1;3
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
BYW29E series
SYMBOL
QUICK REFERENCE DATA
V
R
= 100V/ 150 V/ 200 V
V
F
≤
0.895 V
I
F(AV)
= 8 A
I
RRM
≤
0.2 A
t
rr
≤
25 ns
k
1
a
2
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYW29E series is supplied in
the conventional leaded SOD59
(TO220AC) package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
I
RRM
I
RSM
T
j
T
stg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Peak non-repetitive reverse
surge current
Operating junction
temperature
Storage temperature
square wave;
δ
= 0.5; T
mb
≤
128 ˚C
square wave;
δ
= 0.5; T
mb
≤
128 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied V
RRM(max)
t
p
= 2
μs; δ
= 0.001
t
p
= 100
μs
CONDITIONS
BYW29E
-
-
-
-
-
-
-
-
-
-
- 40
MIN.
-100
100
100
100
MAX.
-150
150
150
150
8
16
80
88
0.2
0.2
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
8
UNIT
kV
August 2001
1
Rev 1.400
1;3
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
in free air
-
BYW29E series
TYP. MAX. UNIT
-
60
2.7
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
I
R
Q
rr
t
rr1
t
rr2
V
fr
Forward voltage
Reverse current
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
CONDITIONS
I
F
= 8 A; T
j
= 150˚C
I
F
= 8 A
I
F
= 20 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/μs
I
F
= 1 A; V
R
≥
30 V; -dI
F
/dt = 100 A/μs
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/μs
MIN.
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
0.8
0.92
1.1
2
0.2
4
20
15
1
0.895
1.05
1.3
10
0.6
11
25
20
-
V
V
V
μA
mA
nC
ns
ns
V
August 2001
2
Rev 1.400
1;3
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29E series
I
dI
F
dt
F
0.5A
IF
t
rr
time
0A
I rec = 0.25A
IR
trr2
Q
I
I
s
10%
100%
R
rrm
I = 1A
R
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.4. Definition of t
rr2
I
F
12
10
8
PF / W
Vo = 0.791 V
Rs = 0.013 Ohms
BYW29
Tmb(max) / C
108
D = 1.0
115
0.5
122
129
136
143
T
t
time
VF
V
VF
time
fr
6
0.1
4
0.2
I
t
p
D=
t
p
T
2
0
0
2
4
6
IF(AV) / A
8
10
150
12
Fig.2. Definition of V
fr
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
√D.
Tmb(max) / C
a = 1.57
1.9
2.2
2.8
4
R
8
7
6
PF / W
Vo = 0.791 V
Rs = 0.013 Ohms
BYW29
122
125.5
129
132.5
136
139.5
143
146.5
D.U.T.
Voltage Pulse Source
5
4
3
Current
shunt
2
to ’scope
1
0
0
1
2
3
4
IF(AV) / A
5
6
7
150
8
Fig.3. Circuit schematic for t
rr2
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
August 2001
3
Rev 1.400
1;3
Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29E series
trr / ns
1000
100 Qs / nC
100
IF=10A
IF=10A
5A
2A
1A
10
IF=1A
10
1
1.0
1
10
dIF/dt (A/us)
100
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum t
rr
at T
j
= 25 ˚C.
Fig.10. Maximum Q
s
at T
j
= 25 ˚C.
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF=10A
1
IF=1A
1
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYL1025
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C.
Fig.11. Transient thermal impedance; Z
th j-mb
= f(t
p
).
30
IF / A
Tj=150 C
Tj=25 C
BYW29
20
typ
10
max
0
0
0.5
1
VF / V
1.5
2
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
August 2001
4
Rev 1.400
嵌入式系统
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