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MA4SPS420

产品描述SURMOUNTTM PIN Diodes
文件大小207KB,共7页
制造商MACOM
官网地址http://www.macom.com
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MA4SPS420概述

SURMOUNTTM PIN Diodes

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MA4SPS42X Series
SURMOUNT
TM
PIN Diodes
MA4SPS421, MA4SPS422
MA4SPS421
Features








Surface Mount
No Wire Bonding Required
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polymer Scratch Protection
Low Parasitic Capacitance and Inductance
Higher Average and Peak Power Handling
RoHS Compliant* and 260º Reflow Compatible
Rev. V7
MA4SPS422
Description
This device is a Silicon-Glass PIN diode chip
fabricated with M/A-COM Technology Solutions
patented HMIC
TM
process. This device features two
silicon pedestals embedded in a low loss, low dis-
persion glass. The diode is formed on the top of one
pedestal and connections to the backside of the
device are facilitated by making the pedestal side-
walls electrically conductive. Selective backside
metallization is applied producing a surface mount
device. This vertical topology provides for
exceptional heat transfer. The topside is fully
encapsulated with silicon nitride and has an
additional polymer layer for scratch and impact
protection. These protective coatings prevent
damage to the junction and the anode air-bridge
during handling and assembly.
1. Backside metal: 0.1 µM thick.
2. Yellow hatched areas indicate backside ohmic gold
contacts.
3. All devices have the same outline dimensions (A to G).
DIM
A
B
C
D
E
F
G
INCHES
MIN.
0.040
0.021
0.004
0.013
0.011
0.013
0.019
MAX.
0.042
0.023
0.008
0.015
0.013
0.015
0.021
MIN.
1.025
0.525
0.102
0.325
0.275
0.325
0.475
MM
MAX.
1.075
0.575
0.203
0.375
0.325
0.375
0.525
Applications
These surmount devices are suitable for usage in
moderate incident power (10W C.W.) or higher
incident peak power (500W) series, shunt, or
series-shunt switches. Lower parasitic inductance,
0.1 to 0.2nH, and excellent RC constant (0.45pS),
make the devices ideal for higher frequency switch
elements compared to their plastic device
counterparts.
Absolute Maximum Ratings @ T
A
= 25°C
(unless otherwise specified)
Parameter
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Dissipated Power
( RF & DC )
Mounting Temperature
Absolute Maximum
250mA
-200V
-55°C to +125°C
-55°C to +150°C
+175°C
1.8W
+280°C for 30 seconds
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
India
Tel: +91.80.43537383
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

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