电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N6039

产品描述1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
产品类别分立半导体    二极管   
文件大小156KB,共3页
制造商New Jersey Semiconductor
官网地址http://www.njsemi.com
下载文档 详细参数 全文预览

1N6039在线购买

供应商 器件名称 价格 最低购买 库存  
1N6039 - - 点击查看 点击购买

1N6039概述

1500 W, BIDIRECTIONAL, SILICON, TVS DIODE

1N6039规格参数

参数名称属性值
厂商名称New Jersey Semiconductor
Reach Compliance Codeunknow
Base Number Matches1

文档预览

下载PDF文档
^s.rni-Conduako't Lpioducti, {Jnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
FEATURES
• 1500 WATTS PEAK POWER DISSIPATION
• AVAILABLE IN STANDOFF VOLTAGES FROM 5.5V TO 185V
• 00-13 HERMETICALLY SEALED PACKAGE
• BIDIRECTIONAL
• UL RECOGNIZED (1N6070A)
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
1N6O36
thru
1N6072A
BIDIRECTIONAL
TRANSIENT
ABSORPTION ZENER
DESCRIPTION
These TAZ devices are a series of Bidirectional Silicon Transient Suppressors
used in AC applications where large voltage transients can permanently
damage voltage-sensitive components.
These devices are manufactured using two silicon PN, low voltage junction in a
back to back configuration. They are characterized by their high surge
capability, extremely fast response time, and low impedance, (R
on
).
TAZ has a peak pulse power rating of 1500 watts for one millisecond and there-
fore can be used in applications where induced lightning on rural or remote
transmission lines represents a hazard to electronic circuitry. The response
time of TAZ clamping action is less than (5x 10
M
) sec; therefore, they can protect
Integrated Circuits, MOS devices, Hybrids, and other voltage-sensitive semi-
conductors and components.
This series of devices has been proven very effective as EMP Suppressors.
MAXIMUM RATINGS
.235 _ MM.
547 DIA, |mm|
10 MAX.
DM.
IH
MAX. DIA (mm)
21 MAI.
5 33 MAX. (mm)
1500 watts of peak pulse power dissipation at 25° C
tclampin* (0 volts to V
(
BR> min): less than 5 x 10-
9
seconds
Operating and storage temperatures -65° C to + 175° C
Steady state power dissipation: 1.0 watts at T
L
= 25°C, 3/8" from body.
Repetition rate (duty cycle): .01%
ELECTRICAL CHARACTERISTICS
Clamping Factor: 1.33 @ full rated power
1.20 @ 50% rated power
Clamping Factor: The ratio of the actual Vrj (Clamping Voltage) to the
) (Breakdown Voltage) as measured on a specific
10,000
device.
1000
I
m
Q.
C
1,000
1000
8
100ns
%sec lOOysec ims
Ip — PulM Tim*
MECHANICAL
CHARACTERISTICS
Standard DO-13 package, glass and
metal hermetically sealed
WEIGHT: 1.5 grams (approximate)
F I N I S H : All external surfaces are
corrosion resistant and leads
solderahle.
POLARITY: Bidirectional not
marked,
1000
idms 100ms
6
BV: Breakdown Voltage in Volts
MOUNTING POSITION: Any.
FIGURE 1
FIGURE 2 TYPICAL CAPACITANCE vs. BREAKDOWN VOLTAGE
N.I .Semi-t urn/utters reserves the right In change tell conditions, parameter limits and packuge dimensions without notice
Information fiinrnhed by Nl Scmr-C undutlors it believed to he both accurate and reliable .it the lime of going to press. However \
Semi C oiiJutltiri .IJMIIIICS no revpoiisibilify fur ;m> erfitM IT I'lnivsinns Jisuuvvred in it* use M Stini<imliKli rs criwur:l!je:i
关于LVTTL3.3V 和LVCMOS3.3V
在FPGA/CPLD中有两种电平,LVTTL3.3V和LVCMOS3.3V,不知道这两种具体的区别在哪里? 从输出地高低电平来看,他们又能互相驱动 望高手指教!...
771235870 FPGA/CPLD
浮点至定点变换的C程序举例
们通过一个例子来说明C程序从浮点变换至定点的方法。这是一个对语音信号(0.3~3.4kHz)进行低通滤波的C语言程序,低通滤波的截止频率为800Hz,滤波器采用19点的有限冲击响应FIR滤波。语音信号的采 ......
Jacktang DSP 与 ARM 处理器
C6678多核DSP开发——vlib应用之连通域标记
对于边缘检测是特征识别的准备工作,其实典型的图像处理过程在边缘检测之前要进行连通域标记,得出图像上的某副图形,然后检测其边缘,得到边缘轮廓点集,然后根据模板进行匹配识别。连通域标 ......
fish001 DSP 与 ARM 处理器
关于F28035 ADC问题。
就TI的SPRZ295J文档(TMS320F2803x Piccolo MCU Silicon Errata)有以下几个问题: 1、假如有SOC0~3配置成“同时采样”,即SOC0、SOC1为一对,SOC2、SOC3为一对,这两次同时采样能不能用一个 ......
dontium 微控制器 MCU
TMS320F28335系统设计 设计中应注意以下事项
设计中应注意以下事项: (1)时钟电路采用内部晶体振荡器,在电路配置时应尽量靠近TMS320F28335放置,引线要短且粗,电容要稳定,容值准确,应远离发热元件。 (2)电源模块输出端使用保 ......
灞波儿奔 微控制器 MCU
我有自己写的程序,编译时总是报错,程序挺长的__
#include #define uchar unsigned char #define uint unsigned int //===================================== sbit RS=P1^4; sbit RW=P1^5; sbit DE=P1^6; sbit PSB=P1^7; uchar keyval ......
guangod 51单片机

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1375  1209  144  2551  596  15  43  1  16  59 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved