MA4SW210B-1
MA4SW310B-1
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Features
♦
♦
♦
♦
♦
♦
♦
♦
Broad Bandwidth Specified 2 to 18 GHz
Usable up to 26 GHz
Integrated Bias Network
Low Insertion Loss / High Isolation
Fully Monolithic Construction
Glass Encapsulate
Polymer Protective Coating
RoHS Compliant
Rev. V4
MA4SW210B-1
Description
The MA4SW210B-1 and MA4SW310B-1
devices are SP2T and SP3T broadband
switches with an integrated bias networks
utilizing
M/A-COM Technology Solutions
TM
HMIC (Heterolithic
Microwave Integrated
Circuit) process, US Patent 5,268,310. This
process allows the incorporation of silicon
pedestals that form series and shunt diodes or
vias by imbedding them in low loss, low
dispersion glass. By using small spacing
between circuit
elements, this combination
of silicon and glass gives HMIC devices low
loss and high isolation performance with
exceptional repeatability through low millimeter
frequencies.
Large bond pads facilitate the use of low
inductance ribbon bonds, while full area, gold,
backside metallization allows for manual or
automatic chip bonding via 80Au/20Sn solders
or electrically conductive silver epoxy.
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Applied Reverse Voltage
RF C.W. Incident Power
Bias Current +25°C
Absolute Maximum
-65
o
C to +125
o
C
-65
o
C to +150
o
C
+175
o
C
- 50V
+30dBm C.W.
± 20mA
MA4SW310B-1
Yellow areas indicate bond pads
Max. operating conditions for a combination of
RF power, D.C. bias and temperature:
+30dBm CW @ 15mA (per diode) @+85°C
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MA4SW210B-1
MA4SW310B-1
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
MA4SW210B-1 (SPDT)
Electrical Specifications @ T
AMB
= +25
o
C, 20mA Bias current
Rev. V4
Parameter
Frequency
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
Minimum
Nominal
1.5
0.70
0.90
1.2
Maximum
1.8
1.0
1.2
1.8
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
Insertion Loss
55
47
40
36
60
50
45
40
14
15
15
13.0
50
Isolation
6 GHz
12 GHz
18 GHz
2 GHz
Input Return
Loss
Switching Speed
1
6 GHz
12 GHz
18 GHz
-
MA4SW310B-1 (SP3T)
Electrical Specifications @ T
AMB
= +25
o
C, 20mA Bias current
Parameter
Frequency
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
-
Minimum
Nominal
1.6
0.8
1.0
1.3
59
50
45
40
14
15
16
14
50
Maximum
2.0
1.1
1.3
1.9
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
Insertion Loss
Isolation
54
47
40
36
Input Return Loss
Switching Speed
1
Note:
1. Typical switching speed measured from 10% to 90% of detected RF signal driven by TTL compatible drivers using RC
output spiking network, R = 50 – 200Ω , C = 390 – 560pF.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MA4SW210B-1
MA4SW310B-1
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Typical RF Performance at T
AMB
= +25°C, 20mA Bias Current
ISOLATION vs FREQUENCY
MA4SW210B-1
Rev. V4
ISOLATION vs FREQUENCY
MA4SW310B-1
0
ISOLATION, dB
0
2
4
6
8 10 12 14 16 18 20 22 24 26
ISOLATION, dB
0
-10
-20
-30
-40
-50
-60
-70
-10
-20
-30
-40
-50
-60
-70
0
2
4
6
8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
FREQUENCY, GHz
INSERTION LOSS vs FREQUENCY
MA4SW310B-1
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
0
2
4
6
8 10 12 14 16 18 20 22 24 26
INSERTION LOSS vs FREQUENCY
MA4SW210-B1
INSERTION LOSS, dB
2
0
-2
-4
-6
-8
0
2
4
6
8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
INSERTION LOSS, dB
FREQUENCY, GHz
RETURN LOSS vs FREQUENCY
MA4SW210B-1
0
RETURN LOSS vs FREQUENCY
MA4SW310B-1
0
RETURN LOSS, dB
RETURN LOSS, dB
-5
-10
-15
-20
-25
-30
-35
-40
0
2
4
6
8
10
12
14
16
18
20
22
24
26
-5
-10
-15
-20
-25
-30
-35
-40
0
2
4
6
8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
FREQUENCY, GHz
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MA4SW210B-1
MA4SW310B-1
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
MA4SW210B-1 Series Diode Junction Temperature vs. Incident Power at 8 GHz
140
5 mA
120
Rev. V4
Series Diode_5mA
Series Diode_10mA
Series Diode_20mA
Series Diode_40mA
10 m A
Tjunction ( Deg. C )
100
80
20
60
40
40 m A
20
10.00
15.00
20.00
25.00
30.00
35.00
C.W. Incident Power ( dBm )
MA4SW210B-1 Compression Power vs. Incident Power at 8 GHz
0.80
Series Diode_5mA
0.70
Series Diode_10mA
Series Diode_20mA
Series Diode_40mA
5 mA
Compression Power ( dB )
0.60
0.50
10 mA
0.40
0.30
2 0 mA
0.20
4 0 mA
0.10
0.00
10.00
15.00
20.00
25.00
30.00
35.00
C.W. Incident Power ( dBm )
Note:
The MA4SW310B-1 contains the same PIN diodes and will have similar performance.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
MA4SW210B-1
MA4SW310B-1
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Operation of the MA4SW 210B-1 and MA4SW310B-1
Operation of the MA4SW210B-1 and MA4SW310B-1 PIN diode switches is achieved by simultaneous
application of DC currents to the bias pads. The required levels for the different states are shown in the tables
below. The control currents should be supplied by constant current sources. The nominal 40Ω - 60Ω pull-up
resistor voltage @ J4 and J5 is usually -1V for –20mA and +20mA for +1V.
Rev. V4
Driver Connections MA4SW210B-1
Condition
of
RF Output
J1 - J2
Low Loss
Isolation
Condition
of
RF Output
J1 - J3
Isolation
Low Loss
J5
Driver Connections MA4SW310B-1
Control Level
I
DC
@
J6
J7
Condition Condition Condition
of
of
of
RF Output RF Output RF Output
J1 - J2
Low Loss
Isolation
Isolation
J1 - J3
Isolation
Low Loss
Isolation
J1 - J4
Isolation
Isolation
Low Loss
Control Level
I
DC
@
J4
-20mA
+20mA
J5
+20mA
-20mA
-20mA +20mA +20mA
+20 mA -20mA
+20mA +20mA
+20mA
-20mA
Equivalent Circuit MA4SW210B-1
Equivalent Circuit MA4SW310B-1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
