MA4SW110
MA4SW210
MA4SW310
HMIC™ Silicon PIN Diode Switches
RoHS Compliant
Features
♦
♦
♦
♦
♦
♦
♦
♦
Broad Bandwidth
Specified from 50 MHz to 20 GHz
Usable from 50 MHz to 26.5 GHz
Lower Insertion Loss and Higher Isolation than
Comparable pHEMT/Discrete Component Designs
Rugged Design Fully Monolithic
Glass Encapsulated Chip with Polymer Protective
Coating
Up to +30dBm C.W. Power Handling @ +25°C
50 nS Switching Speed
V8
J1
J2
MA4SW110
Description
The MA4SW110, MA4SW210 and MA4SW310 are
series-shunt, broadband, PIN diode switches made with
M/A-COM Tech’s HMIC
TM
(Heterolithic Microwave
Integrated Circuit) process. This process allows the
silicon pedestals which form the series - shunt diodes
and vias to be embedded into low loss, low dispersion
glass. By also incorporating small spacing between
circuit elements, the result is an HMIC chip with low
insertion loss and high isolation at frequencies up to
26.5GHz. They are designed for use as moderate
power, high performance switches and provide superior
performance when compared to similar designs that use
discrete components.
The top side of the chip is protected by a polymer
coating for manual or automatic handling and large gold
bond pads help facilitate connection of low inductance
ribbons. The gold metallization on the backside of the
chip allows for attachment via 80/20, gold/tin solder or
conductive silver epoxy.
J3
MA4SW210
J2
J3
J1
Absolute Maximum Ratings
T
AMB
= +25°C ( Unless Otherwise Specified )
MA4SW310
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Applied Reverse Voltage
RF C.W. Incident Power
Bias Current Per Port
Absolute Maximum
-65
o
C to +125
o
C
-65
o
C to +150
o
C
+175
o
C
- 50V
+30dBm C.W.
± 50mA
J1
J2
J4
Max. operating conditions for a combination of
RF power, D.C. bias and temperature:
+30dBm CW @ 15mA (per diode) @+85°C
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
information contained herein without notice.
MA4SW110
MA4SW210
MA4SW310
HMIC™ Silicon PIN Diode Switches
RoHS Compliant
MA4SW110 (SPST)
Electrical Specifications @ T
A
= +25
o
C, 20mA
Parameter
Frequency
Minimum
Insertion Loss
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
-
-
1GHz
-
-
-
46
39
34
22
15
14
-
-
-
V8
Nominal
0.4
0.5
0.7
55
47
42
31
33
27
20
-
0.2
Maximum
0.7
0.9
1.2
-
-
-
-
-
-
-
50
-
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
V
dB
Isolation
Input Return Loss
Switching Speed
1
Voltage Rating
2
Signal Compression (500mW)
MA4SW210 (SPDT)
Electrical Specifications @ T
A
= +25
o
C, 20mA
Parameter
Insertion Loss
1.) Typical Switching Speed measured from 10 % to 90 % of
detected RF signal driven by TTL compatible drivers.
2.) Maximum reverse leakage current in either the shunt or
series PIN diodes shall be 10µA maximum at -50 volts.
Frequency
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
-
-
1GHz
Minimum
-
-
-
48
40
34
20
18
15
-
-
-
Nominal
0.4
0.5
0.7
63
50
42
27
25
25
20
-
0.2
Maximum
0.7
1.0
1.2
-
-
-
-
-
-
-
50
-
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
V
dB
Isolation
Input Return Loss
Switching Speed
1
Voltage Rating
2
Signal Compression (500mW)
MA4SW310 (SP3T)
Electrical Specifications @ T
A
= +25
o
C, 20mA
Parameter
Insertion Loss
1.) Typical Switching Speed measured from 10 % to 90 % of
detected RF signal driven by TTL compatible drivers.
2.) Maximum reverse leakage current in either the shunt or
series PIN diodes shall be 10µA maximum at -50 volts.
Frequency
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
6GHz
13GHz
20GHz
-
-
1GHz
Minimum
-
-
-
49
42
33
20
14
11
-
-
-
Nominal
0.5
0.7
0.9
57
48
42
24
22
21
20
-
0.2
Maximum
0.8
1.1
1.5
-
-
-
-
-
-
-
50
-
Isolation
Input Return Loss
Switching Speed
1
Voltage Rating
2
Signal Compression (500mW)
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
V
dB
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
information contained herein without notice.
MA4SW110
MA4SW210
MA4SW310
HMIC™ Silicon PIN Diode Switches
RoHS Compliant
Typical Performance Curves at T
A
= +25°C, 20mA Bias Current
MA4SW110
RETURN LOSS vs. FREQUENCY
-10
-15
LOSS (dB)
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0
5
10
15
20
FREQUENCY (GHz)
25
30
V8
MASW110
INSERTION LOSS vs. FREQUENCY
Output Return Loss
-20
-25
-30
-35
0
5
10
15
20
25
30
FREQUENCY (GHz)
Input Return Loss
LOSS (dB
)
MA4SW210
MA4SW210
-10
-15
LOSS (dB)
INSERTION LOSS vs. FREQUENCY
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0
5
10
15
20
25
30
FREQUENCY (GHz)
-20
-25
-30
-35
0
5
Output Return Loss
Input Return Loss
10
15
20
25
30
FREQUENCY (GHz)
LOSS (dB)
MA4SW310
MA4SW310
-10
-15
Output Return Loss
INSERTION LOSS vs. FREQUENCY
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
-1.1
-1.2
0
5
10
15
20
25
30
FREQUENCY (GHz)
LOSS (dB
)
-20
-25
-30
0
5
10
15
20
25
30
FREQUENCY (GHz)
Input Return Loss
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
LOSS (dB)
information contained herein without notice.
MA4SW110
MA4SW210
MA4SW310
HMIC™ Silicon PIN Diode Switches
RoHS Compliant
Typical Performance Curves @ TA = +25°C, 20mA Bias Current
MA4SW110
ISOLATION vs. FREQUENCY
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
0
5
10
15
20
25
30
FREQUENCY (GHz)
-0.35
-0.4
-0.45
-0.5
-0.55
-0.6
-0.65
-0.7
0
5
10
15
20
25
30
35
CURRENT (mA)
LOSS (dB)
V8
INPUT RETURN LOSS vs. BIAS CURRENT @ 10 GHz
-22
-24
-26
-28
-30
-32
-34
0
5
10
15
MA4SW310
MA4SW210
ISOLATION (dB)
MA4SW110
20 25 30 35
CURRENT (mA)
40
45
50
55
INSERTION LOSS vs. BIAS CURRENT @ 10 GHz
MA4SW210
MA4SW110
MA4SW310
MA4SW210
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
0
5
10
15
20
25
30
FREQUENCY (GHz)
LOSS (dB)
ISOLATION (dB)
LOSS (dB)
ISOLATION vs. FREQUENCY
40
45
50
55
OUTPUT RETURN LOSS vs. BIAS CURRENT@ 10 GHz
-21.5
-22
-22.5
-23
-23.5
-24
-24.5
-25
-25.5
0
5
10
15
20
25
30
35
CURRENT (mA)
MA4SW310
ISOLATION vs. FREQUENCY
MA4SW110
MA4SW310
MA4SW210
40
45
50
55
ISOLATION (dB)
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
0
5
10
15
20
25
30
FREQUENCY (GHz)
ISOLATION (dB)
ISOLATION vs. BIAS CURRENT @ 10 GHz
-46
-47
-48
-49
-50
-51
-52
-53
-54
0
5
10
15
M
MA4SW110
MA4SW210
MA4SW310
20 25 30 35
CURRENT (mA)
40
45
50
55
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
information contained herein without notice.
MA4SW110
MA4SW210
MA4SW310
HMIC™ Silicon PIN Diode Switches
RoHS Compliant
Operation of the MA4SW Series Switches
The simultaneous application of a negative DC current to the
low loss port and positive DC current to the isolated port is
required for proper operation of the MA4SW series of PIN
switches. The backside area of the die is the RF and DC
ground return and the DC return is through the common Port
J1. A constant current source should be used to supply the
DC control currents. The control voltages at these points will
not exceed ±1.5 volts for supply currents up to + 20mA. In
the low loss state, the series diode must be forward biased
and the shunt diode reverse biased. On all isolated ports, the
shunt diode is forward biased and the series diode is reverse
biased.
MA4SW110 and Bias Connections
1
J1
RF INPUT
V8
20pF
20nH
20pF
100Ω
20nH
J2 BIAS
20pF
20pF
Switch
Chip
J2
RF OUTPUT
Driver Connections and Drivers
MA4SW110
DC Control Current
J2
-20mA
+20mA
RF Output State
J1-J2
Low Loss
Isolation
20nH
20pF
J3
RF OUTPUT
20pF
J3 BIAS
MA4SW210 and Bias Connections
1
J1 RF INPUT
20pF
20nH
J2 BIAS
100Ω
20pF
20nH
20pF
Compatible M/A-COM Tech Driver
MADR-007097-000100
MA4SW210
DC Control Current
J2
-20mA
+20mA
J3
+20mA
-20mA
RF Output State
J1-J2
Low Loss
Isolation
RF Output State
J1-J3
Isolation
Low Loss
J4 BIAS
Switch
Chip
20pF
J2
RF OUTPUT
MA4SW310 and Bias Connections
1
J1 RF INPUT
20pF
20nH
20pF
20nH
20pF
J2 BIAS
Compatible M/A-COM Tech Driver
MADR-007097-000100
100Ω
20nH
20pF
MA4SW310
DC Control Current
J2
J3
J4
+20mA
+20mA
-20mA
RF Output RF Output RF Output
State
State
State
J1-J2
Low Loss
Isolation
Isolation
J1-J3
Isolation
Low Loss
Isolation
J1-J4
Isolation
Isolation
Low Loss
20pF
20pF
J4
RF OUTPUT
20pF
J2
RF OUTPUT
20nH
J3 BIAS
20pF
-20mA +20mA
+20mA -20mA
+20mA +20mA
J3
RF OUTPUT
Compatible M/A-COM Tech Driver
MADR-009190-000100
Notes:
1.
RLC values are for an operation frequency of 2-18GHz and bias
current of ± 20mA per port..
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
information contained herein without notice.
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