tSztnL-donauctoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, O
ne.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VcEO(sus) = 350V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCEV
VCEO
VEBO
Ic
ICM
IB
IBM
PC
Tj
T
stg
MJ13332
3
I
1
PIN 1.BASE
f
2. EMITTER
^\. COLLECT OR (CASE)
2
TO-3 package
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation@T
c
=25'C
Junction Temperature
Storage Temperature
VALUE
650
350
6
20
30
10
15
175
200
UNIT
V
V
V
A
A
A
A
W
°C
t-E
r-
N
-I
•
_J—
|
-*IU
— D
2 PL
I
C
:
i
;
\
-I3EI
1
. f
Ci
1
B
jfr-5
_$
M
t
V-_
/
M3
a
DIM
A
B
C
D
E
' I
nun
MM
MAX
3900
2i
5.30 26.67
i
J.30
(
)90
2
!.90
11.10
110
3.10
-65-200
°c
JL
H
K
L
N
Q
U
V
10.92
546
1
.40
N
5.75
1
3.40
4.00
THERMAL CHARACTERISTICS
SYMBOL
R(h j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.0
UNIT
"C/W
13.50
17.05
19.62
420
3
DiQQ
«.30
30.20
450_
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors entourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25'C unless otherwise specified
SYMBOL
VcEO(SUS)
MJ13332
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current Gain-Bandwidth Product
Output Capacitance
CONDITIONS
l
c
=100mA;l
B
=0
I
C
=10A;I
B
=1-5A
lc=10A; I
B
=1.8A,T
C
=100'C
lc= 20A; I
B
= 5A
lc= 10A; I
B
= 1.5A
lc=10A;lB=1.8A,Tc=100'C
V
CE
v=450V;V
B
E(off)=1.5V
VcEv=450V;V
BE
(off)=1 .5V;T
C
=1 50"C
V
CE
= 450V; R
BE
= 50 Q ,T
C
= 100'C
MIN
350
TYP.
MAX
UNIT
V
1.5
2.5
3.5
1.8
1.8
0.25
5.0
5.0
0.5
V
V
V
mA
mA
mA
VcE(sat)-1
VcE(sat)-2
VeE(sat)
ICEV
ICER
IEBO
V
EB
= 6V; l
c
=0
hpE-i
lc= 5A ; VCE= 5V
15
8
5
100
75
hFE-2
lc=10A; V
C
E=5V
ft
COB
I
G
= 0.3A ;V
CE
= 10V; f
tes
t=1MHz
40
400
I
E
= 0; V
CB
= 10V; f
tes
t=100kHz
PF
Switching times;Resistive Load
td
tr
Delay Time
Rise Time
Storage Time
Fall Time
lc=10A, Vcc=175V; I
B1
=1.5A
\/o,-,
tn—
tA/' t — ^fi n c-
0.08
0.55
0.7
0.11
0.2
1.0
3.5
0.7
us
us
us
us
ts
Duty Cycle ^2.0%
tf
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