CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C308T3
Issued Date : 2015.09.21
Revised Date :
Page No. : 1/7
BTPA92T3
Features
•
High breakdown voltage, BV
CEO
≥300V
•
Excellent current gain characteristics
•
Complementary to BTNA42T3
•
Pb-free lead plating and halogen-free package
Symbol
BTPA92T3
Outline
TO-126
B
：
Base
C
：
Collector
E
：
Emitter
ECB
Ordering Information
Device
BTPA92T3-0-BL-X
Package
Shipping
TO-126
200 pcs / bag, 3,000
(Pb-free lead plating and halogen-free package) pcs/box 30,000 pcs/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTPA92T3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Note : *1. Single Pulse Pw≤300μs, Duty≤2%
.
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(pulse)
Pd(Ta=25
℃
)
Pd(Tc=25
℃
)
Tj
Tstg
Spec. No. : C308T3
Issued Date : 2015.09.21
Revised Date :
Page No. : 2/7
Limit
-300
-300
-7
-300
-500
1.2
10
-55~+150
-55~+150
Unit
V
V
V
mA
mA
W
°
C
°
C
*1
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
CE(sat)
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
f
T
Cob
Min.
-300
-300
-7
-
-
-
-
-
-
120
60
-
-
Typ.
-
-
-
-
-
-0.09
-0.13
-0.19
-0.73
-
-
73
7.3
Max.
-
-
-
-100
-100
-0.2
-0.3
-0.5
-1
270
-
-
-
Unit
V
V
V
nA
nA
V
V
V
V
-
-
MHz
pF
Test Conditions
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-300V
V
EB
=-7V
I
C
=-20mA, I
B
=-2mA
I
C
=-50mA, I
B
=-5mA
I
C
=-100mA, I
B
=-10mA
I
C
=-20mA, I
B
=-2mA
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-100mA
V
CE
=-20V, I
C
=-50mA, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
BTPA92T3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Emitter Grounded Output Characteristics
0.1
0.09
-IC, Collector Current(A)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
6
300uA
200uA
-IB=100uA
500uA
400uA
1mA
Spec. No. : C308T3
Issued Date : 2015.09.21
Revised Date :
Page No. : 3/7
Emitter Grounded Output Characteristics
0.18
0.16
-IC, Collector Current(A)
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
6
-IB=500uA
2.5mA
1.5mA
1mA
5mA
Emitter Grounded Output Characteristics
0.3
20mA
Emitter Grounded Output Characteristics
0.45
0.4
-IC, Collector Current(A)
50mA
-IC, Collector Current(A)
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
6
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
6
10mA
-IB=5mA
25mA
8mA
6mA
4mA
-IB=2mA
Current Gain vs Collector Current
1000
VCE=-1V
Current Gain vs Collector Current
1000
VCE=-5V
Current Gain---HFE
Current Gain---HFE
100
100
10
Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
1
0.1
1
10
100
-IC, Collector Current(mA)
1000
1
0.1
1
10
100
-IC, Collector Current(mA)
1000
BTPA92T3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics (Cont.)
Current Gain vs Collector Current
1000
VCE=-10V
Spec. No. : C308T3
Issued Date : 2015.09.21
Revised Date :
Page No. : 4/7
Saturation Voltage vs Collector Current
1000
VCESAT@IC=10IB
100
Saturation Voltage---(mV)
Current Gain---HFE
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0C
Ta=-40°C
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
1
0.1
1
10
100
-IC, Collector Current(mA)
1000
10
0.1
1
10
100
-IC, Collector Current(mA)
1000
Saturation Voltage vs Collector Current
1000
VCESAT@IC=20IB
Saturation Voltage vs Collector Current
10000
VBESAT@IC=10IB
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
Saturation Voltage---(mV)
Saturation Voltage---(mV)
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
0.1
1
10
100
-IC, Collector Current(mA)
1000
1000
100
0.1
1
10
100
-IC, Collector CurrentmA)
1000
On Voltage vs Collector Current
10000
VBEON@VCE=-5V
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
Capacitance vs Reverse-biased Voltage
100
On Voltage---(mV)
Capacitance---(pF)
Cib
1000
10
Cob
100
0.1
1
10
100
-IC, Collector Current(mA)
1000
1
0.1
1
10
-VR, Reverse-biased Voltage(V)
100
BTPA92T3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics (Cont.)
Cutoff Frequency vs Collector Current
100
Cutoff Frequency---fT(MHz)
VCE=-20V
Spec. No. : C308T3
Issued Date : 2015.09.21
Revised Date :
Page No. : 5/7
Power Derating Curve
1.4
Power Dissipation---PD(W)
1.2
1
0.8
0.6
0.4
0.2
0
10
1
10
-IC, Collector Current(mA)
100
0
50
100
150
Ambient Temperature---TA(℃)
200
Power Derating Curve
12
Power Dissipation---PD(W)
10
8
6
4
2
0
0
50
100
150
Case
Temperature---TC(℃)
200
BTPA92T3
CYStek Product Specification
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