BCM61B
NPN/NPN matched double transistor
Rev. 02 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN matched double transistor in a SOT143B small Surface-Mounted Device (SMD)
plastic package. Matched version of BCV61.
PNP/PNP equivalent: BCM62B
1.2 Features
I
Current gain matching
1.3 Applications
I
Current mirror
I
Differential amplifier
1.4 Quick reference data
Table 1.
Symbol
V
CEO
h
FE
Quick reference data
Parameter
collector-emitter voltage
DC current gain
Conditions
open base
V
CE
= 5 V;
I
C
= 2 mA
Min
-
200
Typ
-
290
Max
45
450
Unit
V
Per transistor TR1
Per transistor
I
C
Per device
I
C1
/I
E2
current matching
V
CE1
= 5 V;
I
E2
=
−0.5
mA;
T
amb
≤
25
°C
[1]
collector current
-
0.92
-
1.02
100
1.12
mA
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
NXP Semiconductors
BCM61B
NPN/NPN matched double transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
collector TR2, base TR1 and TR2
collector TR1
emitter TR1
emitter TR2
1
2
1
2
006aaa842
Simplified outline
4
3
Symbol
4
3
TR2
TR1
3. Ordering information
Table 3.
Ordering information
Package
Name
BCM61B
-
Description
plastic surface-mounted package; 4 leads
Version
SOT143B
Type number
4. Marking
Table 4.
BCM61B
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
*AC
Type number
BCM61B_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
2 of 13
NXP Semiconductors
BCM61B
NPN/NPN matched double transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBS
I
C
I
CM
P
tot
Per device
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
V
CB
= 0 V
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
-
-
−65
−65
Max
50
45
6
100
200
220
390
150
+150
+150
Unit
V
V
V
mA
mA
mW
mW
°C
°C
°C
Per transistor TR1
Per transistor
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Per device
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
568
Unit
K/W
Per transistor
in free air
[1]
-
-
321
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BCM61B_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
3 of 13
NXP Semiconductors
BCM61B
NPN/NPN matched double transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
I
CBO
Parameter
collector-base cut-off
current
Conditions
V
CB
= 30 V;
I
E
= 0 A
V
CB
= 30 V;
I
E
= 0 A;
T
j
= 150
°C
I
EBO
h
FE
emitter-base cut-off
current
DC current gain
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V;
I
C
= 10
µA
V
CE
= 5 V;
I
C
= 100
µA
V
CE
= 5 V;
I
C
= 2 mA
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA;
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
V
BEsat
base-emitter saturation I
C
= 10 mA;
voltage
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
V
BE
base-emitter voltage
V
CE
= 5 V;
I
C
= 2 mA
V
CE
= 5 V;
I
C
= 10 mA
C
c
collector capacitance
V
CB
= 10 V;
I
E
= i
e
= 0 A;
f = 1 MHz
V
EB
= 0.5 V;
I
C
= i
c
= 0 A;
f = 1 MHz
V
CE
= 5 V;
I
C
= 10 mA;
f = 100 MHz
V
CE
= 5 V;
I
C
= 0.2 mA;
R
S
= 2 kΩ;
f = 10 Hz to
15.7 kHz
V
CE
= 5 V;
I
C
= 0.2 mA;
R
S
= 2 kΩ;
f = 1 kHz;
B = 200 Hz
BCM61B_2
Min
-
-
Typ
-
-
Max
15
5
Unit
nA
µA
Per transistor TR1
-
-
100
200
-
-
[1]
-
250
-
290
50
200
760
910
660
-
-
100
-
-
450
200
400
-
-
710
770
1.5
nA
mV
mV
mV
mV
mV
mV
pF
-
-
610
-
-
[1]
[2]
[2]
C
e
emitter capacitance
-
11
-
pF
f
T
transition frequency
100
250
-
MHz
NF
noise figure
-
2.8
-
dB
-
3.3
-
dB
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
4 of 13
NXP Semiconductors
BCM61B
NPN/NPN matched double transistor
Table 7.
Characteristics
…continued
T
amb
= 25
°
C unless otherwise specified
Symbol
V
EBS
Parameter
emitter-base voltage
Conditions
V
CB
= 0 V;
I
E
=
−250
mA
V
CB
= 0 V;
I
E
=
−10 µA
Per device
I
C1
/I
E2
current matching
V
CE1
= 5 V;
I
E2
=
−0.5
mA;
T
amb
≤
25
°C
V
CE1
= 5 V;
I
E2
=
−0.5
mA;
T
amb
≤
150
°C
V
CE1
= 3 V;
I
E2
=
−0.5
mA;
T
amb
≤
25
°C
V
CE1
= 1 V;
I
E2
=
−0.5
mA;
T
amb
≤
25
°C
[1]
[2]
[3]
[3]
Min
-
−400
Typ
-
-
Max
−1.8
-
Unit
V
mV
Per transistor TR2
0.92
1.02
1.12
[3]
0.93
-
1.13
[3]
0.91
1.01
1.11
[3]
0.9
1
1.1
V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
V
BE
decreases by about 2 mV/K with increasing temperature.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BCM61B_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 28 August 2009
5 of 13
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