TO
-2
20F
BYV25FX-600
Enhanced ultrafast power diode
Rev. 02 — 7 March 2011
Product data sheet
1. Product profile
1.1 General description
Enhanced ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features and benefits
High thermal cycling performance
Isolated package
Low on-state losses
Low thermal resistance
Soft recovery characteristic
1.3 Applications
Dual Mode (DCM and CCM) PFC
Power Factor Correction (PFC) for
Interleaved Topology
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak
reverse voltage
average forward
current
square-wave pulse;
δ
= 0.5;
T
h
≤
97 °C;
see
Figure 1;
see
Figure 2
I
F
= 5 A; T
j
= 25 °C;
see
Figure 5
I
F
= 5 A; T
j
= 150 °C;
see
Figure 5
Dynamic characteristics
t
rr
reverse recovery
time
I
F
= 1 A; V
R
= 30 V;
dI
F
/dt = 100 A/µs; T
j
= 25 °C;
see
Figure 6
-
17.5 35
ns
Conditions
Min
-
-
Typ
-
-
Max Unit
600
5
V
A
Static characteristics
V
F
forward voltage
-
-
1.3
1.1
1.9
1.7
V
V
NXP Semiconductors
BYV25FX-600
Enhanced ultrafast power diode
2. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
n.c.
cathode
anode
mounting base; isolated
mb
K
A
001aaa020
Simplified outline
Graphic symbol
1
2
SOD113 (TO-220F)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYV25FX-600
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220 "full pack"
Version
SOD113
Type number
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
DC
square-wave pulse;
δ
= 0.5 ;
T
h
≤
97 °C;
see
Figure 1;
see
Figure 2
square-wave pulse;
δ
= 0.5 ; t
p
= 25 µs;
T
h
≤
97 °C
t
p
= 10 ms; sine-wave pulse;
T
j(init)
= 25 °C; see
Figure 3
t
p
= 8.3 ms; sine-wave pulse;
T
j(init)
= 25 °C; see
Figure 3
T
stg
T
j
storage temperature
junction temperature
Conditions
Min
-
-
-
-
Max
600
600
600
5
Unit
V
V
V
A
In accordance with the Absolute Maximum Rating System (IEC 60134).
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward
current
-
-
-
-40
-
10
60
66
150
150
A
A
A
°C
°C
BYV25FX-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 March 2011
2 of 11
NXP Semiconductors
BYV25FX-600
Enhanced ultrafast power diode
14
P
tot
(W)
12
10
8
6
4
0.1
0.5
003aaf430
10
P
tot
(W)
8
2.2
6
2.8
4.0
4
1.9
003aaf431
δ
=1
a = 1.57
0.2
2
2
0
0
2
4
6
I
F(AV)
(A)
8
0
0
1
2
3
4
5
I
F(AV)
(A)
V
o
= 1.499 V; R
s
= 0.041
Ω
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
V
o
= 1.499 V; R
s
= 0.041
Ω
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
003aaf446
10
3
I
FSM
(A)
10
2
P
t
p
t
10
1
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig 3.
Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values
BYV25FX-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 March 2011
3 of 11
NXP Semiconductors
BYV25FX-600
Enhanced ultrafast power diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-h)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to heatsink
thermal resistance from
junction to ambient
Conditions
with heatsink compound;
see
Figure 4
in free air
Min
-
-
Typ
-
55
Max
5.5
-
Unit
K/W
K/W
10
Z
th(j-h)
(K/W)
1
001aaf257
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 4.
Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 6.
Symbol
V
isol(RMS)
Isolation characteristics
Parameter
RMS isolation voltage
Conditions
50 Hz
≤
f
≤
60 Hz; RH
≤
65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
f = 1 MHz; from cathode to external
heatsink
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BYV25FX-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 March 2011
4 of 11
NXP Semiconductors
BYV25FX-600
Enhanced ultrafast power diode
7. Characteristics
Table 7.
Symbol
V
F
I
R
Characteristics
Parameter
forward voltage
reverse current
Conditions
I
F
= 5 A; T
j
= 25 °C; see
Figure 5
I
F
= 5 A; T
j
= 150 °C; see
Figure 5
V
R
= 600 V; T
j
= 100 °C
V
R
= 600 V; T
j
= 25 °C
Dynamic characteristics
Q
r
t
rr
I
RM
V
FRM
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; see
Figure 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; see
Figure 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; see
Figure 6
I
F
= 1 A; dI
F
/dt = 100 A/µs; T
j
= 25 °C;
see
Figure 7
-
-
-
-
13
17.5
1.5
3.2
-
35
-
-
nC
ns
A
V
Min
-
-
-
-
Typ
1.3
1.1
-
-
Max
1.9
1.7
1.5
50
Unit
V
V
mA
µA
Static characteristics
20
I
F
(A)
16
003aaf445
I
F
dl
F
dt
t
rr
12
time
(1)
(2)
(3)
8
Q
r
4
I
R
0
0
1
2
V
F
(A)
3
I
RM
25 %
100 %
003aac562
V
o
= 1.499 V; R
s
= 0.041
Ω
(1) T
j
= 150 °C; typical values;
(2) T
j
= 150 °C; maximum values;
(3) T
j
= 25 °C; maximum values;
Fig 5.
Forward current as a function of forward
voltage
Fig 6.
Reverse recovery definitions; ramp recovery
BYV25FX-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 March 2011
5 of 11
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