DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BZX585 series
Voltage regulator diodes
Product data sheet
Supersedes data of 2004 Mar 26
2004 Jun 22
NXP Semiconductors
Product data sheet
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 300 mW
•
Two tolerance series:
±
2 % and
±
5 %
•
Working voltage range: nominal 2.4 V to 75 V
(E24 range)
•
Non-repetitive peak reverse power dissipation: max.
40 W.
APPLICATIONS
•
General regulation functions.
DESCRIPTION
Low-power voltage regulator diodes encapsulated in an
ultra small SOD523 plastic SMD package.
The diodes are available in the normalized E24
±
2 %
(BZX585-B) and
±
5 % (BZX585-C) tolerance range.
The series consists of 37 types with nominal working
voltages from 2.4 V to 75 V.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
PINNING
PIN
1
2
BZX585 series
handbook, halfpage
1
Top view
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523) and symbol.
;
;
cathode
anode
EA
EB
EC
ED
EE
EF
EG
EH
EK
EL
DESCRIPTION
2
MAM387
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX585-B2V4 to BZX585-B75
BZX585-B2V4
BZX585-B2V7
BZX585-B3V0
BZX585-B3V3
BZX585-B3V6
BZX585-B3V9
BZX585-B4V3
BZX585-B4V7
BZX585-B5V1
BZX585-B5V6
C1
C2
C3
C4
C5
C6
C7
C8
C9
C0
BZX585-B6V2
BZX585-B6V8
BZX585-B7V5
BZX585-B8V2
BZX585-B9V1
BZX585-B10
BZX585-B11
BZX585-B12
BZX585-B13
BZX585-B15
E1
E2
E3
E4
E5
E6
E7
E8
E9
E0
BZX585-B16
BZX585-B18
BZX585-B20
BZX585-B22
BZX585-B24
BZX585-B27
BZX585-B30
BZX585-B33
BZX585-B36
BZX585-B39
BZX585-B43
BZX585-B47
BZX585-B51
BZX585-B56
BZX585-B62
BZX585-B68
BZX585-B75
EM
EN
EP
ER
ES
ET
EU
2004 Jun 22
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX585 series
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX585-C2V4 to BZX585-C75
BZX585-C2V4
BZX585-C2V7
BZX585-C3V0
BZX585-C3V3
BZX585-C3V6
BZX585-C3V9
BZX585-C4V3
BZX585-C4V7
BZX585-C5V1
BZX585-C5V6
F1
F2
F3
F4
F5
F6
F7
F8
F9
F0
BZX585-C6V2
BZX585-C6V8
BZX585-C7V5
BZX585-C8V2
BZX585-C9V1
BZX585-C10
BZX585-C11
BZX585-C12
BZX585-C13
BZX585-C15
H1
H2
H3
H4
H5
H6
H7
H8
H9
H0
BZX585-C16
BZX585-C18
BZX585-C20
BZX585-C22
BZX585-C24
BZX585-C27
BZX585-C30
BZX585-C33
BZX585-C36
BZX585-C39
HA
HB
HC
HD
HE
HF
HG
HH
HK
HL
BZX585-C43
BZX585-C47
BZX585-C51
BZX585-C56
BZX585-C62
BZX585-C68
BZX585-C75
HM
HN
HP
HR
HS
HT
HU
ORDERING INFORMATION
TYPE
NUMBER
BZX585-B2V4
to
BZX585-B75
BZX585-C2V4
to
BZX585-C75
PACKAGE
NAME
−
DESCRIPTION
Plastic surface mounted package; 2 leads
VERSION
SOD523
−
Plastic surface mounted package; 2 leads
SOD523
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
ZSM
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board with approximately 35 mm
2
Cu area at cathode tab.
PARAMETER
continuous forward current
non-repetitive peak reverse
current
non-repetitive peak reverse
power dissipation
total power dissipation
storage temperature
junction temperature
t
p
= 100
μs;
square wave;
T
amb
= 25
°C
prior to surge
t
p
= 100
μs;
square wave;
T
amb
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
CONDITIONS
−
MIN.
MAX.
200
UNIT
mA
see Tables 1 and 2
−
−
−65
−65
40
300
+150
+150
W
mW
°C
°C
2004 Jun 22
3
NXP Semiconductors
Product data sheet
Voltage regulator diodes
ELECTRICAL CHARACTERISTICS
Total BZX585-B and C series
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZX585-B/C2V4
BZX585-B/C2V7
BZX585-B/C3V0
BZX585-B/C3V3
BZX585-B/C3V6
BZX585-B/C3V9
BZX585-B/C4V3
BZX585-B/C4V7
BZX585-B/C5V1
BZX585-B/C5V6
BZX585-B/C6V2
BZX585-B/C6V8
BZX585-B/C7V5
BZX585-B/C8V2
BZX585-B/C9V1
BZX585-B/C10
BZX585-B/C11
BZX585-B/C12
BZX585-B/C13
BZX585-B/C15 to 75
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
V
R
= 0.7V
Znom
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
CONDITIONS
I
F
= 10 mA; see Fig.2
I
F
= 100 mA; see Fig.2
0.9
1.1
BZX585 series
MAX.
V
V
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
nA
nA
nA
nA
nA
nA
nA
UNIT
2004 Jun 22
4
Table 1
Per type BZX585-B/C2V4 to
B/C24
T
amb
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 5 mA
Tol.
±
5% (C)
MIN.
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
MAX.
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
at I
Ztest
= 1 mA
TYP.
275
300
325
350
375
400
410
425
400
80
40
30
15
20
20
20
25
25
25
25
50
50
60
60
60
MAX.
400
450
500
500
500
500
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
at I
Ztest
= 5 mA
TYP.
70
75
80
85
85
85
80
50
40
15
6
6
2
2
2
2
2
2
2
3
10
10
15
20
25
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
40
45
55
55
70
−1.3
−1.4
−1.6
−1.8
−1.9
−1.9
−1.7
−1.2
−0.5
1.0
2.2
3.0
3.6
4.3
5.2
6.0
6.9
7.9
8.8
10.7
12.4
14.4
16.4
18.4
20.4
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see figs
3
AND
4)
TYP.
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
110
105
105
100
90
80
70
60
55
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
μs
MAX.
2004 Jun 22
5
NXP Semiconductors
Voltage regulator diodes
BZX585-
B or C
Tol.
±
2% (B)
XXX
MIN.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
MAX.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
10.78 11.22
11.76 12.24
12.74 13.26
14.70 15.30
15.68 16.32
17.64 18.36
19.60 20.40
21.56 22.44
23.52 24.48
BZX585 series
Product data sheet
嵌入式系统
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