SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
・Built-in
Free wheeling Diode makes efficient anti saturation operation.
・Suitable
for half bridge light ballast Applications.
・Low
base drive requirement.
MJE13005DC
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
700
400
10
5
A
10
2
75
150
-55½150
A
W
℃
℃
UNIT
V
V
V
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Emitter Cut-off Current
DC Current Gain
SYMBOL
I
EBO
h
FE
(1)
h
FE
(2)
TEST CONDITION
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=2A
I
C
=1A, I
B
=0.2A
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=2A, I
B
=0.5A
I
C
=4A, I
B
=1A
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
Turn-On Time
Storage Time
Fall Time
Diode Forward Voltage
V
BE(sat)
C
ob
f
T
t
on
t
stg
t
f
V
F
I
F
=2A
I
F
=0.4A
*Reverse recovery tims (di/dt=10A/μ
S)
t
rr
I
F
=1A
I
F
=2A
*Pulse Test : Pulse Width = 5mS, Duty cycles≤10%
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
V
CB
=10V, f=1MHz
V
CE
=10V, I
C
=0.5A
MIN.
-
23
8
-
-
-
-
-
-
4
-
2
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
65
-
-
-
-
-
800
1.4
1.9
MAX.
10
35
-
0.5
0.6
1
1.2
V
1.6
-
-
0.15
5
0.8
1.6
-
-
-
pF
MHz
μ
S
μ
S
μ
S
V
nS
μ
S
μ
S
V
UNIT
μ
A
2015. 6. 09
Revision No : 1
1/4
MJE13005DC
REVERSE BIASED SAFE OPERATING AREA TEST CIRCUITS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter
junction reverse biased.
Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current.
This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse
biased turn-off.
This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
Figure 11 gives the complete RBSOA characteristics.
2015. 6. 09
Revision No : 1
4/4
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