SEMICONDUCTOR
MJ15003(NPN)
RoHS
MJ15004(PNP)
RoHS
Nell High Power Products
Complementary Silicon power transistors
(20A / 140V / 250W)
26.00 Max.
13.10 Max.
8.60
1.60
TAB
1
10.90
Φ1.00
2
TO-3
FEATURES
Designed for general-purpose switching and amplifier
applications.
DC current gain-h
FE
= 25 (Min) @ l
C
= 5 Adc
High safe operation area (100% tested) 250W @ 50V
For low distortion complementary designs
16.85
1
2
2-
Φ
4.0 Thru.
All dimensions in millimeters
INTERNAL SCHEMATIC DIAGRAM
C (TAB)
(1)
B
(2)
E
MJ15003(NPN)
E
MJ15004(PNP)
(1)
B
(2)
C (TAB)
DESCRIPTION
The
MJ15003
is a silicon epitaxial-base planar
NPN transistor mounted in JEDEC TO-3 metal
case.
lt is designed for high power audio, disk head
positioners and other linear applications.
The complementary PNP type is
MJ15004.
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
I
E
P
D
Derate above 25ºC
T
j
T
stg
T
L
Junction temperature
Storage temperature
Maximum lead temperature for soldering purposes :
1/16” from case for
≤ 10
seconds
1.43
200
ºC
-65 to 200
265
ºC
W/ºC
PARAMETER
Collector to base voltage (I
E
= 0)
Collector to emitter voltage (I
B
= 0)
Emitter to base voltage
Collector current - continuous
Base current - continuous
Emitter current - continuous
Total power dissipation
T
C
= 25°C
VALUE
140
140
5
20
5
25
250
W
A
dc
V
dc
UNIT
*For
PNP types voltage and current values are negative.
THERMAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
R
th(j-c)
PARAMETER
Thermal resistance, junction to case
VALUE
0.7
UNIT
ºC/W
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Page 1 of 4
Φ20.00 Max.
38.50
30.00
SEMICONDUCTOR
MJ15003(NPN)
RoHS
MJ15004(PNP)
RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
I
CEX
PARAMETER
CONDITIONS
V
CE
= 140V, V
BE(off)
= 1.5V
Collector cutoff current
V
CE
= 140V, V
BE(off)
= 1.5V, T
C
= 150°C
I
CEO
I
EBO
V
CEO (SUS)
*
V
CBO
V
EBO
h
FE
V
CE(sat)
*
V
BE(on)
*
Collector cutoff current
Emitter cutoff current
Collector to emitter sustaining voltage
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio (DC current gain)
Collector to emitter saturation voltage
Base to emitter on voltage
Transition frequency
(current gain - bandwidth product )
V
CE
= 140V, l
B
= 0
V
EBO
= 5V, l
C
= 0
l
C
= 200mA, l
B
= 0
l
E
=
0
l
C
=
0
l
C
=
5A
, V
CE
= 2V
l
C
= 5A, l
B
= 0.5A
l
C
= 5A, V
CE
= 2V
l
C
= 0.5A, V
CE
= 10V, f
test
= 0.5MH
Z
2.0
140
140
5
25
150
1.0
V
2.0
V
2.0
250
µ
A
MIN
MAX
100
µ
A
mA
100
f
T
MH
Z
C
ob
Output capacitance
V
CB
= 10V, I
E
= 0, f
test
= 1MHz
V
CE
= 50V, t = 1s, non-repetitive
V
CE
= 100V, t = 1s, non-repetitive
5
1000
pF
l
s/b
*
Second breakdown collector current with base
forward baised
A
1
*Pulsed
: Pulse duration = 300 µs, duty cycle 2%.
*For
PNP types voltage and current values are negative.
Fig.1 Power derating
400
P
D
, Power dissipation, (W)
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
200
T
C
, Case temperature (°C)
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Page 2 of 4
SEMICONDUCTOR
MJ15003(NPN)
RoHS
MJ15004(PNP)
RoHS
Nell High Power Products
Fig.2 Active region safe operating area
20
15
10
7
5
3
2
1
0.7
0.5
0.3
0.2
2
3
5
7
10
20
30
50 70 100 150 200
T
J
= 200°C
Bonding wire limited
Thermal limitation (single pulse)
Second breakdown limited
curves apply below rated V
CEO
T
C
= 25°C
l
C
, Collector current, (A)
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate l
C
-V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of fig.2 is based on T
J(pk)
= 200°C; T
C
is variable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
V
CE
, Collector-emitter voltage (V)
Fig.3 DC Current gain
MJ15003(NPN)
500
300
V
CE
= 2.0V
T
J
= 100°C
MJ15004(PNP)
300
200
T
J
= 100°C
T
J
= 25°C
V
CE
= 2.0V
DC current gain, h
FE
DC current gain, h
FE
5
200
100
70
50
30
20
T
J
= 25°C
100
70
50
20
10
7
5
0.2 0.3
0.5
1
2
5
7
10
20
10
7
5
0.2 0.3
0.5
1
2
7
10
20
l
C
, Collector current (Amp)
l
C
, Collector current (Amp)
Fig.4 “ON” Characteristics
MJ15003(NPN)
2.0
2.0
MJ15004(PNP)
1.6
1.6
Voltage, V (Volts)
1.2
V
BE
@ V
CE
= 2V
Voltage, V (Volts)
1.2
V
BE
@ V
CE
= 2V
0.8
T
J
= 25°C
T
J
= 100°C
T
J
= 25°C
0.8
T
J
= 25°C
T
J
= 100°C
T
J
= 25°C
0.4
T
J
= 100°C
V
CE(sat)
@ l
C
/l
B
= 10
0.4
T
J
= 100°C
V
CE(sat)
@ l
C
/l
B
= 10
0
0.2 0.3
0.5
1
2
5
7
10
20
0
0.2 0.3
0.5
1
2
5
7
10
20
Collector current, l
C
(Amp)
Collector current, l
C
(Amp)
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Page 3 of 4
SEMICONDUCTOR
MJ15003(NPN)
RoHS
MJ15004(PNP)
RoHS
Nell High Power Products
Fig.5 Capacitances
2000
1000
MJ15003(NPN)
MJ15004(PNP)
Fig.6 Transiton frequency
(Current Gain-Bandwidth product)
10
Transition frequency, f
T
(MHz)
9
8
7
6
5
4
3
2
1
0
0.1
0.2
0.5
1.0
2.0 3.0
MJ15003(NPN)
MJ15004(PNP)
T
J
= 25°C
V
CE
= 10V
f
test
= 0.5MHz
Capacitance, C (pF)
500
C
ib
C
ob
200
100
50
T
C
= 25°C
20
0.1
0.2
0.5
10
20
50
100
5.0
10
Reverse voltage, V
R
(Volts)
Collector current, l
C
(Amp)
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Page 4 of 4
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