lueti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MECHANICAL DATA
Dimensions in mm (inches)
„ 5.64 (0.230)^
4.95(0.195)
BC107
BC108
BC109
GENERAL PURPOSE
SMALL SIGNAL
NPN BIPOLAR TRANSISTOR
j U
048(0.019)
jj]
0.41 (0.018)
'
FEATURES
• SILICON NPN
• HERMETICALLY SEALED TO18
2.5410.100).
• SCREENING OPTIONS AVAILABLE
TO-18 METAL PACKAGE
Underside View
PIN 1 - Emitter
PIN 2 - Base
PIN 3 - Collector
ABSOLUTE MAXIMUM RATINGS
(T
A
-
25°C unless otherwise stated)
V
CBO
VCEO
V
CES
Collector-Base Continuous Voltage
BC017
50V
30V
45V
20V
50V
BC109
BC107
BC109
BC108, BC109
Collector - Emitter Continuous Voltage With Zero Base Current
BC107
BC108, BC109
Collector - Emitter Continuous Voltage With Base Shortcircuited to Emitter
BC107
BC108,
V
EBO
l
c
I
CM
P
tot
T
a
mb
T
stg
Emitter - Base Continuous Voltage Reverse Voltage
BC108,
Continuous Collector Current
Peak Collector Current
Power Dissipation @ T
amb
= 25°C
Ambient Operating Temperature Range
Storage Temperature Range
30V
6V
5V
100mA
200mA
SOOmW
-65to+175°C
-65to+175°C
NJ Semi-Conductors reserves the right to change test eonditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BC107
BC108
BC109
ELECTRICAL CHARACTERISTICS
(T
A
=
25°C unless otherwise stated)
Test Conditions
Min.
Parameter
'ceo(i)
lceo(i)
I
EBO
Collector-Base Leakage Current
Collector-Emitter Leakage Current
@Tamb=125°C
Emitter Cut-off Current
V
C B
=45V
V
CB
= 25V
V
C B
=45V
V
C B
=25V
V
E B
=4V
V
CE
= 5V
Group A
h
2
iE
Static Forward Current Transfer Ratio
Group B
Group C
BC107
BC108, BC109
BC107
BC108, BC109
l
c
= 0
l
c
= 2mA
BC107, BC108
All Types
BC108, BC109
BC107
BC108
BC109
V
BE
V
B
E(
Sa
t)(i)
\/CE(sat)(i)
f
T
Base - Emitter Breakdown
Base - Emitter Saturation Voltage
Collector - Emitter Saturation Voltage
Transition Frequency
V
CE
= 5V
I
B
= 0.5mA
I
B
= 0.5mA
V
CE
= 5V
f=100MH
z
VCE = 5V
F
Noise Factor
I
C
= 0.2mA
BC109
BC107, BC108
VCE - 5V l
c
= 2mA f -100kH
z
Group A
n
2ie
Typ.
Max.
Unit
15
15
4
4
1
nA
MA
MA
110
180
380
110
110
180
220
460
800
460
800
800
0.7
V
V
l
c
= 2mA
l
c
=10mA
l
c
=10mA
10= 10mA
150
!
0.83
0.25
V
MHz
R = 2kiJ f=1kH
z
AF=200H
Z
I
I
I
125
240
450
125
125
240
1.6
3.2
6.0
:
4
10
dB
BC107, BC108
All Types
BC108, BC109
BC107
BC108
BC109
260
500
Small Signal Forward Current Transfer Group B
Ratio
Group C
;
900
500
900
900
4.5
8.5
15
30
60
110
6
500
PF
kQ
V
CE
= 5Vl
c
= 2mAf=1kH
z
i
11e
Common Emitter Input Impedance
Group A
Group B
Group C
Group A
n
22e
BC107, BC108
All Types
BC108, BC109
BC107, BC108
All Types
BC108, BC109
f=1MH
z
V
C E
= 5 V l
c
= 2 m A f = 1kH
z
;
M
S
Common Emitter Output Admittance
Common Base Output Capacitance
Thermal Resistance: Junction to
Ambient
•
Group B
Group C
V
C B
=10V
C
2
2b
^th(j-amb)
°C/W
FPGA/CPLD
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