SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment.
KMB3D0P30SA
P-Ch Trench MOSFET
L
E
B
L
FEATURES
H
2
A
G
・V
DSS
=-30V, I
D
=-3A
・Drain
to Source On-state Resistance.
R
DS(ON)
=80mΩ(Max.) @ V
GS
=-10V
R
DS(ON)
=140mΩ(Max.) @ V
GS
=-4.5V
・Super
High Dense Cell Design
3
1
Q
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
C
N
K
M
SOT-23
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
DC@T
a
=25℃
(Note1)
Drain Current
Pulsed
T
a
=25℃
Drain Power Dissipation
T
a
=70℃
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
(Note1)
(Note1)
(Note1)
(Note1)
SYMBOL
V
DSS
V
GSS
I
D
I
DP
P
D
P-Ch
-30
±20
-3
UNIT
V
V
A
-12
1.25
W
0.8
150
-55½150
100
℃
℃
℃/W
T
j
T
stg
R
thJA
Note1)Surface Mounted on 1”
×1”
FR4 Board, t≤5sec.
PIN CONNECTION (TOP VIEW)
D
3
3
2
1
2
1
G
S
2009. 8. 17
Revision No : 2
J
D
1/4
KMB3D0P30SA
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Static
Drain to Source Breakdown Voltage
Drain Cut-off Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to SourceSource On Resistance
On State Drain Current
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Source to Drain Forward Voltage
I
S
I
SP
V
SD
V
GS
=0V, I
S
=-1.25A
-
-
(Note2)
(Note2)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
BV
DSS
I
DSS
I
DS
=-250μ V
GS
=0V,
A,
V
GS
=0V, V
DS
=-24V
V
GS
=0V, V
DS
=-24V, T
j
=55℃
-30
-
-
-
-1.0
(Note2)
(Note2)
(Note2)
(Note2)
-
-
-
-
-
64
103
-
4.5
-
-1
V
μ
A
-10
±100
-3.0
80
mΩ
140
-
-
A
S
nA
V
I
GSS
V
th
R
DS(ON)
V
GS
=±20V, V
DS
=0V
V
DS
=V
GS,
I
D
=250μ
A
V
GS
=-10V, I
D
=-3A
V
GS
=-4.5V, I
D
=-2.5A
-
-
-12
-
I
D(ON)
g
fs
V
GS
=-10V, V
DS
=-5V
V
DS
=-10V, I
D
=-3A
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15V, V
GS
=-10V
I
D
=-1A, R
G
=6Ω
(Note2)
-
V
DS
=-15V, V
GS
= 0V, f=1MHz,
-
-
-
V
DS
=-15V, V
GS
=-10V, I
D
=-3A
(Note2)
365
72
37
6.3
1.1
1.6
6.9
16
18
15
-
-
-
-
-
-
-
-
ns
-
-
nC
pF
-
-
-
-
-
-
-
-
-
-
-
-
-3.0
-12
-1.2
A
A
V
Note2) Pulse Test : Pulse width <300㎲ , Duty cycle < 2%
2009. 8. 17
Revision No : 2
2/4
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