^E.mi-Condu<itoi ^Pioduch,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973)
376-8960
MJ10000
Designer's™ Data Sheet
SWITCHMODE Series
NPN Silicon Power Darlington
Transistor
The MJ10000 Darlington transistor is designed for high-voltage, high-speed,
power switching in inductive circuits where fall time is critical. It is particularly suited
for line operated switchmode applications such as:
•
•
•
•
•
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
20 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
350 VOLTS
175 WATTS
100°C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times With Inductive Loads —
210 ns Inductive Fall Time (Typ)
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
— Peak(1)
Base Current — Continuous
— Peak(1)
Total Power Dissipation @ TC = 25°C
@T
C
=100°C
Derate above 25° C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
£
10%.
Symbol
Max
1
275
(TO-3)
Symbol
V
CEO
Value
350
400
450
8
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
VCEX
V
CEV
V
EB
"c
'CM
20
30
2.5
5
175
100
1
IB
!BM
PD
Watts
W/°C
°C
T
J.
T
stg
-65 to +200
Unit
ROJC
TL
°c/w
°c
NJ Semi-Conductorsreservesthe right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJ100OO
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS (2)
Collector-Emitter Sustaining Voltage (Table 1)
(I
C
= 250 mA, IB = 0, V
damp
= Rated V
C
EO>
Collector-Emitter Sustaining Voltage (Table 1, Figure 12)
IC = 2 A, V
c
|
arnp
= Rated VCEX. TC = 100°C
IC = 10 A, V
c
|
amp
= Rated VCEX.
T
C =
100
°
c
Collector Cutoff Current
(VCEV = Rated Value, V
BE
(off) = 1-5 Vdc)
(VCEV = Ra'ed Value, V
B
E(off) =
1
-
5 vdc
.
T
C = 150°C)
Collector Cutoff Current
v
CEO(sus)
Symbol
Min
Typ
Max
Unit
Vdc
350
_
—
Vdc
400
275
—
—
MJ10000
VCEX(sus)
MJ10000
MJ10000
!
CEV
mAdc
—
—
—
0.25
5
5
<VCE = Rated VCEV.
R
BE = so n, T
C
= ioo°c)
Emitter Cutoff Current
(V
EB
= 8 Vdc, I
C
= 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 5 Adc, V
CE
= 5 Vdc)
(IC = 10AdC, VCE = 5 Vdc)
Collector-Emitter Saturation Voltage
(IC = 10Adc, IB = 400 mAdc)
(IC = 20 Adc, IB = 1 Adc)
(IC = 10Adc, IB = 400 mAdc, T
C
= 100°C)
Base-Emitter Saturation Voltage
(\ =
10 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 400 mAdc, T
c
= 100°C)
Diode Forward Voltage (1)
(lp = 10 Adc)
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain
(IC = 1 .0 Adc, VCE = 10 Vdc, ft
est
= 1 MHz)
Output Capacitance
(V
C
B = 10 Vdc, I
E
= 0, ftest = 100 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1 )
Delay Time
Rise Time
Storage Time
Fall Time
(Vcc = 250 Vdc, Ic = 1 0 A,
Ig-) = 400 mA, VBE(off) ~ 5 Vdc, tp = 50 us,
Duty Cycle < 2%)
'CER
—
mAdc
mAdc
IEBO
—
—
150
!
S/b
See Figure 11
Adc
hFE
50
40
v
CE(sat)
—
—
—
600
400
Vdc
,
—
—
1.9
3
2
Vdc
—
—
^
—
3
2.5
2.5
5
v
BE(sat)
Vf
—
Vdc
hfe
Cob
10
100
—
325
—
PF
»d
V
*s
tf
—
0.12
0.20
1.5
1.1
0.2
0.6
3.5
2.4
us
us
us
us
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Storage Time
Crossover Time
(Ic = 10 A(pk), V
C
|
amp
= Rated VCEX. 'B1
=
400
mA
.
v
BE(off)
= 5 vdc
.
T
c = 100°C)
(Ic = 10 A(pk), V
C
|
amp
= Rated VCEX. 'B1 =
4
00 mA,
VeE(off)
= 5vd
°.
T
C
=
25°C)
tsv
tc
tsv
tc
—
—
3.5
1.5
1.0
0.7
5.5
3.7
—
us
us
us
us
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