20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MJ16018
MJH16018
10 AMPERE
1.5 kV SWITCHMODE III SERIES
NPN SILICON POWER TRANSISTORS
These transistors are designed for high-voltage, high-speed,
power switching in inductive circuits where fall time is critical.
They are particularly suited for line-operated switchmode appli-
cations.
• Switching
Regulators
• Inverters
• Solenoids
• Relay Driven
• Motor Controls
• Deflection
Circuits
Typical Applications: Features:
• Collector-Emitter Voltage —
VCEX = 1500 Vdc
• Fast Turn-Off Times
280 ns Inductive Fall Time 100'C (Typ)
470 ns Inductive Crossover Time- 100°C (Typ)
2.6
>a
Inductive Storage Time - 100°C (Typ)
• 100°C Performance Specified for:
Reverse-Biased SOA with
Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
NPN SILICON
POWER TRANSISTORS
800 VOLTS
150 AND 175 WATTS
MJ16018
STYLE I
PIN I. IA«
Z
CASE
EMITTER
COLLECTOR
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
— Continuous
— Peakd)
Base Current
— Continuous
— Peak 111
Total Device Dissipation
@ TC = 25°C
@ TC = 100°C
Derate above 25"C
Operating and Storage
Junction Temperature
Range
f*f.-
r
-
r
ti .Ijilr
Symbol
VCEO(SUS)
VCEX
MJ16018
MJH16018
Unit
NOTES
DIMENSIONS 0 AND V ARE DATUMS
I. IT] IS SEATING PLANE AND DATUM,
3 POSITIONAL TOLERANCE FOfl
MOUNTtNG HOLE 0:
[ + | t-1] (0.0051
®~\~1
j v @ |
800
1500
6.0
10
15
I
Vdc
Vdc
I OIHENSIONSAND TOLERANCES PER
VEB
ic
ICM
IB
IBM
Vdc
Adc
TO-204AA
(TO-3TVPB
Adc
8.0
12
Watts
MJH1M18
150
50
1.0
-55 to 160
PD
175
100
1.0
-66 to 200
TjJstg
wrc
•c
THERMAL CHARACTERISTICS
wmcnrmic
Thermal Resistance.
Junction to Case
Lead Temperature for
Soldering Purposes. 1/8*
from Case for 5 Seconds.
Symbol
Max
1.0
Unit
"we
TL
1.0
275
°C/W
°c
II) Pulu T«t: Pull* Width « 5.0 |is. Duty Cycle > 10%.
Dsslpisr's Dm tor "Worst Can" CondHtom
Tlw DnlgiMr'i Datl Sheet permits th« dulgn of most circuiti intinily from ttx infornwtion
. Urn* Cunns — raptseenting boundanes on devies characteristics — in given to
i «woif^ MM design.
TO-21MC
Qualify Semi-Conductors
ne.
,O
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MJ16018, MJH16018
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJ16018
MJH1G018
ELECTRICAL CHARACTERISTICS (T
c
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 2)
(I
C
= 100 mA, I
B
= 0)
Collector Cutoff Current
(V
C
EV = ISOOVdc, VflEloff) = 1.5 Vdc)
<VCEV = 1500 Vdc, VBE(off) - '-5 Vdc, TC = 100°C)
Collector Cutoff Current
v
CEO(sus)
Symbol
Min
800
TVP
-
Mw
—
Untt
Vdc
!
CEV
mAdc
-
-
—
—
0.25
1.5
'CER
—
—
2.5
1.0
mAdc
mAdc
(VCE = isoo Vdc, RBE = BO n, TC = ioo°ci
Emitter Cutoff Current
(VEB = 6.0 Vdc, i
c
= o)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
(1C = 5.0
Adc,
IB = 1.0
Adc)
dC - 10
Adc,
IB = 4.0
Adc)
(1C = 6.0 Adc. IB = 1.0 Adc. TC = 100"C)
Base-Emitter Saturation Voltage
dc = 5.0
Adc,
IB - 1.0
Adc)
dc = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
DC Current Gain
(1C = 5.0
Adc,
VCE = 5 0
Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
!
EBO
IS/b
Se
9 Figure 12
Se
B Figure 13
RBSOA
VcE(sat)
-
v
BE(sat)
Vdc
_
1.5
1.5
2.0
Vdc
-
-
—
1.5
1.5
—
—
"FE
7.0
(v
CB
- 10 vdc, IE = o, f
tesl
= 1.0 kHz)
SWITCHING CHARACTERISTICS
RMiithr* Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Inductive Lead (Table
^^
Storage Time
Fall Time
Crossover Time
Storage Time
Fall Time
Crossover Time
(II PulM T«it: PW ~ 300 jd. Duty Cycll «• 2.0%.
(l
c
= 5.0
Adc,
I
B
1 = 1.0
Adc,
VBEIoff) - 2.0 Vdc,
VCE(pk) - «00 Vdc)
dC = 5.0
Adc,
Vcc = 250
Vdc,
!
B1
= 1.0
Adc,
PW = 30 us,
Duty Cycle « 2.0%)
(102
= 2.0
Adc,
Cob
—
—
400
Pf
<d
RBZ = 3.o ni
t
r
's
tf
(VgE(off) ~ 2 0 Vdc)
ts
tf
—
—
—
—
_
—
—
—
—
—
_
50
300
100
400
ns
2000
900
1600
3000
1200
2400
650
500
t
S
v
2000
200
350
3000
400
500
ns
(Tj = 25°C)
tfi
tc
<sv
2600
280
470
3600
460
620
(Tj = 100«C)
Ifi
<c
-
Quality Semi-Conductors
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
