^mi-Conductor ZPioducti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
SWITCHMODE Series
PNP Silicon Power Transistors
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-volt-
age, high-speed, power switching in inductive circuits where fall time is critical. They
are particularly suited for line operated switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn-Off Times
100 ns Inductive Fall Time @ 25°C (Typ)
125 ns Inductive Crossover Time @ 25°C (Typ)
Operating Temperature Range -65 to +150°C
100°C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
Peak(1)
Base Current — Continuous
Peak(1)
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
MJE5850
MJE5851
MJE5850
MJE5851*
MJE5852*
•Motorola Preferred Device
8 AMPERE
PNP SILICON
POWER TRANSISTORS
300, 350, 400 VOLTS
80 WATTS
TO-220AB
MJE5852
Unit
VCEO(SUS)
V
CEV
VEB
IG
'CM
IB
!
BM
PD
TJ, T
stg
300
350
350
400
6.0
8.0
1
6
4.0
8.0
80
0.640
-65to 150
400
450
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
Symbol
Max
1.25
275
Unit
Rejc
TL
°C/W
°c
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N'.l Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Qunlitv
MJE5850 MJE5851 MJE5852
ELECTRICAL CHARACTERISTICS
(Tc
=
25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(l
c
= 10mA, I
B
= 0)
MJE5850
MJE5851
MJE5852
Symbol
Win
Typ
Max
Unit
VCEO(SUS)
ICEV
300
350
400
Vdc
—
—
—
—
—
mAdc
0.5
2.5
3.0
1.0
Collector Cutoff Current
(VCEV = Rated Value, V
B
E(off) =
1
-5 Vdc)
(VCEV =
Rated
Value, VsE(off) =
1
-
5 vd
c,
T
C = 100°C)
Collector Cutoff Current
(V
C
E = Rated V
CEV
, R
BE
= 50
a,
TC = 100°C)
Emitter Cutoff Current
—
'CER
—
mAdc
mAdc
<VEB = 6-0 vdc, ic = o)
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with base reverse biased
"ON CHARACTERISTICS
DC Current Gain
(l
c
= 2.0 Adc, VCE =
5 Vdc
)
(l
c
= 5.0 Adc, VCE =
5
Vdc)
Collector-Emitter Saturation Voltage
(lc = 4.0 Adc, IB = 1 .0 Adc)
(IC = 8.0Adc, IB = 3.0 Adc)
(IC = 4.0 Adc, IB = 1 .0 Adc, T
C
= 100°C)
Base-Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 1 .0 Adc)
(IC = 4.0 Adc, IB = 1 .0 Ado, TC = 100°C)
DYNAMIC CHARACTERISTICS
Output Capacitance
'EBO
—
'S/b
RBSOA
See Figure 12
See Figure 13
hFE
15
5
v
CE(sat)
—
—
Vdc
—
—
2.0
5.0
2.5
VBE(sat)
Vdc
—
—
1.5
1.5
(VCB = 10 vdc, I
E
= o, f
tes
t = 1 o kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
(Vcc = 250 Vdc, lc = 4.0 A, I
B
1 = 1 .0 A,
t
p
- 50 us, Duty Cycle < 2%)
(Vcc = 250 Vdc, lc = 4.0 A, Ig1 = 1 .0 A,
v
BE(off) =
5
Vdc,
l
p =
50
US, Duty Cycle < 2%)
Cob
—
270
—
pF
•d
tr
ts
tf
—
—
—
—
0.025
0.100
0.60
0.11
0.1
0.5
2.0
0.5
us
US
us
US
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
1
Pulse
(ICM - 4 A, VCEM = 250 v, i
B
i - 1 .0 A,
v
BE(off)
tsv
tc
tfi
—
—
—
—
—
—
0.8
0.4
0.1
0.5
0.125
0.1
3.0
1.5
—
—
—
—
us
US
~
5 Vdc
.
T
C = 100°C)
us
us
US
('CM -
4 A
.
V
CEM - 250 v, IBI - 1 .0 A,
V
B
E(off) = 5Vdc,T
C
= 25°C)
»sv
tc
tfi
us
Test: PW = 300 us. Duty Cycle < 2%
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