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1N6630

产品描述1.8 A, SILICON, RECTIFIER DIODE
产品类别分立半导体    二极管   
文件大小108KB,共3页
制造商New Jersey Semiconductor
官网地址http://www.njsemi.com
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1N6630概述

1.8 A, SILICON, RECTIFIER DIODE

1N6630规格参数

参数名称属性值
厂商名称New Jersey Semiconductor
Reach Compliance Codeunknow

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-^e,mi-Conductoi tPioduati, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A
1IM6626 thru
1N6631
ULTRA FAST RECTIFIERS
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
.040 +/. .002
DIA. (1.02)
Features
AXIAL AND SURFACE MOUNT CONFIGURATIONS
HIGH VOLTAGE WITH ULTRA FAST RECOVERY TIME
VERY LOW SWITCHING LOSS AT HIGH TEMPERATURE
LOW CAPACITANCE
METALLURGICALLY BONDED
NON-CAVITY GLASS PACKAGE
SURFACE MOUNT DIODES THERMALLY MATCHED FOR
USE ON CERAMIC PRINTED WIRING BOARDS
Figure 1A
Package E
Axial
Maximum Ratings @
25°C
TYPE
NUMBER
1N6626andUS
1N6627andU5
1N6628ar>dUS
1N6629andUS
1N6630andU5
1N6631andUS
REVERSE
VOLTAGE
200
400
600
800
900
1000
OPERATING OPERATING
CURRENT
CURRENT
(Note 3)
(Note T)
4.0A
4.0A
4.0A
3.0A
3.0A
2.5A
2.0A
2.0A
2.0A
1.4A
1.4A
1.4A
PEAK FORWARD
SURGE CURRENT
L
R
»JL
= .375"
(Note 2)
75A
75A
75A
75A
75A
60A
"•frJEC
22'GW
22'OW
22'C/W
22'OW
22'e/W
22'C/W
10'OW
10'CW
10'C/W
10'OW
10'OW
10'OW
1N6626US thru
1N6631US
-JS
—-*-—)
ic
i
O —
.— D •*
Operating Temperature: -65'C to +175X.
Storage Temperature: -65'C to +200'C.
Note I: TL = +75'C, l=.375 inch for axial parts. Derate linearly at 1.0%/'C forTL> +75'C. For surface mount
devices, US suffix, these currents apply witn
a
maximum end cap temperature of 110'C Derate linearly at
1.b%/'C above 110'C.
Note 2: Test pulse = 8.3ms, half sine wave.
Note 3: Independent of heatsinking.
J
Inch
(
_J
WIN. MAX.
.205
.019
".003
.137
Ml
Electrical Characteristics @ 25°C
rvre
NUMBER
MINIMUM
BREAK-
DOWN
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
v, u IF
%
in . ',OUA
V
MAXIMUM D.C. MAXIMUM MAXIMUM
PEAK
FORWARD
REVERSE CURRENT REVERSE
JUNCTION RECOVERY RECOVERY
0 RATED
RECOVERY CAPACITANCE CURRENT VOLTAGE
REVERSE VOLTAGE
TIME
VFRM Max.
Cj
|RM<'«)
l
If.iA.
V
R
=10V
If =
0.5A
!R
ICKWlJi
tr =
12ns
Note 1
T
A
-25'C
TA-ISO'C
C*
I-*
ns
30
F
gure 16
P
ickage F
S
jrface
M
ount
A
B
C
D
Tot;
mm
WIN. MAX.
5010
6350
0483 0.71_V
"b.076
3.
1ftf)
3.759
VOA
1.35V
«1.2A
1.50V
V«A
W4.0A
P'
40
40
40
40
40
40
A
V
Mechanical
Characteristics
AXIAL LEADED DEVICES
CASE:
Voidiess Hermetically
Sealed Hard Glass.
LEAD MATERIAL:
Solder
Dipped Copper.
MARKING:
Body Painted, Alpha
Numeric.
POLARITY:
Cathode Band.
IN6626andUS
1N6627andUS
1N6628anduS
1N6629andUS
1N6630andUS
IN6631 and US
220
440
660
880
990
1100
1.3SV«1.2A 1.50VC4.0A
1.35V* 1.2A 1.50VO4.0A
2.0
2.0
2.0
20
2.0
4.0
500
500
500
SOO
500
600
30
30
50
SO
60
3.5
3.5
3.5
4.2
4.2
5.0
8
8
8
12
12
20
1. 40V « VOA
1.70V«3.0A
1.40V01.0A 1.70VS3.0A
1 60V01.0A 1.9SV«2.5A
NOTE 1 Reverse Recovery Time Test Conditions: Ip = 0.5A. lp|y = 1 .OA, IR(REQ
=
0-2SA,
4 AMP SERIES
3
•D
rD
S
o
//
1
>0'C H
^
it 'A
'
>
If
A
--55'
/
It
I? S'C
-?
7/ +
25 C
I//
1
?
C
0)
ERII
- 3 AMPS
,
2.5 AND
(f
r*
<p
A /,
Y
r
y
•p
ra
1 0
-
C
125'C
!/
^
f/ ' '/
'/•
I--55
c
y
L-
SURFACE MOUNT DEVICES
CASE:
Voidiess Hermetically
Sealed Hard Glass.
END CAP MATERIAL:
Solid
Silver.
END CAP CONFIGURATION:
Square.
POLARITY:
Cathode Dot on End
.2 .4 6 .8 1.01.2 1 4 1 . 6 1 . 8 2 0 2 2 2 4
Vp - Forward Voltage - (V)
FIGURE 2
Typical Forward Current
,2 .4 6 8 1.01.2141.61,82.02.22,4
VF - Forward Voltage - (V)
FIGURE 3
Typical Forward Current
17
/f/
1
^
25
-
vs
Forward Voltage
vs
Forward Voltage
Cap.
NI Semi-C i imJuulon r«»rv«!i the rlgM la dump (at candillom, pvramttir limiH ;«d pickup JlmcMinm wi«hwn notic*
liiibrmulkMi lumnh«J by Ml Svmi-C unJutCUrt il bdhvcd to rn huh ucvurMt ,im! rdiuhb n |h« iiin« uf guinf lt> press. However M
icini (. i iklinlnn bMiiiNs IHI rc^pi'iuibilily (i)f my ern<n i'f KiniuniiM JiwuvacU in ill tb« NI Stfiiu-X.^mhivhn
n-.ri ii-iT-i
I"
viiih 'hn l:il.-i-.KcM ire^iirrtitf h<frre|iltKiii*i'nS(n

1N6630相似产品对比

1N6630 1N6626 1N6626US 1N6627US 1N6628US 1N6629 1N6629US 1N6630US 1N6631 1N6631US
描述 1.8 A, SILICON, RECTIFIER DIODE 2.3 A, SILICON, RECTIFIER DIODE 2.3 A, SILICON, RECTIFIER DIODE 4 A, SILICON, RECTIFIER DIODE 4 A, SILICON, RECTIFIER DIODE 1.8 A, SILICON, RECTIFIER DIODE 2.8 A, SILICON, RECTIFIER DIODE 2.3 A, SILICON, RECTIFIER DIODE 1.8 A, SILICON, RECTIFIER DIODE 2.8 A, SILICON, RECTIFIER DIODE

 
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