SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for DC/DC Converter and Battery pack..
D
KMB012N30QA
N-Ch Trench MOSFET
H
T
P
G
U
L
FEATURES
・V
DSS
=30V, I
D
=12A.
・Drain
to Source On Resistance.
R
DS(ON)
=7mΩ(Max.) @ V
GS
=10V
R
DS(ON)
=11mΩ(Max.) @ V
GS
=4.5V
B1 B2
1
4
8
5
A
MOSFET Maximum Ratings (Ta=25℃ Unless otherwise noted)
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
DC@Ta=25℃ (Note 1)
Drain Current
Pulsed
Drain Power Dissipation
@Ta=25℃
(Note 1)
(Note 1)
I
DP
P
D
T
j
T
stg
(Note 1)
R
thJA
48
2.5
150
-55~150
50
A
W
℃
℃
℃/W
SYMBOL RATING
V
DSS
V
GSS
I
D
30
±20
12
UNIT
V
V
A
DIM
A
B1
B2
D
G
H
L
P
T
U
MILLIMETERS
_
4.85 + 0.2
_
3.94 + 0.2
_
6.02 + 0.3
_ 0.1
0.4 +
0.15+0.1/-0.05
_
1.63 + 0.2
_
0.65 + 0.2
1.27
0.20+0.1/-0.05
0.1 MAX
FLP-8
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note1) Surface Mounted on 1″
×1″
FR4 Board, t≤10sec.
KMB012N
30QA
PIN CONNECTION (TOP VIEW)
S
S
S
G
1
8
D
D
D
D
1
2
3
8
7
6
5
2
7
3
6
4
4
5
2009. 09. 04
Revision No : 0
1/4
KMB012N30QA
ELECTRICAL CHARACTERISTICS (Ta=25℃) UNLESS OTHERWISE NOTED
CHARACTERISTIC
Static
Drain to Source Breakdown Voltage
Drain Cut-off Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Forward Transconductance
Dynamic
Input Capaclitance
Ouput Capacitance
Reverse Transfer Capacitance
V
GS
=10V
Total Gate Charge
V
GS
=4.5V
V
DS
=15V, V
GS
=10V, I
D
=12A
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source to Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Source to Drain Forward Voltage
I
S
I
SP
V
SD
V
GS
=0V, I
S
=1.7A
-
-
(Note2)
-
-
-
-
-
0.75
1.7
A
48
1.2
V
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
=15V, V
GS
=10V
I
D
=1A, R
G
=6Ω
(Note2)
(Note2)
-
-
-
-
-
-
4.8
6.6
7.0
7.5
28.3
9.9
-
-
-
-
ns
-
-
Q
g
-
14.5
-
nC
C
iss
C
oss
C
rss
V
DS
=15V, V
GS
=0V, f=1MHz
(Note2)
-
-
-
-
1310
420
205
27.0
-
-
-
-
pF
BV
DSS
I
DSS
I
GSS
V
th
R
DS(ON)
V
GS
=4.5V, I
D
=10A
g
fs
V
DS
=5V, I
D
=12A
(Note2)
(Note2)
-
-
8.5
48
11.0
-
S
V
GS
=0V, I
D
=250μ
A
V
GS
=0V, V
DS
=30V
V
GS
=±20V, V
DS
=0V
V
DS
=V
GS,
I
D
=250μ
A
V
GS
=10V, I
D
=12A
(Note2)
30
-
-
1.0
-
-
-
-
-
6.0
-
1
±100
3.0
7.0
mΩ
V
μ
A
nA
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Note2) Pulse Test : Pulse Width≤300㎲, Duty Cycle≤2%
2009. 09. 04
Revision No : 0
2/4
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