na..
,
U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switchmode applications.
• Switching regulators
• Inverters
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25"C)
SYMBOL
VCEV
VCEO
VEBO
Ic
ICM
IB
IBM
PC
Tj
Tstg
MJ13334
•-tj
VALUE
750
450
6
20
30
10
15
175
200
PIN I.BASE
I.
ByllTTER
3. COLLECT OR (CASE)
TO-3 package
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation@T
c
=25'C
Junction Temperature
Storage Temperature
UNIT
V
V
V
A
A
A
A
W
IT
T~
\l / j
t—^_
TL ^
t
Vj ^X
'u
13B
DM
A
B
D
E
1
G
F
K
^
L
N
4
U
V
r
L
L
-N-1
—,
1
-*IU— D 2 PL
1t
C
v-.
h— u—*t
p-L-^
P
:
A
CT
t
B
C
1
I
nun
MAX
MM
3900
26.67
25.30
11.10
9.30
090
1.10
2.90
3.10
•c
•c
-65-200
c
THERMAL CHARACTERISTICS
SYMBOL
R
ttl
10.92
546
11.40
13.50
1675
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.0
UNIT
19.40
4.00
j-C
°c/w
17.05
1962
420
30.00
4.30
30.20
450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice, Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25'C
unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain-Bandwidth Product
Output Capacitance
CONDITIONS
l
c
=100mA; I
B
=0
lc= 10A; I
B
=2A
lc=10A;l
B
=2A,T
c
=100'C
lc= 20A; I
B
=6.7A
l
c
= 10A; I
B
=2A
lc=10A;l
B
=2A,Tc=100
-
C
V
C
Ev=450V;V
B
E(off)=1.5V
V
C
Ev=450V;V
B
E(off)=1 .5V;T
C
=150'C
VCE= 450V; R
BE
= 50 Q ,T
C
= 1 00"C
VEB= 6V; l
c
=0
lc= 5A ; VCE= 5V
lc= 0.3A ;V
G
E= 10V; f
test
=1MHz
lE=0;VcB=10V
;
f
test
=1kHz
10
5
125
MIN
450
MJ13334
TYP.
MAX
UNIT
V
VcEO(SUS)
Vc£(sat)-1
1.8
2.4
5
V
V
V
mA
mA
mA
VcE(sat)-2
Ve£(sat)
1.8
1.8
0.25
5.0
5.0
1
60
40
500
ICEV
ICER
IEBO
hFE
fr
COB
MHz
PF
Switching times;Resistive Load
td
tr
Delay Time
Rise Time
Storage Time
Fall Time
lc=10A, V
CC
=250V; I
B
1=2A
Duty CyclesS2.0%
0.02
0.1
0.7
4.0
0.7
u
s
l-i
S
0.3
1.6
0.3
ts
V S
tf
\i S
FPGA/CPLD
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