CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C905A3
Issued Date : 2014.12.01
Revised Date : 2015.04.09
Page No. : 1/8
BC327-40A3
Description
•
The BC327-40A3 is designed for general purpose switching and amplification applications.
•
Complementary to BC337-40A3.
•
Pb-free lead plating and halogen-free package
Symbol
BC327-40A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
CBE
Ordering Information
Device
BC327-40A3-0-TB-G
BC327-40A3-0-BK-G
Package
TO-92
(Pb-free lead plating and halogen-free package)
TO-92
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box,
10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BC327-40A3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Peak Base Current
Power Dissipation @ T
A
=25°C
Power Dissipation @ T
C
=25°C
Operating Junction and Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
D
Tj ; Tstg
Spec. No. : C905A3
Issued Date : 2014.12.01
Revised Date : 2015.04.09
Page No. : 2/8
Limits
-50
-45
-5
-500
-1
-200
625
1.5
-55~+150
Unit
V
V
V
mA
A
mA
mW
W
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
θJC
R
θJA
Value
83.3
200
Unit
°C/W
°C/W
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE
*h
FE
f
T
Cob
Min.
-50
-45
-5
-
-
-
-
-
250
40
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
180
16
Max.
-
-
-
-100
-100
-100
-700
-1.2
600
-
-
25
Unit
V
V
V
nA
nA
nA
mV
V
-
-
MHz
pF
Test Conditions
I
C
=-100μA
I
C
=-10mA
I
E
=-10μA
V
CB
=-50V
V
CE
=-45V
V
EB
=-5V
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-500mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-500mA
V
CE
=-5V, I
E
=-10mA, f=100MHz
V
CB
=-10V, I
E
=0A,f=1MHz
*Pulse Test: Pulse Width
≤380
μ
s, Duty Cycle≤2%
BC327-40A3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Emitter Grounded Output Characteristics
0.35
1mA
Spec. No. : C905A3
Issued Date : 2014.12.01
Revised Date : 2015.04.09
Page No. : 3/8
Emitter Grounded Output Characteristics
0.9
0.8
-IC, Collector Current(A)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2.5mA
2mA
1.5mA
1mA
-IB=500uA
5mA
0.3
-IC, Collector Current(A)
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
500uA
400uA
300uA
200uA
-IB=100uA
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
6
Emitter Grounded Output Characteristics
1.4
1.2
-IC, Collector Current(A)
1
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
6
10mA
6mA
4mA
-IB=2mA
Emitter Grounded Output Characteristics
2
1.8
50mA
25mA
20mA
10mA
-IB=5mA
20mA
-IC, Collector Current(A)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
1000.000
Current Gain vs Collector Current
1000
HFE, Current Gain
HFE, Current Gain
100.000
Tj=125°C
75°C
25°C
0°C
-40°C
100
Tj=125°C
75°C
25°C
0°C
-40°C
-VCE=1V
10.000
1
10
100
-IC, Collector Current(mA)
1000
-VCE=2V
10
1
10
100
-IC, Collector Current(mA)
1000
BC327-40A3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Current Gain vs Collector Current
1000
1000
Spec. No. : C905A3
Issued Date : 2014.12.01
Revised Date : 2015.04.09
Page No. : 4/8
Saturation Voltage vs Collector Current
-VCESAT, Saturation Voltage(mV)
VCESAT@IC=50IB
HFE, Current Gain
100
Tj=125°C
75°C
25°C
0°C
-40°C
-
VCE=5V
100
-40°C
0°C
25°C
75°C
125°C
10
1
10
100
1000
10
1
-IC, Collector Current(mA)
10
100
-IC, Collector Current(mA)
1000
Saturation Voltage vs Collector Current
1000
-VCESAT, Saturation Voltage(mV)
VCESAT@IC=100IB
Saturation Voltage vs Collector Current
1000
-VCESAT, Saturation Voltage(mV)
VCESAT@IC=150IB
100
-40°C
0°C
25°C
75°C
125°C
100
-40°C
0°C
25°C
75°C
125°C
10
1
10
100
-IC, Collector Current(mA)
1000
10
1
10
100
-IC, Collector Current(mA)
1000
Saturation Voltage vs Collector Current
10000
-VBESAT,Saturation Voltage(mV)
VBESAT@IC=10IB
-40°C
0°C
25°C
75°C
125°C
Saturation Voltage vs Collector Current
10000
VBESAT@IC=50IB
-40°C
0°C
25°C
75°C
125°C
-VBESAT, Saturation Voltage(mV)
1000
1000
100
1
10
100
-IC, Collector Current(mA)
1000
100
1
10
100
-IC, Collector Current(mA)
1000
BC327-40A3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
On Voltage vs Collector Current
10000
VBEON@VCE=-1V
-40°C
0°C
25°C
75°C
125°C
Spec. No. : C905A3
Issued Date : 2014.12.01
Revised Date : 2015.04.09
Page No. : 5/8
Power Derating Curve
700
PD, Power Dissipation(mW)
1000
600
500
400
300
200
100
-VBEON, On Voltage(mV)
1000
100
1
10
100
-IC, Collector Current(mA)
0
0
50
100
150
TA, Ambient Temperature(℃)
200
Transition Frequency vs Collector Current
1000
1000
-VCE=5V
Capacitance vs Reverse-biased Voltage
fT, Transition Frequency(MHz)
Cib
100
Capacitance(pF)
100
10
Cob
10
1
10
100
-IC, Collector Current(mA)
1000
1
0.1
1
10
-VR, Reverse-biased Voltage(V)
100
BC327-40A3
CYStek Product Specification
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