C^
CI.
E.IIS.I
io
aucti, One.
TELEPHONE: (973) 376-2922
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
SWITCHMODE SERIES
NPN
SILICON POWER TRANSISTORS
These transistors are designed for high-voltage,high-speed, power
switching in inductive circuits where fell time is cirtical. They are par-
ticularly suited for line-operated switch mode applicaCons.The MJ16008
is a selected hihg-gain version of the MJ 16006 for applications where
drive current is limited
Typical Applications:
* Switching Regulators
(212)227-6005
FAX: (973) 376-8960
NPN
MJ 16006
MJ16008
* Inverters
* Solenoid and Relay Drives
* Motor Controls
8 AMPERE
SILICON POWER
TRANSISTORS
450 VOLTS
150 WATTS
* Deflection Circuits
Features:
* Fast Turn-Off Times
* Operating Temperature Range - 65 to+200°C
* 100°C Performance Specified for:
Reverse-Biased SOA With Inductive Loads
Switching Times With Inductive Loads
Saturation Voltages
Leakage Currents
TO-3
MAXIMUM RATINGS
B
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
-Peak
Base Current-Continuous
-Peak
Total Power Dissipation
@T
C
=25°C
@T
C
=100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
V
CEV
VEBO
MJ16006
450
850
6
MJ16008
450
850
Unit
V
V
_l
** J
i
-r*
^——s , ,— 1>-
II
D
I_
!"
H
I
J
V
A
^
v
-^,-2\
^
,
'
K
|
1
>
E
'c
ICM
'B
IBM
PD
8
16
6
12
A
A
PIN 1.BASE
2.EHKTTER
COLLECTOR(CASE)
W
150
85.5
0.86
DIM
MILLIMETERS
M!N
MAX
W/°C
°C
Tj |T
STO
-65 to +200
THERMAL CHARACTERISTICS
A
B
C
D
E
F
G
H
I
J
Characteristic
Thermal ResistanceJunction to Case
Symbol
Rejc
Max
1.17
Unit
K
38.75
19.28
7.98
11.18
25.20
0.92
1.38
29.90
16.64
3.88
10.67
39.96
2223
9.28
12.19
26.67
1.09
1.62
30.40
17.30
4.36
11.18
°c/w
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJ16006, MJ16008 NPN
ELECTRICAL CHARACTERISTICS
( T
c
= 25'C
unless otherwise noted )
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltag«(1)
( lo- 100mA, I,- 0)
Collector Cutoff Current
(V
CE
= 850 V ,
^BHaHT
1
-
5 V
)
(V^ 850 V , V
B
^
off)
= 1 .5 V,T
C
= 100°C )
Collector Cutoff Current
(VCE- 850 V, R
BE
= 50 a ,T
C
= 100°C )
Emitter Cutoff Current
(Ve^e-OV, l
c
=0)
ON CHARACTERISTICS (1)
DC Current Gain
( l
c
= 8.0 A,^* 5.0 V )
Collector-Emitter Saturation Voltage
(I
C
=3.0A,I
B
=0.4A)
(I
C
=5.0AJ
B
=0.66A)
(I
C
=3.0A,I
B
=0.3A)
(I
C
=5.0A,I
B
»0.5A)
Base-Emitter Saturation Voltage
( l
c
= 5.0 A, I
B
= 0.66 A )
(I
C
=5.0A,I
B
=0.5A)
DYNAMIC CHARACTERISTICS
Output Capacitance
( V
CB
= 10V, I
E
= 0, f = 1.0 KHz )
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
=250V, I
C
=5A
R
BE
=4Q
PyY=30us
Duty Cycle g 2%
Cob
pF
350
Symbol
Min
Max
Unit
V
CE
o«-,
ICEV
V
450
mA
0.25
1.5
mA
25
mA
1.0
ICER
<EBO
MJ 16006
MJ16008
MJ16006
MJ16006
MJ16008
MJ16008
MJ16006
MJ16008
hFE
5,0
7.0
V
2.5
3.0
2.5
3.0
V
1.5
1.5
VCE,-,,
VBEC«>
ig^^o.eeA
MJ 16006
IB^-I^ 0.50A
MJ 16008
*d
*r
100
250
ns
ns
ns
ns
t«
tf
2500
300
(1) Pulse Test: Pulse Width ^ 300 us, Duty Cycle S 2%
FIGURE -1 POWER DERATING
I
1
125
\
X N
N
| 50
I 25
\0
2
5
5
0
T
0
. TEMPeWURECC)
微控制器 MCU
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