., U
na.
SWITCHMODE SERIES
NPN
SILICON POWER DARLINGTON TRANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE
The MJ10008 and MJ10009 darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line oper
-ated switch-mode applications such as:
FEATURES:
'Continuous Collector Current - l
c
= 20 A
'Switching Regulators
•Inverters
'Solenoid and Relay Driven
•Motor Controls
MAXIMUM RATINGS
NPN
MJ10008
MJ10009
20 AMPERE
POWER DARLINGTON
TRANSISTORS
400-500 VOLTS
175 WATTS
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base current
Total Power Dissipation <ST
C
=25°C
©T
c
= 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Symbol
V
CEV
V
CEX{305)
MJ10008
650
450
450
8.0
MJ10009
700
500
500
Unit
V
V
V
V
A
TO-3
B
C
D
V
CEO(SU3)
V
EBO
•c
'CM
IB
20
30
2.5
A
PD
Tj '"^STQ
175
100
1.0
W
W
W/°C
°C
k
H
^
^
-65 to +200
j
A
V
^2
^
>
H
^x
*/
A
1
^
'K E
•(*
h
i^
^
Characteristic
Thermal Resistance Junction to Case
Symbol
R8JC
Max
1.0
Unit
°c/w
PIN l.BASE
2.EMITTER
COLLECTOR<CASE)
FIGURE -1 POWER DERATING
200
HIM
MILLIMETERS
MIN
S?
175
|150
1 125
|
100
§ 75
K
MAX
39.96
22.23
9.28
1Z19
26.67
1.06
1.62
30.40
17.30
436
11.18
\
X^
\
A
B
C
0
X^
1 50
* 25
x^
\
\
175
200
E
F
G
H
1
J
K
*«,
25
50
75
100 125 150
T
c
, TEMPCRATURE('C)
38.75
19.26
7.96
11.18
25.20
0.92
1.38
29.90
16.64
3.88
10.67
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJ10008, MJ10009,
NPN
ELECTRICAL CHARACTERISTICS ( T
c
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage
(l
c
= 100mA,l
B
= 0 , V
c |
= R a t e V
C E O
)
Collector Cutoff Current
( V
CE
= Rated ^^.R^SO ohm,T
c
=100°C)
Collector Cutoff Current
(
V
CEV= Rat""
Value
.
V
BE<oFFf
1
-
5
V )
( V
CEV
= Rated Value,V
BE(0|!F)
=1.5 V, T
C
=100°C)
Emitter Cutoff Current
( V
EB
= 2.0 V , l
c
* 0 )
ON
CHARACTERISTICS
(1)
DC Current Gain
(I
C
= 5.0A,V
CE
= 5.0V)
(I
C
=10A,V
C E
= 5.0V)
Collector - Emitter Saturation Voltage
(l
e
=10A,l
B
= 500mA)
( l
c
= 20 A, I
B
~
2.0 A )
( l
c
= 10 A, I
B
= 500 mA,T
c
=100°C )
Base - Emitter Saturation Voltage
(l
c
=10A,l
B
=500mA)
( l
c
= 10 A, IB =500 mA, T
C
=100°C )
Diode Forward Voltage
( I
F
= 10 A)
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain(2)
( l
c
= 1.0 A, VCE = 10 V, f = 1.0 MHz )
Output Capacitance
0/^=10 V, I
E
=0, f =100
kHz
)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(1) Pulse Test: Pulse width = 300 us , Duty Cyde 5 2.0%
(2)f
T
- l
h
r.| •'•-
)/£,. = 2SQV,
I
C
= 10A
I^SOOmAVB^S-OV
tp = 50us,Duty Cyde
<
2%
*d
<r
= 25"C unless otherwise noted )
Symbol
Min
Max
Unit
MJ10008
MJ10009
v
CEO<sus)
450
500
5.0
0.25
5.0
175
V
mA
CER
'cEV
mA
mA
IEBO
hFE
40
30
V
CE,-«
400
300
V
2.0
3.5
2.5
V
v-«
2.5
2.5
V
5.0
^
\*«
8.0
pF
100
c*
0.25
1.5
2.0
0.6
us
us
us
us
*»
tf
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