C/
(l£ii£ii ^Etnl-CondiKitoi t-Pioaucti, Una.
LS
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
..designed for use as output devices in complementary general
purpose amplifier applications.
FEATURES:
* High Gain Darlington Performance
* High DC Current Gain hFE = 1000(Min) @ l
c
= 20 A
* Monolithic Construction with Built-in Base-Emitter Shunt Resistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
PNP
NPN
MJ11011 MJ11012
MJ11013 MJ11014
MJ11015 MJ11016
30 AMPERE
COMPLEMENTARY
SILICON POWER
DARLINGTON TRANSISTOR
MAXIMUM RATINGS
60-120 VOLTS
200 WATTS
Characteristic
Collector-Emitter Voltage
COIIector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current
Total Power Dissipation ©T
c
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Symbol
MJ11011 MJ11013 MJ1101S
MJ11012 MJ11014 MJ11016
60
60
90
90
5.0
30
50
1.0
200
1.15
Unit
V
V
V
A
VCEO
VCBO
VEBO
'c
'CM
IB
PD
120
120
TO-3
^
A
W
W/°C
°C
.-H— 1
..
Hi
F
j
,—iJ
~\
Tj i^STO
- 65 to +200
X
Characteristic
Thermal Resistance Junction to Case
Symbol
Rejc
Max
0.87
Unit
/tti~]
E
I ii
,. /
—
^
* *.
.. ...i
A
°c/w
PIN 1 BASE
Z.EMfTTER
COLLECTOR(CASE)
FIGURE -1 POWER DERATING
200
t 175
|l50
§125
I
1
°°
5 75
I ^
' 25
25
50
75
100
125
150
XN
ni
u
LSI
vi
MILLIMETERS
MIN
MAX
N
^\
'x
V
N.
\
175 200
A
B
C
D
E
F
G
H
I
J
K
38.75
19.28
796
11.18
25.20
0.92
1.38
29.90
16.64
3.88
10.67
39.96
22.23
9.23
12.19
26.67
1.09
1.62
30.40
17.30
4.36
11.18
T
C
,TEMPERATURE('C)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Qualify Semi-Conductors
MJ11011, MJ11013, MJ11015 PNP / MJ11012, MJ11014, MJ11016 NPN
ELECTRICAL CHARACTERISTICS ( T
c
= 25
°C
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
(l
c
=100mA.I
B
= 0)
MJ1 101 1,MJ1 1012
MJ1 101 3.MJ1 1014
MJ11015.MJ11016
V
CE<X«us)
unless othenMse noted )
Symbol
Min
Max
Unit
V
60
90
120
mA
1.0
mA
1.0
1.0
1.0
5.0
5.0
5.0
mA
5.0
Collector Cutoff Current
(V
CB
= 50V, l = 0.0)
.
Collector-Emitter Leakage Current
(V
el
= 60V,R
M
=1.0k ohm )
(V
ei
= 90V,R
M
=1.0k ohm )
( V = 1 2 0 V , R
i B
= 1.0k ohm )
( V = 60 V,R = 1.0k ohm ,T
e
= 125°C )
(V
es
= 90V,R
iI
=1.0kohm,T
e
=125°C)
(V
eB
= 120 V,R,
B
= 1.0k ohm,T
e
=125°C )
Emitter Cutoff Current
(V
EB
= 5.0V,I
C
=0 )
ON CHARACTERISTICS
(1)
DC Current Gain
(I
C
= 20A,V
CS
= 5.0V)
(I
C
=30A,V
C1
= 5.0V)
Collector-Emitter Saturation Voltage
(l
c
= 20A,l. = 200mA)
(l
c
= 30AI. = 300mA)
Base-Emitter Saturation Voltage
( l
c
= 20 A, I = 200 mA )
,
{ l
c
= 30 A, I, = 300 mA ) )
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(l
c
= 10A,V
ce
= 3.0V,f =1.0 MHz)
(1) Pulse Test Pulse width - 300 us , Duty Cycle ^ 2.0%
(2)f
T
= n,. -In
MJ1 101 1.MJ1 1012
MJ11013.MJ11014
MJ11015.MJ11016
MJ1 101 1.MJ1 1012
MJ11013.MJ11014
MJ11015,MJ11016
ICEO
'CER
IEBO
hFE
1000
200
VCE,-*
V
3.0
4.0
V
3.5
5.0
V
BE(«D
M
4.0
INTERNAL SCHEMATIC DIAGRAM
NPN
MJ11011
MJ11013
MJ11015
Co 11 act e»f
PNP
MJ11012
MJ11014
MJ11016
编程基础
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