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MJE8503

产品描述SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
产品类别分立半导体    晶体管   
文件大小101KB,共3页
制造商New Jersey Semiconductor
官网地址http://www.njsemi.com
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MJE8503概述

SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS

MJE8503规格参数

参数名称属性值
厂商名称New Jersey Semiconductor
包装说明FLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Is SamacsysN
最大集电极电流 (IC)5 A
集电极-发射极最大电压800 V
JESD-30 代码R-PSFM-T3
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型NPN
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管元件材料SILICON
Base Number Matches1

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TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MJE8502
MJE8503
S.O AMPERE
SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS
The MJE8502 and MJE8503 transistors are designed for high-
voltage, high-speed, power switching in inductive circuits where fall
time is critical. They are particularly suited for line operated switch-
mode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn-Off Times
NPN SILICON
POWER TRANSISTORS
700 and BOO VOLTS
8O WATTS
Designer's Data for
"Worst Case" Conditions
The Designers Data Sheet per-
mits the design of most circuits
entirely from the information pre-
sented. Limit data - representing
device characteristics boundaries —
are given to facilitate "worst case"
design.
1 50 ns Inductive Fall TtmB-26°C (Typl
400 ns Inductive Crossover Tims— 2B°C (Typ)
1200 ns Inductive Storage Time-2S°C (Typ)
Operating Temperature Range —66 to +12BOC
100°C Performance Specified for;
Reverse-Biased SO A with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector. Bmitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak (11
Bale Current — Continuous
Peak Ml
Total Power Oiftipation ® TC * 25°C
Symbol
VCEOIsus)
MJE8502
700
1200
MJE8B03
BOO
1400
Unit
Vdc
Vdo
Vdc
Ado
Adc
@T
C
•= ioo°c
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
VCEV
Vee
'c
ICM
<B
IBM
PD
T
J*
T
«g
8.0
8.0
G.O
10
4.0
8.0
80
21
0.80
0.80
-6510*126
5,0
10
4.0
8.0
80
21
Watt*
W/°C
°C
B| [
Symbol
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 6 Seconds
(1) Pulse Test: Pulse Width • 6 ms. Duly Cycle
f.
10%.
•.^tafifttHMMfChiHotAiif
1.26
27S
°C
T
L
TO-220AB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before plaeiniz orders.
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MJE8503相似产品对比

MJE8503 MJE8502
描述 SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS

 
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