ioaucki, Una,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BC182, BC182B
Amplifier TYansistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector- Emitter Voltage
Collector- Base Voltage
Emitter- Base Voltage
Collector Current - Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25
C
C
Total Device Dissipation @ TQ = 25°C
Derate above 25"C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Symbol
R
ejA
Symbol
VCEO
VCBO
VEBO
Value
50
60
6.0
100
350
2.8
1.0
8.0
-55 ID +150
Unit
Vdc
Vdc
Vdc
Ic
PD
PD
Tj, T
st
g
mAdc
mW
mW/°C
W
mW/°C
°C
TO-92
3
STRAIGHT LEAD
BULK PACK
- 3
BENT LEAD
TAPE & REEL
AMMO PACK
Max
357
Unit
"C/W
MARKING DIAGRAM
125
c/w
RBJC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
= Assembly Location
= Year
= Work Week
NJ Sem.-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice mformat.on furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Qualify Semi-Conductors
BC182, BC182B
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage
(l
c
= 2.0 mA, I
B
= 0)
Collector- Base Breakdown Voltage
(I
C
= 10MA, I
E
= 0)
Emitter- Base Breakdown Voltage
(I
E
= 100
(
.A,I
C
= 0)
Collector Cutoff Current
(V
CB
= 50 V, V
BE
= 0)
Emitter-Base Leakage Current
(V
EB
= 4.0V, l
c
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10|*A, V
CE
= 5.0V)
(l
c
= 2.0 mA,V
C
E = 5.0V)
(l
c
= 100 mA, V
CE
= 5.0 V)
Collector- Emitter On Voltage
(l
c
= 10 mA, I
B
= 0.5 mA)
(l
c
= 100 mA, IB = 5.0 mA) (Note 1)
Base -Emitter Saturation Voltage
(l
c
= 100 mA, I
B
= 5.0 rnA) (Note 1)
Base-Emitter On Voltage
(l
c
= 100 nA, V
CE
= 5.0 V)
(l
c
= 2.0mA, VCE = 5.0V)
(l
c
= 100 mA, VCE = 5.0 V) (Note 1)
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(l
c
= 0.5 mA, V
CE
=
3
-° V, f = 100 MHz)
(l
c
= 10 mA, V
CE
= 5-0 V, f = 100 MHz)
Common Base Output Capacitance
(V
CB
= 10V, l
c
= 0, f = 1.0 MHz)
Common Base Input Capacitance
(V
EB
= 0.5 V, l
c
= 0, f = 1 .0 MHz)
Small-Signal Current Gain
(l
c
= 2.0 mA, V
CE
= 5.0 V, f = 1 .0 kHz)
Noise Figure
(l
c
= 0.2 mA, VCE = 5.0 V, R
g
= 2.0 kD, f = 1 .0 kHz)
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
BC182
BC182B
BC182
BC182
BC182B
BC182
v
CE(sat)
Symbol
Min
Typ
Max
Unit
V(BR)CEO
50
60
6.0
~
-
-
V
V
V
nA
nA
V(BR)CBO
—
—
V(BR)EBO
—
-
'CBO
0.2
—
15
IEBO
~
15
HFE
-
40
120
180
80
-
—
-
-
-
-
-
0.07
0.2
-
—
500
500
-
V
0.25
0.6
1.2
V
V
v
BE(sat)
v
BE(on)
-
0.55
—
0.5
0.62
0.83
-
0.7
-
fr
MHz
-
150
-
-
100
200
-
8.0
-
-
5.0
-
PF
pF
_
125
240
~
-
—
2.0
500
500
dB
10
Cob
c
ib
hfe
NF
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