Philips Semiconductors
Product specification
Thyristor
logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristor in a plastic envelope, suitable
for surface mounting, intended for use
in general purpose switching and
phase control applications. This
device is intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
BT169W Series
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT169
Repetitive peak
off-state voltages
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current
MAX. MAX. MAX. MAX. UNIT
BW
200
0.5
0.8
8
DW
400
0.5
0.8
8
EW
500
0.5
0.8
8
GW
600
0.5
0.8
8
V
A
A
A
PINNING - SOT223
PIN
1
2
3
tab
DESCRIPTION
cathode
anode
gate
anode
PIN CONFIGURATION
4
SYMBOL
a
k
1
2
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave;
T
sp
≤
112 ˚C
all conduction angles
half sine wave;
T
j
= 25 ˚C prior to surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 2 A; I
G
= 10 mA;
dI
G
/dt = 100 mA/µs
-
-
-
-
-
-
-
-
-
-
-
-40
-
B
200
1
MAX.
D
400
1
E
500
1
G
600
1
UNIT
V
A
A
A
A
A
2
s
A/µs
A
V
V
W
W
˚C
˚C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
0.63
1
8
9
0.32
50
1
5
5
2
0.1
150
125
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Thyristor
logic level
THERMAL RESISTANCES
SYMBOL
R
th j-sp
R
th j-a
PARAMETER
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
CONDITIONS
MIN.
-
pcb mounted, minimum footprint
pcb mounted; pad area as in fig:14
-
-
BT169W Series
TYP.
-
156
70
MAX.
15
-
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
I
L
I
H
V
T
V
GT
I
D
, I
R
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
CONDITIONS
V
D
= 12 V; I
T
= 10 mA; gate open circuit
V
D
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 kΩ
V
D
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 kΩ
I
T
= 2 A
V
D
= 12 V; I
T
= 10 mA; gate open circuit
V
D
= V
DRM(max)
; I
T
= 10 mA; T
j
= 125 ˚C;
gate open circuit
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 ˚C;
R
GK
= 1 kΩ
MIN.
-
-
-
-
-
0.2
-
TYP.
50
2
2
1.35
0.5
0.3
0.05
MAX.
200
6
5
1.5
0.8
-
0.1
UNIT
µA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
t
gt
t
q
PARAMETER
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
CONDITIONS
V
DM
=67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; R
GK
= 1k
Ω
I
TM
= 2 A; V
D
= V
DRM(max)
; I
G
= 10 mA;
dI
G
/dt = 0.1 A/µs
V
D
= 67% V
DRM(max)
; T
j
= 125 ˚C;
I
TM
= 1.6 A; V
R
= 35 V; dI
TM
/dt = 30 A/µs;
dV
D
/dt = 2 V/µs; R
GK
= 1 kΩ
MIN.
-
-
-
TYP.
25
2
100
MAX.
-
-
-
UNIT
V/µs
µs
µs
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Thyristor
logic level
BT169W Series
1
Ptot / W
conduction form
angle
factor
degrees
a
30
4
60
2.8
90
2.2
120
1.9
180
1.57
BT169W
Tsp(max) / C
a = 1.57
1.9
2.2
110
10
ITSM / A
BT169
IT
I TSM
0.8
113
8
2.8
4
116
6
time
T
Tj initial = 25 C max
0.6
0.4
119
4
0.2
122
2
0
0
0.1
0.2
0.3
0.4
IF(AV) / A
0.5
0.6
125
0.7
0
1
10
100
Number of half cycles at 50Hz
1000
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where a = form
factor = I
T(RMS)
/ I
T(AV)
.
ITSM / A
BT169
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
1000
2
IT(RMS) / A
BT134W
1.5
100
1
10
IT
T
I TSM
time
0.5
Tj initial = 25 C max
1
10us
100us
T/s
1ms
10ms
0
0.01
0.1
1
10
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
10ms.
BT134W
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
sp
≤
112˚C.
VGT(Tj)
VGT(25 C)
1.2
1
0.8
0.6
0.4
0.2
IT(RMS) / A
1.6
112 C
BT151
1.4
1.2
1
0.8
0.6
0
50
Tsp / C
100
150
0
-50
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus solder point temperature T
sp
.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Thyristor
logic level
BT169W Series
3
2.5
2
1.5
IGT(Tj)
IGT(25 C)
BT169
5
IT / A
Tj = 125 C
Tj = 25 C
BT169W
4
Vo = 1.0 V
Rs = 0.27 Ohms
3
typ
max
2
1
1
0.5
0
-50
0
0
0.5
1
VT / V
1.5
2
2.5
0
50
Tj / C
100
150
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3
2.5
2
1.5
1
0.5
BT169
100
Zth j-sp (K/W)
BT169W
10
1
P
D
tp
0.1
t
0
-50
0
50
Tj / C
100
150
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
, R
GK
= 1 k
Ω
.
IH(Tj)
IH(25 C)
Fig.11. Transient thermal impedance Z
th j-sp
, versus
pulse width t
p
.
dVD/dt (V/us)
3
2.5
BT169
1000
100
2
1.5
1
0.5
0
-50
1
10
RGK = 1 kohms
0
50
Tj / C
100
150
0
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
,
R
GK
= 1 k
Ω
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Thyristor
logic level
MOUNTING INSTRUCTIONS
BT169W Series
Dimensions in mm.
3.8
min
1.5
min
2.3
1.5
min
(3x)
6.3
1.5
min
4.6
Fig.13. soldering pattern for surface mounting SOT223.
PRINTED CIRCUIT BOARD
Dimensions in mm.
36
18
60
9
4.6
4.5
10
7
15
50
Fig.14. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35
µ
m thick).
September 1997
5
Rev 1.200
嵌入式系统
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