SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and DC-DC
Converter Applications.
FEATURES
・V
DSS
=30V, I
D
=6A.
・Drain-Source
ON Resistance.
R
DS(ON)
=28mΩ (Max.) @V
GS
=10V
R
DS(ON)
=42mΩ (Max.) @V
GS
=4.5V
・Super
High Dense Cell Design
・High
Power and Current Handing Capability
1
8
KMB6D0DN30QB
Dual N-Ch Trench MOSFET
H
T
D
P
G
U
L
A
5
B1 B2
4
DIM
A
B1
B2
D
G
H
L
P
T
U
MILLIMETERS
_
4.85 + 0.2
_
3.94 + 0.2
_
6.02 + 0.3
_ 0.1
0.4 +
0.15+0.1/-0.05
_
1.63 + 0.2
_
0.65 + 0.2
1.27
0.20+0.1/-0.05
0.1 MAX
MAXIMUM RATING
(Ta=25℃ Unless otherwise noted)
CHARACTERISTIC
Drain Source Voltage
Gate Source Voltage
DC
Drain Current
Pulsed
Drain Source Diode Forward Current
Drain Power Dissipation
25℃
I
DP
I
S
P
D
*
T
j
T
stg
R
thJA
*
30
1.7
2
150
-50~150
62.5
A
A
W
℃
℃
℃/W
SYMBOL
V
DSS
V
GSS
I
D
*
PATING
30
±20
6
UNIT
V
V
A
FLP-8
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note> *Surface Mounted on FR4 Board, t≤10sec.
KMB6D0DN
30QB
PIN CONNECTION (TOP VIEW)
S1
G1
S2
G2
1
8
D1
D1
D2
D2
1
8
7
6
5
2
7
2
3
3
6
4
5
4
2011. 8. 30
Revision No : 0
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KMB6D0DN30QB
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
UNLESS OTHERWISE NOTED
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Drain-Source ON Resistance
On-State Drain Current
Forward Transconductance
Dynamic
Input Capacitance
Ouput Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
*
I
DR
=1.7A, V
GS
=0V
-
0.75
1.2
V
C
iss
C
oss
C
rss
Q
g
*
Q
gs
*
Q
gd
*
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
V
DD
=15V, V
GS
=10V
I
D
=6A, R
G
=3Ω
V
DS
=15V, V
GS
=10V, I
D
=6A
V
DS
=15V, f=1MHz, V
GS
=0V
-
-
-
-
-
-
-
-
-
-
742
126
76
16.5
4.0
2.6
7.4
27.7
12.2
7.6
-
-
-
-
-
-
-
-
ns
-
-
nC
pF
BV
DSS
I
DSS
I
GSS
V
th
R
DS(ON)
*
V
GS
=4.5V, I
D
=5A
I
D(ON)
*
g
fs
*
V
DS
=5V, V
GS
=10V
V
DS
=5V, I
D
=6A
-
20
-
35
-
20
42
-
-
A
S
I
D
=250μ V
GS
=0V
A,
V
DS
=24V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
DS
=V
GS,
I
D
=250μ
A
V
GS
=10V, I
D
=6A
30
-
-
1.0
-
-
-
-
1.7
24
-
1
±100
2.5
28
mΩ
V
μ
A
nA
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Note> * Pulse Test : Pulse width
≤
300㎲ , Duty cycle
≤
2%
2011. 8. 30
Revision No : 0
2/5
KMB6D0DN30QB
Fig1. I
D
- V
DS
10
Fig2. R
DS(on)
- I
D
Drain Source On Resistance R
DS(ON)
(Ω)
0.16
Common Source
0.14
Ta= 25 C
Pulse Test
Drain Current I
D
(A)
8
V
GS
=10, 9, 8, 7, 6, 5, 4V
0.12
0.1
0.08
0.06
0.04
0.02
0
0
5
10
15
V
GS
=10.0
V
GS
=4.5
6
4
2
V
GS
=2.5V
V
GS
=1.5V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
20
Drain - Source Voltage V
DS
(V)
Drain Current I
D
(A)
Fig3. I
D
- V
GS
25
Fig4. R
DS(ON)
- T
j
Normalized On Resistance R
DS(ON)
1.6
1.4
1.2
1.0
0.8
0.6
0
V
GS
= 10V
I
D
= 6A
Drain Current I
D
(A)
20
15
10
5
0
125 C
25 C
-55 C
0
1.0
2.0
3.0
4.0
5.0
6.0
-75
-50
-25
0
25
50
75
100 125 150
Gate - Source Voltage V
GS
(V)
Junction Temperature Tj ( C )
Fig5. V
th
- Tj
Normalized Threshold Voltage V
th
Reverse Drain Current I
DR
(A)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
40
V
DS
= V
GS
I
D
= 250µA
Fig6. I
S
- V
SDF
10
1
-50
-25
0
25
50
75
100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
Junction Temperature Tj ( C )
Source - Drain Voltage V
SDF
(V)
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Revision No : 0
3/5
KMB6D0DN30QB
Fig7. C - V
DS
1800
1600
10
V
DS
= 15
V
I
D
= 2A
Fig8. Qg - V
GS
Gate - Source Voltage V
GS
(V)
Capacitance (pF)
1400
1200
1000
800
600
400
200
0
0
Coss
Crss
8
6
Ciss
4
2
0
0
4
8
12
16
20
5
10
15
20
25
30
Drain - Source Voltage V
DS
(V)
Gate - Charge Qg (nC)
Fig9. Safe Operation Area
10
2
Operation in this
area is limited by R
DS(ON)
100µs
1ms
10ms
100ms
Drain Current I
D
(A)
10
1
10
0
1s
DC 10s
10
-1
V
GS
= 10V
SINGLE PULSE
R
θJA
= 62.5 C/W
10
-2 -1
10
10
0
10
1
10
2
Drain - Source Voltage V
DS
(V)
Fig10. Transient Thermal Response Curve
Normalized Effective Transient
Thermal Resistance
1
0.5
0.2
10
-1
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
Single Pluse
R
θJA
= 62.5 C/W
10
-2
10
-3
10
-4
10
-3
10
-2
10
-1
1
10
1
10
2
10
3
Square Wave Pulse Duration (sec)
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Revision No : 0
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KMB6D0DN30QB
Fig11. Gate Charge
VGS
10 V
Schottky
Diode
ID
0.5
VDSS
ID
1.0 mA
V
DS
VGS
Q
Qgs
Qgd
Qg
Fig12. Resistive Load Switching
RL
VDS
90%
0.5 VDSS
6Ω
VDS
10 V
VGS
10%
t
d(on)
t
d(off)
VGS
tr
t
on
t
f
t
off
2011. 8. 30
Revision No : 0
5/5
微控制器 MCU
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