O
ne,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212) 227-6005
FAX: (201) 376-8960
MJ8504
MJ8505
1 )«'**iyn«M--, I>iii;t Slu't'j
SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS
The MJ8504 and MJ8505 transistors are designed for high-
voltage, high-speed, power switching in inductive circuits where fall
time is critical. They are particularly suited for line operated switch-
mode applications such as:
•
•
•
•
•
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
1
10 AMPERE
NPN SILICON
POWER TRANSISTORS
700 and 800 VOLTS
176 WATTS
Designer's Data for
"Worst Case" Condition!
The Designers Data Sheer pn
mits the design of most circuit*
entirely from the information im-
sented Limit data - representing
device characteristics boundaries
are given to facilitate "worst cav
design
Fast Turn-Off Times
75 ns Inductive Fall Time -25°C (typ)
150 ns Inductive Crossover Time -25°C (typ)
1. 25Ais Inductive Storage Time -25°C (typ)
Operating Temperature Range —65 to + 200°C
100°C Performance Specified for:
Reverse-Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
•
j_
MAXIMUM RATINGS
r
^
rC
r~'~i
\
^4-°
i
r—
F
^--i
Symbol
VCEOIsusI
MJ8S04
MJ8SOS
Unit
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
Peak (1 1
Base Current - Continuous
Peak It)
Total Power Dissipation @ T
c
- 25°C
@ T
C
- 100°C
Derate above 25°C
.
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
VCEV
VEB
'CM
IB
IBM
P
°
Tj,T«
9
700
800
1200
1400
8.0
8.0
10
10
15
15
8
8
12
12
175
175
100
100
1.0
1.0
-65 to +200
Vdc
Vdc
Vdc
Adc
Adc
watts
NOTES
2. [T]lSSE TING PLANE AND DATUM
3 POSIT ION A TOLERANCE FOR
MOUNTING HOLE Q
*>
|1
1.0.D05I© | T
V©j
FQR LEAD
i~f [~l.l IO.OM1©T
V® j 0 ® |
W/°C
°C
BN 1, IASE
i
4 DIMENSIONS AND TOLERANCES PER
ANSI V M S 1973.
DIM
1
-
MILLIMETERS
WIN MAX
}1,W
-
INCHES
MIN MAX
DUO
EMiTTfii
T " F ~76T T5bO" ~OOT
O
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
(1 1 Pulse Test: Pulse Width - 5 ms. Duty Cycle
<
10%.
Symbol
R
9
JC
T
L
Max
1.0
275
Unit
°C/W
°C
E
F
6
-J-
-
i«
.
M.tSBSC
10.91 BSC
iiSSlc
-
1.136
l.tl/BSC
nqUBSC
nMSBSC'"
_j. .ijija Jii|- !|ig ^ig-
R
U
V
-
4.13
3.11
W.61
-
t.OS5~
S.33 0,190 D.210
4.19 0,150 0.16$
TO-3
Quality Semi-Conductors
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212) 227-6005
FAX: (201) 376-8960
ELECTRICAL CHARACTERISTICS <T
C
• 2S°C
unkw othtrwiu noted)
L
Characnrittic
OFF CHARACTERISTICS
Collector. Emitter Sustaining Voltage (Table 1 )
( > C - 100mA. 1
B
-01
MJ8504
MJ8505
Symbol
700
800
-
-
-
-
-
-
-
-
-
-
-
-
Vdc
v
CEO(sus(
Collector Cutoff Current
<
V
CEV *
R
"
ed
Value. V
B
E(
o
ff 1 - ' 5 Vdc)
(VCEV -Rated Value. V
BE(o(()
- 1.5 Vdc. TC - 150°CI
Collector Cutoff Current
'CEV
0.25
mAdc
5.0
5.0
1.0
IV
CE
- Rated V
CEV
. RBE • so n. T
C
- ioo°cl
Emitter Cutoff Current
(V
EB
- 7.0
Vdc.
l
c
- 0)
ICER
IEBO
mAdc
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with Base Reverse Biased
ON CHARACTERISTICS (1)
DC Current Gain
(l
C
=1.SAdc, VcE'S.OVdc)
Collector-Emitter Saturation Voltage
(l
c
= 5.0Adc. IB -2-OAdc)
(l
c
- 10Adc. IB -4.0 Adc)
(I
C
- 5.0 Adc. I
B
« 2.0 Adc, T
C
- 100°C)
Base-Emitter Saturation Voltage
(l
c
- 6.0 Adc. I
B
- 2.0 Adcl
(l
c
- 5.0 Adc, I
B
- 2.0 Adc. T
C
- 100°C)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 vdc. IE -0. f
t
est - 1.0 kmi
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1 )
Storage Time
Crossover Time
Storage Time
Crossover Time
Fall Tim>
v
BE<off)
•s/b
RBSOA
7.5
See Figure 12
See Figure 13
—
—
"
"FE
v
CE(satl
Vde
-
-
2.0
5.0
3.0
v
BE(sat|
Vdc
-
-
1.5
1.5
450
pF
C
0
b
90
-
(V
C C
-SOOVdc, I
C
«5.0A,
Duty Cycle < 2.0%)
d
-
-
-
-
0.060
020
2.0
40
2.0
5.5
2.0
-
Ml
MS
MS
US
0.175
1.25
0.60
1.75
0.400
(l
c
- 5.0 Alpkl, V
c
|
amp
- 500 Vdc. Ifll - 2.0 A.
VBE(off|-SVdc.T
C
-100
0
C
V
MS
MS
MS
VI
MS
c
V
-
-
1.25
0.1 SO
' 5 Vdc. T
C
- 25°C)
c
«fi
-
-
0.075
(1) Pulse Test: PW 300 vs. Duty Cycle
f, 1%,
Quality Semi-Conductors
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