CMPDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM7002AE
is a special ESD protected version of the 2N7002
enhancement-mode N-Channel MOSFET designed for
high speed pulsed amplifier and driver applications.
MARKING CODE: C702E
SOT-23 CASE
APPLICATIONS:
•
Load/Power switches
•
DC-DC converter circuits
•
Power management
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
FEATURES:
♦
ESD protection up to 1800V
•
•
350mW power dissipation
•
Low gate charge
•
Low rDS(ON)
SYMBOL
VDS
VDG
VGS
ID
IDM
PD
TJ, Tstg
Θ
JA
60
60
20
300
800
350
-65 to +150
357
UNITS
V
V
V
mA
mA
mW
°C
°C/W
♦
Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
♦
IDSS
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=20V, VDS=0
VDS=60V, VGS=0
VDS=60V, VGS=0, TJ=125°C
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=0, IS=115mA
VGS=10V, ID=500mA
VGS=5.0V, ID=100mA
VGS=2.5V, ID=10mA
VDS=10V, ID=200mA
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
220
MAX
10
100
500
UNITS
μA
nA
μA
V
V
V
Ω
Ω
Ω
mS
pF
pF
pF
IDSS
♦
BVDSS
VGS(th)
VSD
60
1.2
0.5
70
1.5
1.0
1.1
3.0
2.0
1.1
1.4
1.8
6.0
5.0
50
25
♦
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
♦
Enhanced specification
R3 (3-October 2013)
CMPDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL
SYMBOL
Qg(tot)
Qgs
Qgd
ton
toff
CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
TYP
MAX
VDS=10V, VGS=4.5V, ID=200mA
0.5
VDS=10V, VGS=4.5V, ID=200mA
0.2
VDS=10V, VGS=4.5V, ID=200mA
VDD=30V, VGS=10V, ID=200mA
RG=25Ω, RL=150Ω
0.14
20
45
UNITS
nC
nC
nC
ns
ns
SOT-23 CASE - MECHANICAL OUTLINE
2
1
3
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: C702E
R3 (3-October 2013)
w w w. c e n t r a l s e m i . c o m
CMPDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (3-October 2013)
w w w. c e n t r a l s e m i . c o m