CYStech Electronics Corp.
High Voltage NPN Triple Diffused Planar Transistor
Spec. No. : C663J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 1/7
BTC3097J3
Features
•
High voltage, BV
CBO
=1600V min., BV
CEO
=800V min.
•
Pb-free lead plating package
Symbol
BTC3097J3
Outline
TO-252(DPAK)
B：Base
C：Collector
E：Emitter
B C E
Ordering Information
Device
BTC3097J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3:2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTC3097J3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @T
A
=25℃
Power Dissipation @T
C
=25℃
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw
≦
300μs,Duty
≦
2%.
Spec. No. : C663J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 2/7
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
I
B
P
D
Tj ; Tstg
Limit
1600
800
6
1
3 *1
0.5
1
40
-55~+150
Unit
V
V
V
A
A
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
12.5
3.1
Unit
°C/W
°C/W
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
*h
FE
3
Cob
tr
tstg
tf
Min.
1600
800
6
-
-
-
-
-
-
20
22
5
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
Max.
-
-
-
10
10
100
0.3
0.4
1.2
-
45
-
-
0.8
3
0.4
Unit
V
V
V
μA
μA
nA
V
V
V
-
-
-
pF
μs
Test Conditions
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=1600V, I
E
=0
V
CB
=800V, I
B
=0
V
EB
=6V, I
C
=0
I
C
=200mA, I
B
=40mA
I
C
=500mA, I
B
=100mA
I
C
=500mA, I
B
=100mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=500mA
V
CB
=10V, f=1MHz
V
CC
=400V, I
C
=0.5A, I
B
1=0.1A
I
B
2=-0.2A
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
BTC3097J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Emitter Grounded Output Characteristics
0.045
0.04
Collector Current---IC(A)
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
500uA
400uA
300uA
200uA
IB=100uA
1mA
Spec. No. : C663J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 3/7
Emitter Grounded Output Characteristics
0.16
0.14
Collector Current---IC(A)
0.12
0.1
0.08
0.06
0.04
0.02
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
2.5mA
2mA
1.5mA
1mA
IB=500uA
5mA
Emitter Grounded Output Characteristics
0.35
Collector Current---IC(A)
0.3
0.25
0.2
0.15
0.1
IB=2mA
10mA
8mA
6mA
4mA
20mA
Emitter Grounded Output Characteristics
0.6
Collector Current---IC(A)
0.5
0.4
0.3
0.2
0.1
0
20mA
15mA
10mA
IB=5mA
50mA
0.05
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
100
VCE=5V
Saturation Voltage vs Collector Current
10000
VCESAT@IC=5IB
Current Gain---HFE
VCE=2V
Saturation Voltage---(mV)
10000
1000
10
VCE=1V
100
1
1
10
100
1000
Collector Current---IC(mA)
10
1
10
100
1000
Collector Current---IC(mA)
10000
BTC3097J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
10000
VBESAT@IC=5IB
Spec. No. : C663J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 4/7
Capacitance vs Reverse-biased Voltage
1000
Saturation Voltage---(mV)
Capacitance---(pF)
Cib
100
1000
10
Cob
100
1
10
100
1000
Collector Current---IC(mA)
10000
1
0.1
1
10
Reverse-biased Voltage---VR(V)
100
Onn Voltage vs Collector Current
10000
VBEON @ VCE=5V
Power Derating Curve
1.2
Power Dissipation---PD(W)
1
0.8
0.6
0.4
0.2
0
On Voltage---(mV)
1000
100
1
10
100
1000
Collector Current---IC(mA)
10000
0
50
100
150
Ambient
Temperature---TA(℃)
200
Power Derating Curve
45
40
Power Dissipation---PD(W)
35
30
25
20
15
10
5
0
0
50
100
150
Case Temperature---TC(℃)
200
BTC3097J3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C663J3
Issued Date : 2015.09.14
Revised Date :
Page No. : 5/7
Carrier Tape Dimension
BTC3097J3
CYStek Product Specification
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