MJE220 THRU MJE225
w w w. c e n t r a l s e m i . c o m
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE220 series
types are NPN silicon power transistors, manufactured
by the epitaxial-base process, designed for general
purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MJE220
MJE221
MJE222
60
40
MJE223
MJE224
MJE225
80
60
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCEO
BVCEO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
hFE
hFE
fT
Cob
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
7.0
4.0
8.0
1.0
1.5
15
-65 to +150
83.4
8.34
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
°C/W
CHARACTERISTICS:
(TC=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=Rated VCBO
VCB=Rated VCBO, TC=125°C
VEB=7.0V
IC=10mA (MJE220, MJE221, MJE222)
40
IC=10mA (MJE223, MJE224, MJE225)
60
IC=500mA, IB=50mA
IC=1.0A, IB=100mA (MJE221, MJE224)
IC=2.0A, IB=200mA (MJE220, MJE223)
IC=4.0A, IB=1.0A
IC=2.0A, IB=200mA
VCE=1.0V, IC=500mA
VCE=1.0V, IC=200mA (MJE220, MJE223)
40
VCE=1.0V, IC=200mA (MJE221, MJE224)
40
VCE=1.0V, IC=200mA (MJE222, MJE225)
25
VCE=1.0V, IC=1.0A (MJE221, MJE224)
20
VCE=1.0V, IC=1.0A (MJE222, MJE225)
10
VCE=1.0V, IC=2.0A (MJE220, MJE223)
20
VCE=10V, IC=100mA, f=10MHz
VCE=10V, IE=0, f=100kHz
TYP
MAX
100
100
100
0.3
0.6
0.8
2.5
1.8
1.5
200
150
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
10
50
MHz
pF
R2 (26-November 2012)
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
