,
Li
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MEDIUM-POWER COMPLEMENTARY
SILICON TRANSISTORS
...designed for use as output devices in complementary general purpose
amplifier applications.
FEATURES:
* High Gain Darlington Performance
* DC Current Gain hFE = 3500(Typ)
Q
l
c
= 10 A
* Monolithic Construction with Built-in Base-Emitter Shunt Resistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
PNP
MJ4030
MJ4031
MJ4032
NPN
MJ4033
MJ4034
MJ4035
MAXIMUM RATINGS
16 AMPERE
COMPLEMENTARY
SILICON POWER
DARLINGTON TRANSISTOR
60-100 VOLTS
150 WATTS
MJ4032
MJ4036
100
100
Characteristic
Collector-Emitter Voltage
COIIector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current
Total Power Dissipation @T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
lc
'CM
IB
PD
MJ4030
MJ4033
60
60
MJ4031
MJ4034
80
80
5.0
16
20
0.5
150
0.857
Unit
V
V
V
A
TO-3
A
W
W/°C
°C
T
J '
T
STQ
- 65 to +200
K E
Characteristic
Thermal Resistance Junction to Case
Symbol
Rajc
Max
Unit
1.17
°c/w
PIN 1.BASE
2.EMHTER
COUECTOR<CASE)
FIGURE -1 POWER DERATING
150
!125
MOO
75
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
MIN
38.75
19.28
7.96
11.18
25.20
0.92
1.38
29.90
16.64
3.88
10.67
MAX
39.96
22.23
9.28
12.19
26.67
1.09
1.62
30.40
17.30
4.36
11.18
50
26
25
50
75
100 125 150
T
c
, TEMPERATXJRE('C)
175
200
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at (he time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJ4030, MJ4031, MJ4032 PNP / MJ4033, MJ4034, MJ4035 NPN
ELECTRICAL CHARACTERISTICS ( T
c
= 25*C
unless otherwise noted )
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
( l
c
- 100 mA, I
B
- 0 )
MJ4030.MJ4033
MJ4031.MJ4034
MJ4032.MJ4035
MJ4030.MJ4033
MJ4031.MJ4034
MJ4032.MJ4035
\r^*f\m+*mj
*CEO(HH)
Symbol
Min
Max
Unit
V
60
80
100
mA
3.0
3.0
3.0
mA
1.0
1.0
1.0
5.0
5.0
5.0
mA
5.0
Collector Cutoff Current
( V
ci
= 30 V, I. = 0 )
(V
ci
= 4QV, l. = 0)
( V
ci
= 50 V, I, = 0 )
'CEO
Collector-Emitter Leakage Current
( V
cl
= 60 V, RU = 1.0k ohm )
MJ4030.MJ4033
(V
c
, = 80V, R
M
" 1.0k ohm)
MJ4031.MJ4034
( V
w
= 100V, R
M
= 1.0k ohm )
MJ4032.MJ4035
(V
M
= 60V, R
M
= 1.0k ohm, T
C
=1SO°C) MJ4030.MJ4033
( V
c<
= 80 V, R
M
« 1.0k ohm , T
e
= 150°C ) MJ4031.MJ4034
( V
c
, = 100 V, R
M
- 1.0k ohm ,T
C
= 150°C ) MJ4O32.MJ4035
Emitter Cutoff Current
(V
EB
= 5.0V,I
C
=0 )
ON CHARACTERISTICS
(1)
DC Current Gain
(I
C
=10A,V
CE
= 3.0V)
Collector-Emitter Saturation Voltage
(l
c
=10A,l
B
= 40mA)
(l
c
=16A,l
B
=80mA)
Base-Emitter On Voltage
(I
C
*10A,V
CE
= 3.0V)
(1) Pulse Test Pulse width - 300 us, Duty Cycle £ 2.0%
ICER
loo
hFE
1000
Vcs,^
V
2.5
4.0
V
3.0
Wo
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