^zmi-Gonauckot ^Pioaucti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA
TELEPHONE: (973) 376-2922
(212)227-6005
FAX- f9731 376-8960
Designer's™ Data Sheet
SWITCHMODE Series
NPN Silicon Power Darlington
Transistors with Base-Emitter
Speedup Diode
The MJ10020 and MJ10021 Darlington transistors are designed for high-voltage,
high-speed, power switching in inductive circuits where fall time is critical. They are
particularly suited for line operated switchmode applications such as:
AC and DC Motor Controls
Switching Regulators
Inverters
Solenoid and Relay Drivers
Fast Turn-Off Times
150 ns Inductive Fall Time at 25°C (Typ)
750 ns Inductive Storage Time at 25°C (Typ)
• Operating Temperature Range -65 to +200°C
= 100
15
• 100°C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
Total Power Dissipation @ TC = 25°C
@TC = 100°C
Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes:
1/8" from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle s 10%.
Symbol
Symbol
MJ10020
MJ10020
MJ10021
60 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
200 AND 250 VOLTS
250 WATTS
TO-204AE (TO-3)
MJ10021
Unit
VCEO
VCEV
200
300
8.0
60
100
20
30
250
143
1.43
l~~
-65 to +200
250
350
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
VEB
ic
'CM
IB
IBM
PD
TJ, T
stg
°c
Unit
Max
0.7
275
Rejc
°c/w
TL
°c
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
MJ10020 MJ10021
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Table 1)
(IC = 100mA, IB = 0)
Collector Cutoff Current
(VcEV =
Rat
ed Value, V
B
E(off) = 1-5 Vdc)
(VcEV =
Rat
ed Value, VsE(off) =
1
-
5vdc
.
T
C = 150°C)
Collector Cutoff Current
MJ 10020
MJ10021
VcEO(sus)
'CEV
—
!
CER
Symbol
Min
Typ
Max
Unit
200
250
—
—
Vdc
mAdc
—
—
—
0.25
5.0
5.0
175
mAdc
mAdc
—
—
(VCE = Rated V
C
EV RBE = so n, T
C
= ioo°o
Emitter Cutoff Current
(V
EB
= 2.0 V, I
C
= 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with Base Reverse Biased
ON CHARACTERISTICS (1)
DC Current Gain
(lc = 1 5 Adc, VCE = 5.0V)
Collector-Emitter Saturation Voltage
(IC = 30Adc, I
B
= 1.2 Adc)
(IC = 60 Adc, IB = 4.0 Adc)
(IC = 30 Adc, IB = 1 -2 Adc, TC = 100°C)
Base-Emitter Saturation Voltage
(IC = 30 Adc, IB = 1 .2 Adc)
(IC = 30 Adc, IB = 1 2 Adc, TC = 100°C)
Diode Forward Voltage
(Ip = 30 Adc)
DYNAMIC CHARACTERISTICS
Output Capacitance
hFE
v
CE(sat)
!
EBO
"S/b
RBSOA
See Figure 13
See Figure 14
75
—
1000
—
Vdc
—
—
v
BE(sat)
—
—
2.2
4.0
2.4
Vdc
—
—
—
—
2.5
3.0
3.5
5.0
Vf
—
Vdc
(VCB = 10 vdc, i
E
= o, f
test
= 1 .0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Storage Time
Crossover Time
Fall Time
(1) Pulse Test: PW = 300 us, Duty Cycle < 2%.
(Vcc = 1/5 Vdc, lc = 30A,
Duty Cycle < 2.0%).
Cob
175
—
700
PF
td
tr
ts
tf
—
—
—
—
—
—
—
—
—
0.02
0.30
1.0
0.07
0.2
1.0
3.5
0.5
US
US
us
us
i
CM
= so A(
P
k), VCEM = 200 v, i
B
i = 1 .2 A,
V
B
E(off) = 5V,T
C
= 100°C)
tsv
*c
tsv
1.2
0.45
0.75
0.25
0.15
3.5
2.0
—
_
—
US
US
us
|is
us
(ICM - 30 A(pk), VCEM - 200 v, IBI - 1 .2 A,
VBE(off) = 5 V, T
C
= 25°C)
t
c
tfi