SEMICONDUCTOR
MJE13005A(NPN)
RoHS
RoHS
Nell High Power Products
Switchmode Series NPN Silicon Power Transistors
(4A / 400V / 75W)
FEATURES
V
CEO(SUS)
≥
400V @ l
C
= 10 mA, l
B
= 0
V
CE(sat)
= 1.0V (Max.) @ l
C
= 4 A, l
B
= 1 A
Switching time - t
f
= 0.9
µs
(Max.) @ l
C
= 2 A
700V blocking capability
1
2
3
TO-220AB
(MJE13005A)
DESCRIPTION
These devices are designed for high-voltage,
high-speed power switching inductive circuits
where fall time is critical. They are particularly
suited for 115 and 220V SWITCHMODE
applications such as switching regulators,
inverters, motor controls, solenoid/relay drivers
and deflection circuits.
INTERNAL SCHEMATIC DIAGRAM
C (TAB)
(1)
B
(2)
E
(NPN)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
Derate above 25ºC
T
j
T
stg
T
L
Junction temperature
Storage temperature
Maximum lead temperature for soldering purposes:
1/16” from case for
≤ 10
seconds
0.6
150
ºC
-65 to 150
265
ºC
W/ºC
PARAMETER
Collector to base voltage (V
BE
= 0)
Collector to emitter voltage (I
B
= 0)
Emitter to base voltage
Collector current - continuous
Peak collector current (Note 1)
Base current - continuous
Peak base current (Note 1)
Emitter current - continuous
Peak emitter current (Note 1)
Total power dissipation
T
C
= 25°C
VALUE
700
400
9
4
8
2
A
4
6
12
75
W
V
UNIT
Note: 1. Pulse test : Pulse width = 5ms, duty cycle
≤
10%
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Page 1 of 6
SEMICONDUCTOR
MJE13005A( NPN )
RoHS
RoHS
Nell High Power Products
THERMAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
R
th(j-c)
R
th(j-a)
PARAMETER
Maximum thermal resistance, junction to case
Maximum thermal resistance, junction to ambient
VALUE
1.67
ºC/W
62.5.
UNIT
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
OFF CHARACTERISTICS
V
CE
= 700V, V
BE(off)
= 1.5V
I
CEV
Collector cutoff current
V
CE
= 700V, V
BE(off)
= 1.5V, T
C
= 100°C
I
CEO
I
EBO
V
CEO (SUS)
*
V
(BR)CEV
V
(BR)EBO
Collector cutoff current
Emitter cutoff current
Collector to emitter sustaining voltage
Collector to base breakdown voltage
Emitter to base breakdown voltage
V
CE
= 400V, l
B
= 0
V
EBO
= 9V, l
C
= 0
l
C
= 10mA, l
B
= 0
l
C
= 10mA, V
BE
= 0
l
E
= 10mA, l
C
= 0
400
700
9
V
5.0
mA
0.1
1.0
1.0
ON CHARACTERISTICS
Forward current transfer ratio
(DC current gain)
l
C
=
1A
, V
CE
= 5V
l
C
=
2A
, V
CE
= 5V
l
C
=
1A
, I
B
= 0.2A
l
C
= 2A, l
B
= 0.5A
V
CE(sat)*
Collector to emitter saturation voltage
l
C
= 4A, l
B
= 1A
I
C
= 2A, l
B
= 0.5A, T
C
= 100°C
l
C
=
1A
, I
B
= 0.2A
V
BE(on)*
Base to emitter on voltage
l
C
= 2A, l
B
= 0.5A
l
C
= 2A, l
B
= 0.5A, T
C
= 100°C
DYNAMIC CHARACTERISTICS
f
T
Transition frequency
(Current gain- Bandwidth product )
l
C
= 0.5A, V
CE
= 10V, f
test
= 1MHz
1.0
1.0
1.2
1.6
1.5
V
10
8
60
40
0.5
0.6
V
h
FE
4
MH
Z
C
ob
Output capacitance
V
CB
= 10V, l
E
= 0, f
test
= 0.1MHz
65
pF
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay time
Rise time
Storage time
Fall time
V
CC
=
125V
, I
C
= 2A
I
B1
= I
B2
=0.4A, t
p
= 25µs
duty clcye
≤1%
0.03
0.35
2.0
0.45
0.1
0.7
µs
4.0
0.9
*Pulsed
: Pulse duration = 300 µs, duty cycle
=
2%.
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Page 2 of 6
SEMICONDUCTOR
MJE13005A( NPN )
RoHS
RoHS
Nell High Power Products
Fig.1 DC current gain
Collector-Emitter saturation voltage
V
CE (sat)
100
70
T
J
= 150°C
Fig.2 V
CE(sat)
- I
B
characteristics (Typical)
2
T
J
= 25°C
Dc current gain, h
FE
50
25°C
1.6
l
C
= 1A
2A
3A
4A
30
20
-55°C
1.2
0.8
10
7
5
0.04 0.06
V
CE
= 2V
V
CE
= 5V
0.4
0.1
0.2
0.4 0.6
1
2
4
0
0.03
0.05
0.1
0.2 0.3
0.5 0.7 1
2
3
Collector current, I
C
(A)
Base current, I
B
(A)
Fig.3 V
BE
- I
C
characteristics (Typical)
Fig.4 V
CE(sat)
- I
C
characteristics (Typical)
Collector-emitter saturation voltage
v
CE(sat)
(V)
1.3
0.55
l
C
/ l
B
= 4
Base-Emitter voltage , V
BE
(V)
1.1
V
BE(sat)
@ l
C
/ l
B
= 4
V
BE(on)
@ V
CE
= 2V
0.45
T
J
= -55°C
25°C
0.9
T
J
= -55°C
25°C
0.35
0.7
25°C
0.25
0.5
150°C
0.15
150°C
0.3
0.04 0.06 0.1
0.2
0.4 0.6
1
2
4
0.05
0.04 0.06
0.1
0.2
0.4 0.6
1
2
4
Collector current, l
C
(A)
Collector current, l
C
(A)
Fig.5 Collector cutoff region
Fig.6 Capacitance
10K
V
CE
= 250V
2K
1K
700
500
300
200
100
70
50
30
0.6
20
0.3
0.5 1
3
5
10
30
50
100
C
ob
C
ib
Collector current , I
C
(µA)
T
J
= 150°C
100
125°C
100°C
10
75°C
50°C
25°C
1
0.1
-0.4
REVERSE
-0.2
0
FORWARD
0.2
0.4
Capacitance (pF)
1K
300
Base-Emitter voltage , V
BE
(V)
Reverse voltage, V
R
(V)
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Page 3 of 6
SEMICONDUCTOR
MJE13005A( NPN )
RoHS
RoHS
Nell High Power Products
Fig.7 Turn-On time
1
V
CC
= 125V
l
C
/ l
B
= 5
T
J
= 25°C
t
r
Fig.8 Turn-Off time
10
5
t
s
0.5
V
CC
= 125V
l
C
/ l
B
= 5
T
J
= 25°C
Time,t (µs)
0.2
0.1
0.05
Time,t (µs)
2
1
0.5
0.3
t
d
@ V
BE(off)
= 5V
t
f
0.02
0.01
0.04
0.2
0.1
0.04
0.1
0.2
0.4
1
2
4
0.1
0.2
0.5
1
2
4
Collector current , l
C
(A)
Collector current , l
C
(A)
Fig.9 Test conditions for dynamic performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+5V
V
CC
1N4933
33Ω
RESISTIVE
SWITCHING
MJE210
0.001
µF
1N4933
+125V
L
Mr826*
R
C
TEST CIRCUITS
5V
PW
1KΩ
33Ω
2N222
68Ω
1KΩ
R
B
l
C
V
clamp
R
B
*
SELECTED FOR
≥1kV
DUT
SCOPE
DUTY CYCLE
≤ 10%
t r
,t
f
≤ 10ns
l
B
+5V
1kΩ
5.1kΩ
51
Ω
V
CE
D1
1N4933
2N2905
0.02
µF
270Ω
MJE200
100Ω
T.U.T.
-4.0V
NOTE
PW and V
cc
Adjusted for Desired l
C
RB Adjusted for Desired l
B1
47Ω
½W
+5V
CIRCUIT
VALUES
Coil Data :
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
GAP for 200
µH
/ 20A
L
coil
= 200
µH
V
CC
= 20V
V
clamp
= 300 Vdc
V
CC
= 125V
R
C
= 62Ω
D1 = 1N5820 or Equiv.
R
B
= 22Ω
t
f
CLAMPED
+10V
t
1
ADJUSTED TO
OBTAIN l
C
L
COil
(l
C PK
)
V
CC
L
COil
(l
C PK
)
V
clamp
0
Test Equipment
Scope-Tektronics
475 or Equivalent
-8V
25
µs
TEST WAVEFORMS
l
C
l
C(pk)
t
f
UNCLAMPED
≈
t
2
t
t
1
V
CE
V
CE
or
V
clamp
t
TIME
t
2
t
f
t
1
≈
t
2
≈
t
r
, t
f
< 10
ns
Duty Cycle = 1.0%
R
B
and R
C
adjusted
for desired l
B
and l
C
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Page 4 of 6
SEMICONDUCTOR
MJE13005A( NPN )
RoHS
RoHS
Nell High Power Products
Fig.10 Typical thermal response
【
Z
th(j-c)
(t)
】
1
Transient thermal resistance
(Normalized)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
D = 0.5
0.2
0.1
P
(pk)
0.05
0.02
0.03
0.02
0.01
0.01 0.02
0.01
SINGLE PULSE
Z
th(j-c)(t)
= r(t) R
th(j-c)
R
th(j-c)
= 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(PK)
- T
C
= P
(pK)
Z
th(j-c)(t)
t
1
t
2
DUTY CYCLE, D =
t
1
/t
2
0.05
0.1
0.2
0.5
1
2
5
10
20 50
100 200
500
1K
time,t (ms)
Fig.11 Forward bias safe operating area
(FBSOA)
10
5
Fig.12 Reverse bias switching safe operating area
(RBSOA)
4
T
C
≤
100°C
Collector current , I
C
(A)
2
1
0.5
0.2
0.1
0.05
0.02
0.01
5
T
j
= 150°C
Bonding wire limited
5 ms
dc
500 µs
Collector current , I
C
(A)
l
B1
= 2.0A
3
1 ms
2
V
B1(off)
= 9V
Thermally limited
T
C
= 25°C (single pulse)
Second breardown limited
1
MJE13005A
5V
3V
1.5V
MJE13005A
0
7
10
20
30
50 70 100
200 300 500
0
100
200
300
400
500
600
700
800
Collector
-
Emitter voltage, V
CE
(V)
Collector
-
Emitter voltage, V
CE
(V)
FORWARD BIAS
There are two limitations on the power handling ability
of a transistor:average junction temperature and second
breakdown. Safe operating area curves indicate l
C
- V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Fig.11 is based on T
C
= 25°C ; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
C
≥
25°C. Second breakdown limitations
do not derate the same as thermal limitations. Allowable
current at the voltages shown on Fig.11 may be found at
any case temperature by using the appropriate curve on
Fig.13.
T
J(pk)
may be calculated from the data in Fig.10. At high
case temperatures, thermal limitations will reduce the
power that can be handled to values less than the
limitations mposed by second breakdown.
REVERSE BLAS
For inductive loads, high voltage and high current
must be sustained simultaneously during turn-off, in
most cases, with the base to emitter junction reverse
biased. Under these conditions the collector voltage
must be held to a safe level at or below a specific value
of collector current. This can be accomplished by several
means such as active clamping, RC snubbing, load line
shaping, etc. The safe level for these devices is specified
as Reverse Bias Safe Operating Area and repesents the
voltage-current conditions during reverse biased turn-off.
This rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Fig.12
gives the complete RBSOA characteristics.
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Page 5 of 6
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