REVISIONS
LTR
A
B
C
D
E
F
G
H
DESCRIPTION
Add device type 02. Add appendix A for device type 02 only.
Make editorial changes throughout.
Make change to 1.4, 30.2.1, I
S(OFF)
overvoltage and I
D(OFF)
overvoltage
tests. - ro
Make change to boilerplate and add device class T for device type 02. - ro
Add level P to table I. Make change to 1.5 and glassivation as specified under
APPENDIX A. - ro
Make change to enable delay waveform as specified on figure 6. - ro
Make changes to supply voltage and V
REF
to GND limits as specified
under 1.3. Make clarification to paragraphs 4.4.4.2 and 4.4.4.3. - ro
Under 1.5, move footnote 3/ to the latch up parameter. Make correction to the
R
L
value under the t
ON(A)
, t
OFF(A)
test as specified in table I. - ro
Add a junction temperature limit to paragraph 1.3 and make clarifications to the
figure 3 logic diagram. - ro
Add device type 03. Add paragraphs 2.2, 6.7, and Table IB. Under Table IIB,
delete +I
S(OFF)
, -I
S(OFF)
, -I
D(OFF)
, +I
D(OFF)
, +I
D(ON)
, -I
D(ON)
parameters.
Under figure A-1, backside metallization, delete the word “none” and replace
with “silicon”. Update boilerplate paragraph to current MIL-PRF-38535
requirements. - ro
Add device types 04 and 05. Make changes to paragraphs 1.2.2, 1.3, 1.4, 1.5,
4.4.4.2, A.1.2.2, A.1.2.4, Table IA, Table IB, Table IIA, Table IIB, and figure 1.
Delete paragraph 4.4.4.2.1. - ro
Add case outline Z. Make change to paragraph 3.2.5. Delete figure 4 radiation
exposure circuit. Delete device class M requirements. - ro
Add device types 04 and 05 to Table IIB. Delete LDR, HDR, and EDLRS
references from paragraphs 1.2.2 and A.1.2.2. - ro
Add device type 05 to the Analog input overvoltage range (power on/off)
parameter as specified under paragraph 1.3. - ro
DATE (YR-MO-DA)
97-04-09
97-09-12
98-12-02
99-04-22
00-04-14
04-06-25
06-02-24
09-06-17
APPROVED
R. MONNIN
R. MONNIN
R. MONNIN
R. MONNIN
R. MONNIN
R. MONNIN
R. MONNIN
J. RODENBECK
J
11-01-26
C. SAFFLE
K
L
M
N
11-06-28
13-05-02
13-07-03
13-08-20
C. SAFFLE
C. SAFFLE
C. SAFFLE
C. SAFFLE
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
N
15
N
16
N
17
N
18
REV
SHEET
PREPARED BY
RAJESH PITHADIA
N
19
N
20
N
21
N
1
N
22
N
2
N
23
N
3
N
24
N
4
N
25
N
5
N
6
N
7
N
8
N
9
N
10
N
11
N
12
N
13
N
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
RAJESH PITHADIA
APPROVED BY
MICHAEL FRYE
DRAWING APPROVAL DATE
95-08-23
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
MICROCIRCUIT, DIGITAL-LINEAR, RADIATION
HARDENED, SINGLE 16-CHANNEL ANALOG
MUX / DEMUX WITH OVERVOLTAGE
PROTECTION, MONOLITHIC SILICON
SIZE
A
CAGE CODE
AMSC N/A
REVISION LEVEL
N
67268
SHEET
1 OF 25
5962-95630
DSCC FORM 2233
APR 97
5962-E545-13
1. SCOPE
1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device class Q), space
application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and
lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation
Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the
manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended
application.
1.2 PIN. The PIN is as shown in the following example:
5962
R
95630
01
V
X
C
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
Generic number
HS-1840RH
Circuit function
Radiation hardened dielectrically isolated (DI)
CMOS single 16-channel analog
MUX / DEMUX with high impedance analog input
overvoltage protection
Radiation hardened DI BiCMOS single 16-channel
analog MUX / DEMUX with high impedance
analog input overvoltage protection
Radiation hardened DI BiCMOS single 16-channel
analog MUX / DEMUX with high impedance
analog input overvoltage protection
Radiation hardened DI BiCMOS single 16-channel
analog MUX / DEMUX with high impedance
analog input overvoltage protection.
Radiation hardened DI BiCMOS single 16-channel
analog MUX / DEMUX with high impedance
analog input overvoltage protection.
02
HS-1840ARH
03
HS-1840BRH
04
HS-1840AEH
05
HS-1840BEH
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95630
SHEET
N
2
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Q, V
T
Device requirements documentation
Certification and qualification to MIL-PRF-38535
Certification and qualification to MIL-PRF-38535 with performance as specified
in the device manufacturers approved quality management plan.
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Y
Z
Descriptive designator
CDIP2-T28
CDFP3-F28
CDFP3-F28
Terminals
28
28
28
Package style
Dual-in-line
Flat pack
Flat pack with grounded lid
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V.
1.3 Absolute maximum ratings. 1/
Supply voltage between V+ and V- :
Device type 01 .........................................................................................
Device types 02, 03, 04, and 05 ..............................................................
Supply voltage between V+ and GND :
Device type 01 .........................................................................................
Device types 02, 03, 04, and 05 ..............................................................
Supply voltage between V- and GND :
Device type 01 .........................................................................................
Device types 02, 03, 04, and 05 ..............................................................
V
REF
to GND :
Device type 01 .........................................................................................
Device types 02, 03, 04, and 05 .............................................................
Digital input overvoltage range ....................................................................
Analog input overvoltage range (power on/off):
Device type 01 .........................................................................................
+40 V
+33 V
+20 V
+16.5 V
-20 V
-16.5 V
+20 V
+16.5 V
((GND) - 4 V)
≤
V
A
≤
((V
REF
) + 4 V)
-25 V
≤
V
S
≤
+25 V
Device types 02, 03, 04, and 05 .............................................................. -35 V
≤
V
S
≤
+35 V
Storage temperature range .......................................................................... -65°C to +150°C
Junction temperature (T
J
) ............................................................................ +175°C
Maximum package power dissipation (P
D
): 2/
Case X ...................................................................................................
Cases Y and Z .........................................................................................
Lead temperature (soldering, 10 seconds) ..................................................
Thermal resistance, junction-to-case (θ
JC
) ..................................................
1600 mW
1400 mW
+275°C
See MIL-STD-1835
Thermal resistance, junction-to-ambient (θ
JA
):
Case X ................................................................................................... 83.1°C/W
Cases Y and Z ......................................................................................... 49.1°C/W
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/
The derating factor for case X shall be 20.4 mW/°C, above T
A
= +95°C, and for cases Y and Z shall be 18.5 mW/°C
above T
A
= +95°C.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95630
SHEET
N
3
1.4 Recommended operating conditions.
Positive supply voltage (V+):
Device types 01, 02, and 04 ..................................................................................
Device types 03 and 05 .........................................................................................
Negative supply voltage (V-):
Device types 01, 02, and 04 ..................................................................................
Device types 03 and 05 .........................................................................................
V
REF
..........................................................................................................................
+15 V
+12 V
±10%
-15 V
-12 V
±10%
5 V dc
V
AH
............................................................................................................................ 4.0 V dc
V
AL
............................................................................................................................ 0.8 V dc
V
EN
............................................................................................................................ 0.8 V dc
Ambient operating temperature range (T
A
) ............................................................... -55°C to +125°C
1.5 Radiation features.
Maximum total dose available: high dose rate tests - dose rate = 50 – 300 rad(Si)/s
Device classes Q and V:
Device type 01 ...................................................................................................
Device types 02, 03, 04 and 05 ..........................................................................
Device class T:
Device type 02 ...................................................................................................
ELDRS test (Low dose rate < 10 mrad(Si)/s:
Device class V:
Device types 02 and 03 .........................................................................................
Device types 04 and 05 ..........................................................................................
Single event phenomena (SEP) :
No SEL occurs at effective linear energy threshold (LET):
Device type 01 ...................................................................................................
Device types 02, 03, 04, and 05 .........................................................................
Dose rate induced latch up:
Device type 01 .......................................................................................................
Device types 02, 03, 04, and 05 ............................................................................
Dose rate upset:
Device type 01 .......................................................................................................
Device types 02, 03, 04, and 05 ............................................................................
200 krads(Si)
300 krads(Si)
100 krads(Si)
Not production tested 3/
50 krads(Si) 3/ 4/
2
≤110
MeV/cm /mg 5/
Latch up free 5/
None 6/
Not tested
≥1
x 10 rads(Si)/s
Not tested
8
For device types 02, 03, 04 and 05, the manufacturer supplying RHA parts on this drawing has performed characterization
testing to a level of 150 krad(Si) that demonstrates the parts do not exhibit enhanced low dose rate sensitivity (ELDRS)
according to MIL-STD-883 method 1019 paragraph 3.13.1.1. Therefore, this part may be considered ELDRS free. Testing
beyond 150 krads(Si) was not performed.
______
3/ For device types 02, 03, 04 and 05, the manufacturer supplying RHA parts on this drawing has performed characterization
testing to a level of 150 krad(Si) at low and high dose rate in accordance with MIL-STD-883 method 1019 paragraph
3.13.1.1. Therefore, this part may be considered ELDRS free. Testing beyond 150 krads(Si) was not performed.
4/
Devices 04 and 05 are production lot acceptance tested on a wafer by wafer basis to 50 krads(Si) at low dose
rate (< 10 mrad(Si)/s).
Device type 01 uses dielectrically isolated (DI) / CMOS technology and latch-up is physically not possible.
Device types 02, 03, 04, and 05 use dielectrically isolated (DI) technology and latch-up is physically not possible.
Guaranteed by process design, but not tested, unless specified in table IA herein.
5/
6/
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95630
SHEET
N
4
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
http://quicksearch.dla.mil
or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
ASTM INTERNATIONAL (ASTM)
ASTM F1192
-
Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion
Irradiation of semiconductor Devices.
(Copies of these documents are available online at
http://www.astm.org
or from ASTM International, 100 Barr Harbor Drive,
P.O. Box C700, West Conshohocken, PA, 19428-2959).
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q, T and V.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Truth table. The truth table shall be as specified on figure 2.
3.2.4 Logic diagrams. The logic diagrams shall be as specified on figure 3.
3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95630
SHEET
N
5
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