ne.
,
O
20 STERN AVE.
SPRINGFIELD, NEW JERSEY
07081
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJE1 090 mn, MJE1 093 PNP
(
S,LICON>
MJE2090,h
tu
MJE2093
MJE1100.hruMJE1103NPN
MJE2100^MJE2103
5.0 AMPERE
PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON
60-80 VOLTS
70 WATTS
MJE1090
MJE109I
MJE1092
MJE1093
MJEItOO
MJE1101
MJE1102
MJE1103
Designed for use in driver and output stages in complementary
audio amplifier applications.
• High DC Current Gam -
hcg = 750 (Win) @ IG = 30and 4 0 Adc
•
True Three Lead Monolithic Construction
—
Emitter-Base Resistors
to Prevent Leakage Multiplication are Built in.
• Available in Two Packages - Case 90 or Case 199
MAXIMUM RATINGS
MJE1090
MJE10B1
MJE1100
MJE1U1
MJE2MO
MJEJOB1
MJE2100
MJE2101
60
60
5.0
50
RiTino
Symbol
MJE1092
MJE1M3
MJE1102
MJE1103
MJE2092
MJE2003
MJEZ102
MJE2103
80
80
Unit
CASE 90-05
Vdc
Vdc
Collector-Enrnttr Voltage
Collector-Bau Voltage
Ernimr-Batt Voltage
Collector Current
6vte Current
Total Device Diiupation @ T
c
• 25°C
Derate above 25°C
Operating and Storage Junction
Ternperatinq Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
VCEO
V
CB
VEB
'c
>B
P
D
ViJc
Adc
Adc
01
70
056
Watts
W/°C
T
J'
T
itg
-55to»150
°C
MJE2090
MJE20S1
MJE20S5
MJE20S3
MJE210Q
MJE3101
MJE2102
MJE2103
Symbol
OJC
M»
1.8
Unit
°C/W
FIGURE 1 - POWER DERATING
PO. POWER DISSIPATIO* iVIAT'SI
S
X
N
X
i
5
SS
3
CASE 199-04
N
8
k.
N
\
120
140
ISC
=
S
S
20
ID
60
U
100
T
C
, CAS£TEMKRATU»E(
0
C)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and pa^ftge dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
MJE1090 thru MJE1093 PNP/MJE1100 thru MJE1103 NPN (continued)
MJE2090thru MJE2093 PNP/MJE2100 thru MJE2103 NPN
ELECTRICAL CHARACTERISTICS
IT
C
-
25°C uniw oth.rwiw noi«d)
Chtraewtatte
1 Symbol
[
Min
|
M»
Unit
Vdc
off
CHARACTERISTICS
CottMtor-Entintr BfHkdown Volug*"'
(l
c
- 100 mAdc, I
B
« 0)
MJE1090, MJE 1091, MJE 1100. MJE 1 101
MJE2090, MJE2091, MJE2100. MJE2101
MJET092, MJE 1093, MJE 1 K)2, MJE 1 103
MJE2092, MJ62093, MJE 2 102, MJE2103
Collector Cutoff Currant
IV
CE
-30Vdc, I
S
= 01
MJE1090, MJE1091.MJE1100. MJE1101
MJE 2090, MJE2091. MJE210O, MJP2101
(V
C
E - 40 Vdc, I
B
- 0)
MJE 1092, MJE 1093. MJE1102, MJ61103
MJE 2092, MJE2093. MJE2102. MJE 2 103
CollKtor Cutoff Current
(V
CB
- RlUd BV
CEO
, l£ ' 0'
BVceo
60
60
80
80
-
-
_
soo
$00
'CEO
(jAdc
L
:
ICBO
IEBO
soo
500
0.2
2.0
2.0
_j
(VCB - R««d BVceo. IE - o, T
C
- ioo°c>
-
—
mAdc
mAdc
Emitter Cutoff Currant
(V
8E
- S.O Vdc, lc * 0)
ON CHARACTERISTICS (II
DC Current Giin
(1C - 3.0 Adc. V
CE
"S.OVdcl
(1C - 4.0 Adc, VCE -3.0 Vdc)
MJE1090. MJE 1092, MJE1100, MJE1102
MJE 2090, MJE 2092, MJE210O, MJE2102
MJE 1091. MJE 1093, MJE 1101, MJE 1103
MJE2Q91. MJE2093
1
MJE2101, MJE2103
MJE1090. MJE 1092, MJE 1100, MJE1 102
MJE2090, MJE2092, MJE2100, MJE 2 102
MJE1091, MJE1093, MJE 1101, MJE1103
MJE2091. Mje2093. MJE2101. MJ^103
MJE 1090, MJE 1092, MJE 1 100, MJE 1102
MJE 2090. MJE2092. MJE2100. MJE2102
MJE1091.MJE 1093, MJE 1101. MJE 1103
MJE2091, MJE2093. MJE2101. MJE2103
hFE
750
750
750
750
-
-
-
-
-
CollKtor-EmitttrS*tur>tion Voltag*
(1C -3.0 Adc, I
8
- 12mAde)
(1C
-*-0
Adc, I
B
- 16mAdcl
Bn*-Emitt>r On Voltagt
(1C- 3.0 Adc, VCE *3.0 Vocl
(1C -4.0 Adc. VCE • 3.0 Vdc)
V
CE
Isai)
Vdc
2.5
2.5
2.8
2.8
Vdc
v
BE(on)
-
-
2.5
25
25
2.5
DYNAMIC CHARACTERISTICS
Snull-Signd Currtnt Glin
(I
C
- 3.0 Adc. VCE -3.0 Vdc, I- 1.0 MHz)
lu
T.it Pul» Width < 300 |». Duty Cycl* < 2 OS
"1,
1.0
-
-
FIGURE
2 -
DC SAF6 OPERATING AREA
, .. —„_
—
iiconi
nakdlMN Lnnitm
flw™
1, L
mind It IC-JS°C
Wu
LMiud
k
x
;-'MJEIOM.i
1 , —
- - MJE2090. 91 | -
- - HJEIWO,OI|~
MJC2IOO, 01 ' ~
MJE1D92.1
s
-=:
\
\
la
u
There
are two limitanons on ihp power handling Ability Of a
Uansistor:
junction tempuraiure and >«condarv bregkdown Safe
1
; • 25"
c
Kjenra.a
HJE2W,0
1 '
I
1
"
Z^ —
\
MI nign
case
temperatures, thermal limitations will reduce the
power
thai can be handled to values Ivss than the limitations
imposed by secondary breakdown (See AN.415)
m n
10
20
30
so
n
100
E. COUECTOfl EMITTtB yOlt*GE [VOLTS!
FIGURE 3 - DARLINGTON CIRCUIT SCHEMATIC
PNP
MJO090
tnru
MJE1093
MJE2090
thru
MJEZ093
e.««o
NfN
HUE
11
DO Ba»O
CrnittAr
嵌入式系统
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