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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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Lfnc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
MJE18006
DESCRIPTION
• Collector-Base Breakdown Voltage-
:V
(B
R)CBO=1000V(Min)
• High Switching Speed
PIN 1.BASE
APPLICATIONS
• Designed for use in 220V line-operated switchmode power
supplies and electronic light ballasts
1 2 3
2.COLLECTOR
3.BWIITTER
TO-220C package
B
>-\j
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
VCBO
VCEO
VEBO
Ic
ICM
IB
IBM
PD
Tj
Tsig
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Total Power Dissipation@Tc=25°C
Junction Temperature
Storage Temperature
VALUE
1000
450
9
6
15
4
8
100
150
UNIT
V
V
V
A
A
A
A
W
'C
'C
WF^
aoi-.i
K
i
J=3
mm
DIM
win
A
15.70
9.90
B
C
4.20
D
0.70
3.40
F
G
MIU
-65-150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
Rth j-a
PARAMETER
Thermal Rresistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.25
62.5
UNIT
'C/W
"CM/
H
J
K
L
0
R
s
u
V
4.98
2.70
0.44
13.20
1.10
2.70
2.50
1.29
6.45
8.66
MAX
15.90
10.10
4.40
0.90
3.60
5.18
2.90
0.46
13.40
1.30
2.90
2.70
1.31
6.65
8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 C unless otherwise specified
SYMBOL
VcEO(SUS)
MJE18006
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
CONDITIONS
lc=0,1A;L=25mH
I
C
=1-5A;I
B
=0.15A
T
C
=125"C
lo=3A;l
B
=0.6A
T
C
=125'C
lc= 1.5A; I
B
=0.15A
lc= 3A; I
B
= 0.6A
MIN
450
TYP
MAX
UNIT
V
VcE(sat)-1
VcE(sat)-2
VBE(sat)-1
VBE(sat)-2
0.6
0.65
0.7
0.8
1.2
1.3
0.1
0.5
V
V
V
V
ICES
Collector Cutoff Current
VcES=RatedV
C
ES; V
EB
= 0
T
C
=125'C
V
C
ES=800VT
C
=125'C
mA
0.1
0.1
0.1
14
6
11
10
14
75
MHz
PF
34
mA
mA
ICEO
IEBO
hpE-1
hpE-2
Collector Cutoff Current
Emitter Cutoff current
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
Current-Gain — Bandwidth Product
Output Capacitance
V
CE
= RatedVceo; ln=0
V
EB
= 9V; l
c
=0
lc= 0.5A ; V
CE
= 5V
lc=3A;V
CE
=1V
I
C
=1.5A;V
C E
=1V
lc=10mA;V
C
E=5V
lc= 0.5A; V
CE
=10V; f
tes
,=1.0MHz
lE=0;V
CB
=10V;f
tes
,=1.0MHz
hFE-3
hFE-4
fr
COB
Switching Times Resistive Load.Duty Cycle's 10%,Pulse Width=20 u s
ton
Turn-on Time
Turn-off Time
Turn-on Time
Vcc=300V,l
c
=1.3A
I
B
1=0.13A; I
B2
=0.65A
Turn-off Time
V
cc
= 300V ,l
c
= 3A
I
B
1=0.6A;I
B
2=1.5A
90
1.7
0.2
1.2
180
2.5
0.3
2.5
ns
toff
us
us
us
ton
toff
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