^E.m.i-L.onauctoi U-^i
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line,
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Designer's™ Data Sheet
SWITCH MODE Series
NPN Silicon Power Darlington
Transistors with Base-Emitter
Speedup Diode
The MJ10022 and MJ10023 Darlington transistors are designed for high-voltage,
high-speed, power switching in inductive circuits where fall time is critical. They are
particularly suited for line-operated switchmode applications such as:
AC and DC Motor Controls
Switching Regulators
Inverters
Solenoid and Relay Drivers
Fast Turn-Off Times
150 ns Inductive Fall Time @ 25°C (Typ)
300 ns Inductive Storage Time @ 25°C (Typ)
• Operating Temperature Range - 65 to + 200°C
• 100°C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
Total Power Dissipation @ TC = 25°C
@Tc = 100°C
Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
Symbol
Max
0.7
275
MJ10O22
MJ10023
40 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
350 AND 400 VOLTS
250 WATTS
(TO-3)
= 100
Symbol
V
CEO
MJ10022
350
450
80
40
80
20
40
250
143
1.43
MJ 10023
400
600
Unit
Vdc
Vdc
Vdc
Adc
Adc
VCEV
VEB
'c
'CM
IB
IBM
PD
Watts
W/°C
°C
Tj, T
st
g
-65 to +200
Unit
°C/W
Rejc
TL
°c
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Seini-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJ1OO22 MJ10O23
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1 )
(IC = 100mA, I
B
= 0)
Collector Cutoff Current
(VCEV = Rated Value, VeE(off) =
1
-5 Vdc)
(VCEV =
Rat
ed Value, VBE(off) =
1
-5 Vdc, TC = 150°C)
Collector Cutoff Current
MJ 10022
MJ10023
v
CEO(sus)
Symbol
Min
Typ
Max
Unit
350
400
—
—
Vdc
mAdc
!CEV
—
ICER
—
—
—
0.25
5.0
5.0
175
mAdc
mAdc
(VCE = Rated VCEV
R
BE =
50
".
T
c = ioo°c)
Emitter Cutoff Current
(V
EB
= 2.0 V, I
C
= 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
ON CHARACTERISTICS (1)
DC Current Gain
'EBO
—
—
'S/b
RBSOA
See Figure 13
See Figure 14
h
FE
v
CE(sat)
50
—
600
—
Vdc
(ic = lOAdc, VCE = s.ov)
Collector-Emitter Saturation Voltage
(l
c
= 20Adc, IB = LOAdc)
(IC = 40 Adc, IB = 5.0 Adc)
(I
C
= 20 Adc, IB = 10 Adc, T
C
= 100°C)
Base-Emitter Saturation Voltage
(IC = 20 Adc, IB = 1 .2 Adc)
(IC = 20Adc, IB = 1.2 Adc, TC = 100°C)
Diode Forward Voltage
(Ip = 20 Adc)
DYNAMIC CHARACTERISTICS
Output Capacitance
—
—
v
BE(sat)
2.2
5.0
2.5
Vdc
2.5
2.5
5.0
Vdc
—
Vf
—
—
2.5
(VCB = 10 vdc, IE = o, f
tes
t = 1 .0 kHz)
SWITCHING
CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
(1) Pulse Test: PW = 300 us, Duty Cycle <s 2%.
(ICM - 20 A, V
CEM
= 250 V, I
B
1 - 1 .0 A,
VBE(off) = 5V,T
C
= 100°C)
Cob
150
—
600
PF
td
(Vcc = 250 Vdc, Ic = 20 A, IBI = 1 .0 Adc,
v
BE(off)
3iU v
' *p
ou
M
s
'
Duty Cycle < 2.0%)
t
r
ts
tf
—
—
—
—
—
—
—
—
—
—
0.03
0.4
0.9
0.3
0.2
1.2
2.5
0.9
,
us
us
US
(IS
tsv
tc
1.9
0.6
0.3
1.0
0.3
0.15
4.4
2.0
—
—
—
—
US
us
us
us
US
us
tfi
(ICM - 20 A, VCEM - 250 v, IBI - 1 .0 A,
V
B
E(off)
=
5V,Tc = 25°C)
tsv
tc
tfi
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