J
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MJE8502
MJE8503
S.O AMPERE
SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS
The MJE8502 and MJE8503 transistors are designed for high-
voltage, high-speed, power switching in inductive circuits where fall
time is critical. They are particularly suited for line operated switch-
mode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn-Off Times
NPN SILICON
POWER TRANSISTORS
700 and BOO VOLTS
8O WATTS
Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet per-
mits the design of most circuits
entirely from the information pre-
sented. Limit data - representing
device characteristics boundaries —
are given to facilitate "worst case"
design.
1 50 ns Inductive Fall TtmB-26°C (Typl
400 ns Inductive Crossover Tims— 2B°C (Typ)
1200 ns Inductive Storage Time-2S°C (Typ)
Operating Temperature Range —66 to +12BOC
100°C Performance Specified for;
Reverse-Biased SO A with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector. Bmitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak (11
Bale Current — Continuous
Peak Ml
Total Power Oiftipation ® TC * 25°C
Symbol
VCEOIsus)
MJE8502
700
1200
MJE8B03
BOO
1400
Unit
Vdc
Vdo
Vdc
Ado
Adc
@T
C
•= ioo°c
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
VCEV
Vee
'c
ICM
<B
IBM
PD
T
J*
T
«g
8.0
8.0
G.O
10
4.0
8.0
80
21
0.80
0.80
-6510*126
5,0
10
4.0
8.0
80
21
Watt*
W/°C
°C
B| [
Symbol
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 6 Seconds
(1) Pulse Test: Pulse Width • 6 ms. Duly Cycle
f.
10%.
•.^tafifttHMMfChiHotAiif
1.26
27S
°C
T
L
TO-220AB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before plaeiniz orders.
Ounl.lv
MJE8502, MJE8503
ELECTRICAL CHARACTERISTICS (T
c
» 2S°C unless otherwise noted)
E
OFF CHARACTERISTICS
Characteristic
Symbol
VcEO(sus)
700
BOO
Typ
-
\
"""
-
I
Vdc
Collector-Emitter Sustaining Voltage (Table 1)
MJE8502
(I
C
• 100 mA. IB • 0)
MJE8503
Collector Cutoff Currant
(VcEV " Bated Value. VgEloff I " 1 -5 Vdcl
(VCEV *
RotMl
Value. VrjEloffl • 1.5 Vdc, TC - 100°C)
Collector Cutoff Current
(V
CE
- Rated VCEV. «BE -SO I . T
c
=• IOO°C)
!
Emitter Cutoff Current
(V
EB
- 7.0
Vdc,
l
c
- 01
ICEV
-
-
~
rnAdc
025
5.0
6.0
1.0
ICER
'EBO
~
~
mAdc
mAdc
~~
SECOND BREAKDOWN
Second Breakdown Collector Currant with bale forward biased
'sit,
F1DSOA
Clamped Inductive 5OA with Base Reverse Biased
ON CHARACTERISTICS (11
DC Currant Gain
hFE
(1C = 1 .0
Adc,
VCE - 5.0
Vdc)
Collector-Emitter Saturation Voltage
VcE(sat)
(1C
=
2.5
Adc,
IB
-1.0 Adc)
(I
C
• 5.0
Adc,
IB • 2.0
Adc)
(I
C
- 2,5 Adc, IB • 1.0 Adc, T
C
- 100°Ct
Base-Emitter Saturation Voltage
v
BE(sat)
(IC-2.5 Adc, l
e
-1.0 Adc)
dC • 3-5 Adc. IB = 1.0 Adc, T
C
- 100°C)
DYNAMIC CHARACTERISTICS
Output Capacitance
1
C
DD
(VCB- lOVdc, l
£
=0, f
res
, = I.OkHz)
|
SWITCHING CHARACTERISTICS
Resistive Load (Table 1 )
Delay Time
>d
(Vcc
= 600
Vdc,
lc - 2.5 A,
Rise Time
tr
lB1 - 1-0 A, VBE(off) - 5.0 Vdc, t
p
- 50
M
a,
Storage Time
's
Duly Cycle •: 2.0%)
Fall Time
If
Inductive Load, C amped (Table 1 )
Storage Time
tsv
(1C • 2.6 A(pk|, Vdamp - 500 Vdc, 101 - 1.0 A.
Crossover Time
VflEloff) ' 5 Vdc, TC - 100°C>
tc
Storage Time
'sv
(1C - 2.5 A(pk|, V
0
i
8mp
- 600 Vdc, IBI - 1.0 A,
Crossover Time
<c
VflEloffl "
5
Vdc. TC - 25°C)
Fall Time
<fi
111 Pulse Test: PW • 300ps. Duty Cycle « 2K.
See Figure 12
See Figure 13
7.5
~~
~
Vdc
-
-
2.0
5.0
3.0
Vdc
-
~
1.6
1.6
300
PF
60
-
-
-
-
-
—
—
-
-
0,040
0.125
0.20
PS
PS
PS
PS
1.2
0.66
2.0
4.0
2.0
5.0
2.0
-
-
1.6
0.60
PS
PS
PS
1.2
0.4
0.1S
CI
PS