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MJE350

产品描述POWER TRANSISTOR
产品类别分立半导体    晶体管   
文件大小81KB,共3页
制造商New Jersey Semiconductor
官网地址http://www.njsemi.com
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MJE350概述

POWER TRANSISTOR

功率晶体管

MJE350规格参数

参数名称属性值
厂商名称New Jersey Semiconductor
包装说明FLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
最大集电极电流 (IC)0.5 A
集电极-发射极最大电压300 V
配置SINGLE
JESD-30 代码R-PSFM-T3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
极性/信道类型PNP
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管元件材料SILICON

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^zmi-donauckoi ZPioaucti, One.
MJE350
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Plastic Medium Power
PNP Silicon Transistor
This device is designed for use in line-operated applications such as
low power, line-operated series pass and switching regulators
requiring PNP capability.
Features
• High Collector-Emitter Sustaining Voltage -
V
C
EO(sus)=300Vdc@I
C
= 1.0 mAdc
• Excellent DC Current Gain -
h
FE
= 30-240@I
c
= 50 mAdc
• Plastic Thermopad Package
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS, 20 WATTS
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation @ T
c
= 25 °C
Derate above 25 °C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Symbol
VCEO
VEB
Ic
PD
Tj, T
s
,g
Value
300
3.0
500
20
0.16
-65 to +150
Unit
Vdc
Vdc
TO-225
mAdc
W
mW/°C
°C
Unit
6.25
°c/w
Thermal Resistance, Junction-to-Case
9jc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
(T
c
=
25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(l
c
= 1 .0 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 300 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, l
c
= 0)
ON CHARACTERISTICS
DC Current Gain
(l
c
= 50 mAdc, V
CE
= 1 0 Vdc)
hFE
30
240
-
| Symbol
Min
Max
Unit
|
VCEO(SUS)
ICBO
!EBO
300
-
_
-
100
100
Vdc
I^Adc
(iAdc
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

 
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