SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment.
KMB2D0N60SA
N-Ch Trench MOSFET
L
E
B
L
FEATURES
H
2
A
G
・V
DSS
=60V, I
D
=2A
・Drain-Source
ON Resistance
R
DS(ON)
=160mΩ(Max.) @ V
GS
=10V
R
DS(ON)
=220mΩ(Max.) @ V
GS
=4.5V
・Super
High Dense Cell Design
3
1
Q
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
C
N
K
M
℃
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC@Ta=25℃
I
D
Drain Current
DC@Ta=70℃
Pulsed
Drain-Source-Diode Forward Current
Ta=25℃
Drain Power Dissipation
Ta=70℃
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
T
j
T
stg
R
thJA
P
D
0.8
150
-55½150
100
℃
℃
℃/W
I
DP
I
S
1.6
10
1.0
1.25
W
A
A
SYMBOL
V
DSS
V
GSS
N-Ch
60
±20
2.0
UNIT
V
V
SOT-23
KND
Note>*Surface Mounted on 1
×
1 FR4 Board, t≤5sec
PIN CONNECTION (TOP VIEW)
D
3
3
2
1
2
1
G
S
2008. 2. 25
Revision No : 1
J
D
1/5
KMB2D0N60SA
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Drain-Source ON Resistance
BV
DSS
I
DSS
V
GS
=0V, V
DS
=60V, Tj=55℃
I
GSS
V
th
R
DS(ON)
*
V
GS
=4.5V, I
D
=1.7A
V
GS
=10V, V
DS
≥4.5V
On-State Drain Current
Forward Transconductance
Dynamic
Input Capaclitance
Ouput Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delat Time
Turn-On Rise Time
Turn-Off Deley Time
Turn-Off Fall Time
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
*
V
GS
=0V, I
S
=1A
-
0.77
1.2
V
C
iss
C
oss
C
rss
Q
g
*
Q
gs
*
Q
gd
*
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
V
DD
=30V, V
GS
=4.5V
I
D
=1A, R
G
=6Ω
V
DS
=30V, V
GS
=10V, I
D
=2A
V
DS
=30V, f=1MHz, V
GS
=0V
-
-
-
-
-
-
-
-
-
-
240
30
16
4.8
0.8
1.0
7
10
17
6
-
-
-
10
-
-
15
20
ns
35
15
nC
pF
I
D(ON)
*
g
fs
*
V
GS
=4.5V, V
DS
≥4.5V
V
DS
=4.5V, I
D
=2.0A
-
6
4
-
155
-
-
4.6
220
-
A
-
-
S
V
GS
=±20V, V
DS
=0V
V
DS
=V
GS,
I
D
=250μ
A
V
GS
=10V, I
D
=2A
-
-
1.5
-
-
-
-
125
10
±100
-
160
mΩ
nA
V
I
DS
=250μ V
GS
=0V,
A,
V
GS
=0V, V
DS
=60V
60
-
-
-
-
0.5
μ
A
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
NOTE 1> * Pulse Test : Pulse width <300㎲ , Duty cycle < 2%
2008. 2. 25
Revision No : 1
2/5
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